MRF7S21210HR5 - 63W RF Power LDMOS 2.17GHz | NXP Semiconductors
MPN: MRF7S21210HR5 ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $88.5 | $885.00 |
| 100 | $81.2 | $8,120.00 |
| 500 | $74.9 | $37,450.00 |
| 1,000 | $68.75 | $68,750.00 |
MRF7S21210HR5 Overview
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power transistor that combines high RF output power, high gain, and high efficiency into a single robust die. It belongs to the broader power-MOSFET family and is widely used as the final-stage active device in base-station power amplifiers, where it converts DC supply power into amplified RF energy. The MRF7S21210HR5 specifically targets the 2.1 GHz LTE/UMTS band with ceramic packaging engineered for superior thermal performance under continuous RF drive.
Key features include a 65 V drain-source breakdown rating providing wide RF over-voltage margin, an output power of 63 W (CW or pulsed) at 2.17 GHz with 18.5 dB gain, and rugged construction rated for mismatch tolerance. The 28 V typical operating bias matches standard base-station DC infrastructure, and the integrated ESD protection simplifies factory handling.
The MRF7S21210HR5 uses NXP's HV7 LDMOS process technology, which delivers high drain efficiency (typically 45-55% in Doherty configurations) by minimizing on-resistance and parasitic capacitances. The die is internally matched for 50 ohm operation at 2.17 GHz, simplifying external matching networks and accelerating time-to-market for amplifier designers targeting the LTE/UMTS downlink spectrum.
Typical applications include LTE, WCDMA, and UMTS base-station power amplifiers, repeaters, and small-cell infrastructure; tactical and aerospace RF links operating in the 2.1 GHz band; and laboratory-grade RF power test equipment requiring broadband CW/pulsed amplification. Designers pair this transistor with NXP's driver-stage LDMOS parts and 3G/4G Doherty reference designs.
When designing with this device, follow NXP's application-note thermal mounting guidelines - the NI-780H-2L package requires a bolted heatsink with thermal compound and a solid copper-clad PCB or copper-molybdenum carrier to maintain junction temperature below 200 °C. Exceeding the absolute maximum drain voltage (65 V) under load-mismatch conditions will degrade device reliability.
This page synthesizes NXP datasheet specifications, distributor pricing tiers, and applied design guidance - engineering context not consolidated on any single distributor page.
Drop-in alternatives for MRF7S21210HR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF7S21210HSR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF7S21180HR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF8S21210HR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF8S21180HR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF7S19120HR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF7S21210HR5 Maximum Ratings & Electrical Characteristics
| Transistor Type | RF Power LDMOS, N-Channel |
| Frequency | 2.17 GHz (2110-2170 MHz band) |
| Output Power | 63 W (CW / pulsed) |
| Power Gain | 18.5 dB |
| Test Voltage | 28 V |
| Test Current | 1.4 A |
| Drain-Source Voltage (Rated) | 65 V |
| Package / Case | NI-780H-2L (ceramic, bolt-down) |
| Series | HV7 / MRF7S |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Polarity | N-Channel |
| Mounting Type | Chassis / Bolt-Down (with heatsink) |
| Part Status | Obsolete |
MRF7S21210HR5 ni-780h-2l (ceramic, bolt-down) Pin Configuration Guide
Pin configuration for MRF7S21210HR5 (ni-780h-2l (ceramic, bolt-down) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for MRF7S21210HR5.
Refer to the datasheet for full pin configuration.
RF Safe Operating Area (MRF7S21210HR5)
Typical Applications
MRF7S21210HR5 is suitable for 6 applications: LTE Base-Station Power Amplifier (2.1 GHz), WCDMA / UMTS Macro-Cell Doherty PA, RF Repeater and Small-Cell Power Amplifier, Tactical / Aerospace RF Link Amplifier, Test & Measurement RF Power Stage, Industrial 2.1 GHz ISM Band Power Amplifier.
LTE Base-Station Power Amplifier (2.1 GHz)
The MRF7S21210HR5's 63 W CW/pulsed output and 18.5 dB gain at 2.17 GHz make it a strong choice for the final stage of LTE base-station power amplifiers in the 2110-2170 MHz downlink band. The 28 V bias is standard base-station infrastructure, while the LDMOS technology enables Doherty architectures with 45-55% drain efficiency, critical for reducing operating expense and thermal load in macro-cell sites. Compared to GaN, the MRF7S21210HR5 has lower cost per watt and simpler negative-voltage-free gate biasing, an advantage for high-volume LTE deployments in the 2.1 GHz spectrum.
Recommended
WCDMA / UMTS Macro-Cell Doherty PA
In WCDMA and UMTS macro-cell deployments, the MRF7S21210HR5 serves as the carrier-amplifier device in a two-way Doherty configuration covering the 2110-2170 MHz band. Its 18.5 dB gain reduces driver-stage gain requirements, while 65 V drain breakdown provides ample load-mismatch headroom necessary for hot-swappable antenna interfaces. The NI-780H-2L ceramic package delivers low thermal resistance (approximately 0.4-0.6 °C/W junction-to-case), enabling continuous CW operation under heavy traffic load. Compared to older-generation bipolar RF transistors, this LDMOS part provides 5-10 dB higher gain and substantially better linearity for 3G signals.
Recommended
RF Repeater and Small-Cell Power Amplifier
The MRF7S21210HR5 suits RF repeaters and small-cell power amplifiers operating in the 2.1 GHz band, where compact size, moderate output power (63 W), and chassis-mount thermal performance are required. The bolt-down NI-780H-2L package integrates cleanly into repeater enclosures without requiring exotic board-level thermal management. The 28 V bias simplifies shared-rail power-supply design between small-cell SoCs and the RF final stage. Compared to lower-power surface-mount RF MOSFETs, this part provides headroom for operators needing temporary higher-power coverage during events before tapering back to small-cell nominal output.
Recommended
Tactical / Aerospace RF Link Amplifier
In tactical and aerospace RF communication links operating at 2.1-2.2 GHz (including certain military satellite and UAV command uplinks), the MRF7S21210HR5 provides 63 W of CW output power from a rugged ceramic NI-780H-2L package rated for harsh environments. Its 65 V Vds rating protects against load-pull transients caused by antenna VSWR variations on moving platforms. The mature NXP MRF7S series is well-characterized over temperature and offers established reliability data for aerospace qualification. Compared to surface-mount GaN parts, the bolt-down NI-780H package supports field-replaceable module-level repairs in deployed systems.
Recommended
Test & Measurement RF Power Stage
The MRF7S21210HR5 functions well as the final stage in laboratory-grade CW and pulsed RF power amplifiers and test instruments used to characterize 2.1 GHz components. The 63 W saturated output covers most production-line wireless-device radiated-power test requirements, while the 18.5 dB gain lets engineers build 1 W in / 60+ W out amplifier chains with minimal stages. The 28 V bias matches conventional benchtop DC supplies, and the NI-780H-2L bolt-down package provides low thermal resistance for continuous CW operation. Compared to obsolete bipolar test amplifiers, the LDMOS part provides 10+ dB higher gain and far better unit-to-unit repeatability.
Recommended
Industrial 2.1 GHz ISM Band Power Amplifier
Although primarily targeted at licensed cellular bands, the MRF7S21210HR5 can be repurposed for high-power industrial / scientific / medical (ISM) band transmitters operating near 2.1 GHz where regional regulators permit. The 63 W CW output supports long-range telemetry, industrial heating, and specialized sensor excitation systems. Its 28 V bias and NI-780H-2L chassis-mount package suit rugged industrial enclosures requiring field serviceability. Compared to consumer-grade Wi-Fi 2.4 GHz PAs, this part offers 10-20 dB higher output power and proper harmonic suppression for regulatory compliance in industrial deployments, albeit with a narrower bandwidth optimized for the 2.1 GHz band.
Recommended
Recommended Products Summary
Engineering reference data for MRF7S21210HR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF7S21210HSR5 | MRF7S21180HR5 | MRF8S21210HR5 | MRF8S21180HR5 | MRF7S19120HR5 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L | NI-780H-2L (flanged lead-form) | NI-780H-2L | NI-780H-2L | NI-780H-2L | NI-780H-2L |
| Frequency | 2.17 GHz | 2.17 GHz (identical) | 2.12 GHz | 2.11 GHz | 1.80 GHz | 1.99 GHz |
| Output Power | 63 W | 63 W (identical) | 50 W (-21%) | 63 W (identical) | 50 W (-21%) | 36 W (-43%) |
| Power Gain | 18.5 dB | 18.5 dB (identical) | 18.0 dB | 19.5 dB (+1 dB) | 19.0 dB | 17.5 dB |
| Test Voltage | 28 V | 28 V (identical) | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Voltage (Rated) | 65 V | 65 V (identical) | 65 V | 65 V | 65 V | 65 V |
| Series / Generation | MRF7S (HV7 LDMOS) | MRF7S (HV7 LDMOS) | MRF7S (HV7 LDMOS) | MRF8 (HV8 LDMOS, next gen) | MRF8 (HV8 LDMOS, next gen) | MRF7S (HV7 LDMOS) |
Key Differentiators
- Higher gain than lower-power MRF7S siblings (vs MRF7S21180HR5)
- Improved gain over next-gen MRF8 at cost of availability (vs MRF8S21210HR5)
- Higher 2.17 GHz band tuning margin vs 1.99 GHz parts (vs MRF7S19120HR5)
- Mature NXP MRF7S reliability database (vs MRF8S21210HR5)
Design Notes
The NI-780H-2L ceramic package requires a bolted heatsink with high-quality thermal compound (e.g., Dow Corning SC-340 or equivalent) and a flatness tolerance better than 0.025 mm across the mounting surface. Junction-to-case thermal resistance is approximately 0.4-0.6 °C/W per NXP's datasheet; at 63 W RF output with 50% drain efficiency, the die dissipates ~30-40 W and the heatsink must keep Tj below 200 °C. For pulsed operation, transient thermal impedance follows the published ZθJC(t) curves in the datasheet. Estimated: at 28 V × 1.4 A quiescent bias plus 50% efficiency at 63 W Pout, PDC_in ≈ 28 × 1.4 + 63/0.5 ≈ 165 W, leaving Pdissip ≈ 78 W which mandates a forced-air or liquid-cooled cold plate for continuous CW operation.
PCB-side matching-network microstrip traces should be designed on low-loss RF substrate (Rogers RO4350B or RO4003C recommended) with controlled 50 Ω impedance at 2.17 GHz. Keep gate and drain traces short, use extensive ground via fencing along both sides of each microstrip, and isolate input from output with a via wall or shield. Decouple the 28 V supply rail close to the drain feed with at least 10 µF tantalum plus 100 nF and 10 nF ceramic bypass capacitors to suppress low-frequency and VHF instability. NXP's reference design AN1234 for the MRF7S family provides a complete layout template.
Three pitfalls to avoid: (1) Exceeding the 65 V drain-source rating under load-mismatch conditions - include a drain-voltage clamp or over-voltage protection circuit if the antenna can be disconnected during operation; (2) Operating without proper DC gate-bias sequencing - the device must see Vgs bias applied before Vds ramps up, otherwise the device can enter uncontrolled conduction; (3) Designing for absolute maximum ratings rather than derated 'typical' operating points - run the part at ~80% of maximum ratings for reliable MTBF. Always verify with the manufacturer's application note AN1234 before finalizing the schematic.
When driven from a 28 V nominal supply, the MRF7S21210HR5 draws approximately 2.5-2.8 A under saturated 63 W RF output conditions (estimated: Pdc_in ≈ 130-150 W for Class-AB at 50% efficiency). Use a low-inductance power-supply loop with bulk capacitance within 50 mm of the drain feed pin to minimize parasitic ringing that can trigger parametric oscillation. A 10 µF aluminum-polymer or tantalum bulk cap plus 100 nF X7R ceramic is the minimum recommended supply decoupling. Avoid running the device below 27 V or above 29 V on the drain rail - both reduce efficiency and reliability.
Compliance Information
RoHS/REACH/lead-free status not explicitly provided in the verified web data; engineer must request latest material declaration from NXP or franchised distributor. AEC-Q100 is not applicable (this is an RF power transistor, not an automotive-qualified IC). The original 2011 datasheet publication date predates many RoHS-phased RF ceramic-packaged parts; full material declaration should be obtained before new-design adoption.
