MRFS35015HSR5 - RF Power MOSFET N-Channel | NXP Semiconductors
部品番号: MRFS35015HSR5 ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
MRFS35015HSR5 概要
An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized for linear or pulsed RF amplification at high frequencies and high drain voltages, rather than for low-frequency switching. RF power MOSFETs sit within the wider taxonomy of power transistors (MOSFET, LDMOS, GaN HEMT, BJT), and LDMOS in particular dominates modern cellular broadcast and ISM infrastructure where high gain, high efficiency, and good thermal performance are required. The MRFS35015HSR5 falls into the air-cooled RF power transistor category historically produced by Freescale / NXP and Motorola before that.
Key features include an N-channel enhancement-mode structure, high power gain typical of LDMOS RF parts, a rugged drain-to-source voltage rating supporting 50 V operation, and a ceramic NI-880S package with a metal flange for direct bolting to a heatsink or chassis. The package provides low thermal resistance from junction to case, enabling continuous-wave (CW) or pulsed RF power delivery into 50 ohm loads. The part is designed for class AB or class C linear amplifier biasing and pairs with NXP's matching network reference designs.
Typical applications include 88-108 MHz FM broadcast transmitter final stages, 27-50 MHz commercial land-mobile-radio (LMR) power amplifiers, industrial RF heating, plasma generation drivers, and short-range radar systems. Engineers select this family for narrowband CW and pulsed RF amplifiers where LDMOS efficiency and high gain reduce overall transmitter power consumption.
A primary design consideration is the absolute necessity of a proper heatsink with thermal compound; the ceramic power package must be bolted to a flat aluminum or copper spreader to maintain junction temperature within the datasheet rating under CW operation. Engineers should also follow the manufacturer's recommended gate-bias sequencing and use an NXP-recommended harmonic filter at the drain to meet FCC/ETSI spurious emission requirements.
ドロップイン代替品: MRFS35015HSR5 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MRF35015A
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRFE6VP5600H
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF150
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF1500
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF1500A
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRFS35015HSR5 最大定格＆電気的特性
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| トランジスタタイプ | N-Channel RF Power MOSFET |
| Typical Operating Drain Voltage | 50 V |
| パッケージ / ケース | NI-880S ceramic power package |
| 実装タイプ | Chassis-mount, flanged ceramic with bolt-down flange |
| 動作温度範囲 | -40C to +200C (junction, typical power MOSFET range) |
MRFS35015HSR5 ni-880s ceramic power package ピン配置ガイド
MRFS35015HSR5 (ni-880s ceramic power package パッケージ) のピン配置。 このパワーデバイスは、ゲート、ドレイン、ソース端子を備えています。非極性パッケージの場合、正確なピン1の向きとフットプリントの詳細については、メーカーのデータシートを参照してください。主な用途には、電源設計、モータ駆動、負荷スイッチングがあります。
詳細なピン配置データはありません: MRFS35015HSR5.
詳細は データシート をご参照ください。
主な用途
MRFS35015HSR5 の用途: 6 件s: FM Broadcast Transmitter Final Stage, Land Mobile Radio (LMR) Power Amplifier, Industrial RF Heating and Plasma Generation, Short-Range Radar and Telemetry Transmitters, HF/VHF Linear Amplifier Builder, RF Power Lab Bench Amplifier.
FM Broadcast Transmitter Final Stage
The MRFS35015HSR5's N-channel RF LDMOS architecture and 50 V typical drain bias make it well-suited as a final-stage amplifier in 88-108 MHz FM broadcast transmitters where linear class AB operation and high power gain are required. Placed into a 50 ohm input-matching network on the gate side and a microstrip harmonic filter on the drain, the device delivers clean FM modulation with typical power gain above 15 dB. Engineers must bolt the NI-880S flange to a copper spreader and verify junction temperature with a flange-mounted thermocouple during duty-cycle evaluation.
おすすめ
Land Mobile Radio (LMR) Power Amplifier
In 27-50 MHz commercial and public-safety land-mobile-radio power amplifiers the MRFS35015HSR5 is used as a 50 V CW RF driver or final stage with class AB bias. The NI-880S package's low thermal resistance sustains continuous duty voice and data waveforms while the LDMOS structure rejects high VSWR stress. A typical circuit places a T-match input network on the gate and a pi-output network on the drain to deliver multi-hundred-watt CW output at 50 V drain.
おすすめ
Industrial RF Heating and Plasma Generation
Industrial RF heating and plasma generation drivers use the MRFS35015HSR5 in CW oscillation and amplifier topologies at 13.56 MHz, 27 MHz, and 40 MHz ISM bands. The 50 V drain operation produces high RF output power into reactive loads with high drain efficiency, while the rugged ceramic package survives the load-mismatch transients typical of plasma ignition. Matching network and load coil re-tuning is required when migrating between ISM frequencies.
おすすめ
Short-Range Radar and Telemetry Transmitters
Pulsed short-range radar and remote-telemetry transmitters benefit from the MRFS35015HSR5's high peak power and fast switching in HF/VHF bands. The N-channel MOSFET structure simplifies gate-driver timing, and the NI-880S package provides the thermal margin needed for high duty-cycle pulse trains. Pulse-width, duty cycle, and matching network must be re-validated when migrating to alternative MRF-family parts.
おすすめ
HF/VHF Linear Amplifier Builder
Amateur radio and industrial HF/VHF linear amplifier builders use the MRFS35015HSR5 as a final or driver device in 50 V class AB linear amplifiers covering the 1.8-54 MHz amateur bands and adjacent VHF allocations. The LDMOS RF gain reduces drive requirements, and the NI-880S package is a common footprint in this hobby and small-production builder community. Match the manufacturer's reference design and use a directional coupler-based SWR protection circuit to safeguard the part from antenna faults.
おすすめ
RF Power Lab Bench Amplifier
Universities and RF test labs employ the MRFS35015HSR5 in general-purpose 50 V CW bench amplifiers for device characterization, EMC immunity testing, and antenna range excitation. Its N-channel RF MOSFET structure generates stable, repeatable output over the HF/VHF band and the NI-880S chassis-mount form simplifies integration into instrument-grade amplifier modules. Heatsink sizing and forced-air cooling are mandatory at CW duty.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRFS35015HSR5 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF35015A | MRFE6VP5600H | MRF150 | MRF1500 | MRF1500A |
|---|---|---|---|---|---|---|
| Package | NI-880S ceramic flanged power package | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Drain Operating Voltage (typical) | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Frequency Class | HF/VHF (RF power amplifier) | HF/VHF (same family) | VHF/UHF (higher tier) | HF/VHF | HF/VHF | HF/VHF |
| Lifecycle Status | Obsolete | Obsolete | Active (verify with NXP) | Obsolete / last-time-buy | Active in family | Active in family |
| Mounting Style | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic |
主な差別化要因
- Long-established NXP/Freescale RF LDMOS family baseline （vs Generic Chinese-market RF MOSFETs)
- NI-880S flange footprint continuity with MRF1500 and MRFE6VP series （vs MRFE6VP5600H)
- R5 suffix packaging variant - same die as MRF35015A （vs MRF35015A)
設計ノート
Estimated: the NI-880S ceramic power package dissipates RF power across the flange and must be bolted to a flat aluminum or copper spreader with a thin layer of high-quality thermal compound to stay within the maximum junction-temperature rating. Calculate Pdiss = Pout * (1/eta - 1) using the datasheet efficiency curve, measure the flange temperature with a thermocouple during CW evaluation, and derate Tj vs. ambient per the manufacturer derating curve. Forced-air cooling is mandatory at CW output above ~200 W.
Place the RF power transistor at the edge of the PCB with its flange through-bolted to the chassis; this shortens the drain lead and reduces stray inductance. Keep gate and drain microstrip traces on the same RF substrate (typically Rogers RO4003C or FR4 with controlled impedance) and use generous ground via stitching around the package mounting holes to keep the source-return path short. Add a directional-coupler-based SWR sense to protect the device from load mismatch.
Do not attempt to operate the MRFS35015HSR5 without a confirmed datasheet revision, especially when the part is sourced through brokers - early Freescale and later NXP datasheets occasionally revise bias and gain figures. Always sequence gate bias after drain voltage (or use a clamp circuit) to avoid CGH-class oscillation during hot-switching. Finally, do not assume a modern part with the same MPN prefix is pin-compatible; verify the pinout and the matching-network references against the current datasheet before PCB rework.
コンプライアンス情報
RoHS and lead-free status not confirmed in verified web sources; the NI-880S ceramic flanged package family historically predates full RoHS conversion, so request the manufacturer lot compliance documentation before placing environmentally restricted orders. AEC-Q100 not applicable for this through-hole RF power device.
