MRF7S21210HR5 - 63W RF Power LDMOS 2.17GHz | NXP Semiconductors
部品番号: MRF7S21210HR5 ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $88.5 | $885.00 |
| 100 | $81.2 | $8,120.00 |
| 500 | $74.9 | $37,450.00 |
| 1,000 | $68.75 | $68,750.00 |
MRF7S21210HR5 概要
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power transistor that combines high RF output power, high gain, and high efficiency into a single robust die. It belongs to the broader power-MOSFET family and is widely used as the final-stage active device in base-station power amplifiers, where it converts DC supply power into amplified RF energy. The MRF7S21210HR5 specifically targets the 2.1 GHz LTE/UMTS band with ceramic packaging engineered for superior thermal performance under continuous RF drive.
Key features include a 65 V drain-source breakdown rating providing wide RF over-voltage margin, an output power of 63 W (CW or pulsed) at 2.17 GHz with 18.5 dB gain, and rugged construction rated for mismatch tolerance. The 28 V typical operating bias matches standard base-station DC infrastructure, and the integrated ESD protection simplifies factory handling.
The MRF7S21210HR5 uses NXP's HV7 LDMOS process technology, which delivers high drain efficiency (typically 45-55% in Doherty configurations) by minimizing on-resistance and parasitic capacitances. The die is internally matched for 50 ohm operation at 2.17 GHz, simplifying external matching networks and accelerating time-to-market for amplifier designers targeting the LTE/UMTS downlink spectrum.
Typical applications include LTE, WCDMA, and UMTS base-station power amplifiers, repeaters, and small-cell infrastructure; tactical and aerospace RF links operating in the 2.1 GHz band; and laboratory-grade RF power test equipment requiring broadband CW/pulsed amplification. Designers pair this transistor with NXP's driver-stage LDMOS parts and 3G/4G Doherty reference designs.
When designing with this device, follow NXP's application-note thermal mounting guidelines - the NI-780H-2L package requires a bolted heatsink with thermal compound and a solid copper-clad PCB or copper-molybdenum carrier to maintain junction temperature below 200 °C. Exceeding the absolute maximum drain voltage (65 V) under load-mismatch conditions will degrade device reliability.
This page synthesizes NXP datasheet specifications, distributor pricing tiers, and applied design guidance - engineering context not consolidated on any single distributor page.
ドロップイン代替品: MRF7S21210HR5 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MRF7S21210HSR5
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF7S21180HR5
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF8S21210HR5
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF8S21180HR5
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF7S19120HR5
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF7S21210HR5 最大定格＆電気的特性
| トランジスタタイプ | RF Power LDMOS, N-Channel |
| Frequency | 2.17 GHz (2110-2170 MHz band) |
| Output Power | 63 W (CW / pulsed) |
| Power Gain | 18.5 dB |
| Test Voltage | 28 V |
| Test Current | 1.4 A |
| Drain-Source Voltage (Rated) | 65 V |
| パッケージ / ケース | NI-780H-2L (ceramic, bolt-down) |
| Series | HV7 / MRF7S |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Polarity | N-Channel |
| 実装タイプ | Chassis / Bolt-Down (with heatsink) |
| Part Status | Obsolete |
MRF7S21210HR5 ni-780h-2l (ceramic, bolt-down) ピン配置ガイド
MRF7S21210HR5 (ni-780h-2l (ceramic, bolt-down) パッケージ) のピン配置。 このパワーデバイスは、ゲート、ドレイン、ソース端子を備えています。非極性パッケージの場合、正確なピン1の向きとフットプリントの詳細については、メーカーのデータシートを参照してください。主な用途には、電源設計、モータ駆動、負荷スイッチングがあります。
詳細なピン配置データはありません: MRF7S21210HR5.
詳細は データシート をご参照ください。
RF 安全動作領域 (MRF7S21210HR5)
主な用途
MRF7S21210HR5 の用途: 6 件s: LTE Base-Station Power Amplifier (2.1 GHz), WCDMA / UMTS Macro-Cell Doherty PA, RF Repeater and Small-Cell Power Amplifier, Tactical / Aerospace RF Link Amplifier, Test & Measurement RF Power Stage, Industrial 2.1 GHz ISM Band Power Amplifier.
LTE Base-Station Power Amplifier (2.1 GHz)
The MRF7S21210HR5's 63 W CW/pulsed output and 18.5 dB gain at 2.17 GHz make it a strong choice for the final stage of LTE base-station power amplifiers in the 2110-2170 MHz downlink band. The 28 V bias is standard base-station infrastructure, while the LDMOS technology enables Doherty architectures with 45-55% drain efficiency, critical for reducing operating expense and thermal load in macro-cell sites. Compared to GaN, the MRF7S21210HR5 has lower cost per watt and simpler negative-voltage-free gate biasing, an advantage for high-volume LTE deployments in the 2.1 GHz spectrum.
おすすめ
WCDMA / UMTS Macro-Cell Doherty PA
In WCDMA and UMTS macro-cell deployments, the MRF7S21210HR5 serves as the carrier-amplifier device in a two-way Doherty configuration covering the 2110-2170 MHz band. Its 18.5 dB gain reduces driver-stage gain requirements, while 65 V drain breakdown provides ample load-mismatch headroom necessary for hot-swappable antenna interfaces. The NI-780H-2L ceramic package delivers low thermal resistance (approximately 0.4-0.6 °C/W junction-to-case), enabling continuous CW operation under heavy traffic load. Compared to older-generation bipolar RF transistors, this LDMOS part provides 5-10 dB higher gain and substantially better linearity for 3G signals.
おすすめ
RF Repeater and Small-Cell Power Amplifier
The MRF7S21210HR5 suits RF repeaters and small-cell power amplifiers operating in the 2.1 GHz band, where compact size, moderate output power (63 W), and chassis-mount thermal performance are required. The bolt-down NI-780H-2L package integrates cleanly into repeater enclosures without requiring exotic board-level thermal management. The 28 V bias simplifies shared-rail power-supply design between small-cell SoCs and the RF final stage. Compared to lower-power surface-mount RF MOSFETs, this part provides headroom for operators needing temporary higher-power coverage during events before tapering back to small-cell nominal output.
おすすめ
Tactical / Aerospace RF Link Amplifier
In tactical and aerospace RF communication links operating at 2.1-2.2 GHz (including certain military satellite and UAV command uplinks), the MRF7S21210HR5 provides 63 W of CW output power from a rugged ceramic NI-780H-2L package rated for harsh environments. Its 65 V Vds rating protects against load-pull transients caused by antenna VSWR variations on moving platforms. The mature NXP MRF7S series is well-characterized over temperature and offers established reliability data for aerospace qualification. Compared to surface-mount GaN parts, the bolt-down NI-780H package supports field-replaceable module-level repairs in deployed systems.
おすすめ
Test & Measurement RF Power Stage
The MRF7S21210HR5 functions well as the final stage in laboratory-grade CW and pulsed RF power amplifiers and test instruments used to characterize 2.1 GHz components. The 63 W saturated output covers most production-line wireless-device radiated-power test requirements, while the 18.5 dB gain lets engineers build 1 W in / 60+ W out amplifier chains with minimal stages. The 28 V bias matches conventional benchtop DC supplies, and the NI-780H-2L bolt-down package provides low thermal resistance for continuous CW operation. Compared to obsolete bipolar test amplifiers, the LDMOS part provides 10+ dB higher gain and far better unit-to-unit repeatability.
おすすめ
Industrial 2.1 GHz ISM Band Power Amplifier
Although primarily targeted at licensed cellular bands, the MRF7S21210HR5 can be repurposed for high-power industrial / scientific / medical (ISM) band transmitters operating near 2.1 GHz where regional regulators permit. The 63 W CW output supports long-range telemetry, industrial heating, and specialized sensor excitation systems. Its 28 V bias and NI-780H-2L chassis-mount package suit rugged industrial enclosures requiring field serviceability. Compared to consumer-grade Wi-Fi 2.4 GHz PAs, this part offers 10-20 dB higher output power and proper harmonic suppression for regulatory compliance in industrial deployments, albeit with a narrower bandwidth optimized for the 2.1 GHz band.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF7S21210HR5 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF7S21210HSR5 | MRF7S21180HR5 | MRF8S21210HR5 | MRF8S21180HR5 | MRF7S19120HR5 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L | NI-780H-2L (flanged lead-form) | NI-780H-2L | NI-780H-2L | NI-780H-2L | NI-780H-2L |
| Frequency | 2.17 GHz | 2.17 GHz (identical) | 2.12 GHz | 2.11 GHz | 1.80 GHz | 1.99 GHz |
| Output Power | 63 W | 63 W (identical) | 50 W (-21%) | 63 W (identical) | 50 W (-21%) | 36 W (-43%) |
| Power Gain | 18.5 dB | 18.5 dB (identical) | 18.0 dB | 19.5 dB (+1 dB) | 19.0 dB | 17.5 dB |
| Test Voltage | 28 V | 28 V (identical) | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Voltage (Rated) | 65 V | 65 V (identical) | 65 V | 65 V | 65 V | 65 V |
| Series / Generation | MRF7S (HV7 LDMOS) | MRF7S (HV7 LDMOS) | MRF7S (HV7 LDMOS) | MRF8 (HV8 LDMOS, next gen) | MRF8 (HV8 LDMOS, next gen) | MRF7S (HV7 LDMOS) |
主な差別化要因
- Higher gain than lower-power MRF7S siblings （vs MRF7S21180HR5)
- Improved gain over next-gen MRF8 at cost of availability （vs MRF8S21210HR5)
- Higher 2.17 GHz band tuning margin vs 1.99 GHz parts （vs MRF7S19120HR5)
- Mature NXP MRF7S reliability database （vs MRF8S21210HR5)
設計ノート
The NI-780H-2L ceramic package requires a bolted heatsink with high-quality thermal compound (e.g., Dow Corning SC-340 or equivalent) and a flatness tolerance better than 0.025 mm across the mounting surface. Junction-to-case thermal resistance is approximately 0.4-0.6 °C/W per NXP's datasheet; at 63 W RF output with 50% drain efficiency, the die dissipates ~30-40 W and the heatsink must keep Tj below 200 °C. For pulsed operation, transient thermal impedance follows the published ZθJC(t) curves in the datasheet. Estimated: at 28 V × 1.4 A quiescent bias plus 50% efficiency at 63 W Pout, PDC_in ≈ 28 × 1.4 + 63/0.5 ≈ 165 W, leaving Pdissip ≈ 78 W which mandates a forced-air or liquid-cooled cold plate for continuous CW operation.
PCB-side matching-network microstrip traces should be designed on low-loss RF substrate (Rogers RO4350B or RO4003C recommended) with controlled 50 Ω impedance at 2.17 GHz. Keep gate and drain traces short, use extensive ground via fencing along both sides of each microstrip, and isolate input from output with a via wall or shield. Decouple the 28 V supply rail close to the drain feed with at least 10 µF tantalum plus 100 nF and 10 nF ceramic bypass capacitors to suppress low-frequency and VHF instability. NXP's reference design AN1234 for the MRF7S family provides a complete layout template.
Three pitfalls to avoid: (1) Exceeding the 65 V drain-source rating under load-mismatch conditions - include a drain-voltage clamp or over-voltage protection circuit if the antenna can be disconnected during operation; (2) Operating without proper DC gate-bias sequencing - the device must see Vgs bias applied before Vds ramps up, otherwise the device can enter uncontrolled conduction; (3) Designing for absolute maximum ratings rather than derated 'typical' operating points - run the part at ~80% of maximum ratings for reliable MTBF. Always verify with the manufacturer's application note AN1234 before finalizing the schematic.
When driven from a 28 V nominal supply, the MRF7S21210HR5 draws approximately 2.5-2.8 A under saturated 63 W RF output conditions (estimated: Pdc_in ≈ 130-150 W for Class-AB at 50% efficiency). Use a low-inductance power-supply loop with bulk capacitance within 50 mm of the drain feed pin to minimize parasitic ringing that can trigger parametric oscillation. A 10 µF aluminum-polymer or tantalum bulk cap plus 100 nF X7R ceramic is the minimum recommended supply decoupling. Avoid running the device below 27 V or above 29 V on the drain rail - both reduce efficiency and reliability.
コンプライアンス情報
RoHS/REACH/lead-free status not explicitly provided in the verified web data; engineer must request latest material declaration from NXP or franchised distributor. AEC-Q100 is not applicable (this is an RF power transistor, not an automotive-qualified IC). The original 2011 datasheet publication date predates many RoHS-phased RF ceramic-packaged parts; full material declaration should be obtained before new-design adoption.
