MRFS35015HSR5 - RF Power MOSFET N-Channel | NXP Semiconductors
N.º da peça: MRFS35015HSR5 ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
MRFS35015HSR5 Visão geral
An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized for linear or pulsed RF amplification at high frequencies and high drain voltages, rather than for low-frequency switching. RF power MOSFETs sit within the wider taxonomy of power transistors (MOSFET, LDMOS, GaN HEMT, BJT), and LDMOS in particular dominates modern cellular broadcast and ISM infrastructure where high gain, high efficiency, and good thermal performance are required. The MRFS35015HSR5 falls into the air-cooled RF power transistor category historically produced by Freescale / NXP and Motorola before that.
Key features include an N-channel enhancement-mode structure, high power gain typical of LDMOS RF parts, a rugged drain-to-source voltage rating supporting 50 V operation, and a ceramic NI-880S package with a metal flange for direct bolting to a heatsink or chassis. The package provides low thermal resistance from junction to case, enabling continuous-wave (CW) or pulsed RF power delivery into 50 ohm loads. The part is designed for class AB or class C linear amplifier biasing and pairs with NXP's matching network reference designs.
Typical applications include 88-108 MHz FM broadcast transmitter final stages, 27-50 MHz commercial land-mobile-radio (LMR) power amplifiers, industrial RF heating, plasma generation drivers, and short-range radar systems. Engineers select this family for narrowband CW and pulsed RF amplifiers where LDMOS efficiency and high gain reduce overall transmitter power consumption.
A primary design consideration is the absolute necessity of a proper heatsink with thermal compound; the ceramic power package must be bolted to a flat aluminum or copper spreader to maintain junction temperature within the datasheet rating under CW operation. Engineers should also follow the manufacturer's recommended gate-bias sequencing and use an NXP-recommended harmonic filter at the drain to meet FCC/ETSI spurious emission requirements.
Alternativas drop-in para MRFS35015HSR5 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRF35015A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRFE6VP5600H
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF150
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF1500
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF1500A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRFS35015HSR5 Classificações máximas e características elétricas
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Tipo de transistor | N-Channel RF Power MOSFET |
| Typical Operating Drain Voltage | 50 V |
| Encapsulamento / Caixa | NI-880S ceramic power package |
| Tipo de montagem | Chassis-mount, flanged ceramic with bolt-down flange |
| Faixa de temperatura de operação | -40C to +200C (junction, typical power MOSFET range) |
Guia de Configuração de Pinos do MRFS35015HSR5 ni-880s ceramic power package
Configuração de pinos para MRFS35015HSR5 (pacote ni-880s ceramic power package). Este dispositivo de potência possui terminais de gate, drain e source. Para pacotes não polarizados, consulte o datasheet do fabricante para a orientação exata do pino 1 e detalhes do footprint. Aplicações comuns incluem projeto de fontes de alimentação, acionamento de motores e comutação de cargas.
Nenhum dado detalhado de pinagem disponível para MRFS35015HSR5.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
MRFS35015HSR5 é adequado para 6 aplicaçãos: FM Broadcast Transmitter Final Stage, Land Mobile Radio (LMR) Power Amplifier, Industrial RF Heating and Plasma Generation, Short-Range Radar and Telemetry Transmitters, HF/VHF Linear Amplifier Builder, RF Power Lab Bench Amplifier.
FM Broadcast Transmitter Final Stage
The MRFS35015HSR5's N-channel RF LDMOS architecture and 50 V typical drain bias make it well-suited as a final-stage amplifier in 88-108 MHz FM broadcast transmitters where linear class AB operation and high power gain are required. Placed into a 50 ohm input-matching network on the gate side and a microstrip harmonic filter on the drain, the device delivers clean FM modulation with typical power gain above 15 dB. Engineers must bolt the NI-880S flange to a copper spreader and verify junction temperature with a flange-mounted thermocouple during duty-cycle evaluation.
Recomendado
Land Mobile Radio (LMR) Power Amplifier
In 27-50 MHz commercial and public-safety land-mobile-radio power amplifiers the MRFS35015HSR5 is used as a 50 V CW RF driver or final stage with class AB bias. The NI-880S package's low thermal resistance sustains continuous duty voice and data waveforms while the LDMOS structure rejects high VSWR stress. A typical circuit places a T-match input network on the gate and a pi-output network on the drain to deliver multi-hundred-watt CW output at 50 V drain.
Recomendado
Industrial RF Heating and Plasma Generation
Industrial RF heating and plasma generation drivers use the MRFS35015HSR5 in CW oscillation and amplifier topologies at 13.56 MHz, 27 MHz, and 40 MHz ISM bands. The 50 V drain operation produces high RF output power into reactive loads with high drain efficiency, while the rugged ceramic package survives the load-mismatch transients typical of plasma ignition. Matching network and load coil re-tuning is required when migrating between ISM frequencies.
Recomendado
Short-Range Radar and Telemetry Transmitters
Pulsed short-range radar and remote-telemetry transmitters benefit from the MRFS35015HSR5's high peak power and fast switching in HF/VHF bands. The N-channel MOSFET structure simplifies gate-driver timing, and the NI-880S package provides the thermal margin needed for high duty-cycle pulse trains. Pulse-width, duty cycle, and matching network must be re-validated when migrating to alternative MRF-family parts.
Recomendado
HF/VHF Linear Amplifier Builder
Amateur radio and industrial HF/VHF linear amplifier builders use the MRFS35015HSR5 as a final or driver device in 50 V class AB linear amplifiers covering the 1.8-54 MHz amateur bands and adjacent VHF allocations. The LDMOS RF gain reduces drive requirements, and the NI-880S package is a common footprint in this hobby and small-production builder community. Match the manufacturer's reference design and use a directional coupler-based SWR protection circuit to safeguard the part from antenna faults.
Recomendado
RF Power Lab Bench Amplifier
Universities and RF test labs employ the MRFS35015HSR5 in general-purpose 50 V CW bench amplifiers for device characterization, EMC immunity testing, and antenna range excitation. Its N-channel RF MOSFET structure generates stable, repeatable output over the HF/VHF band and the NI-880S chassis-mount form simplifies integration into instrument-grade amplifier modules. Heatsink sizing and forced-air cooling are mandatory at CW duty.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRFS35015HSR5 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRF35015A | MRFE6VP5600H | MRF150 | MRF1500 | MRF1500A |
|---|---|---|---|---|---|---|
| Package | NI-880S ceramic flanged power package | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Drain Operating Voltage (typical) | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Frequency Class | HF/VHF (RF power amplifier) | HF/VHF (same family) | VHF/UHF (higher tier) | HF/VHF | HF/VHF | HF/VHF |
| Lifecycle Status | Obsolete | Obsolete | Active (verify with NXP) | Obsolete / last-time-buy | Active in family | Active in family |
| Mounting Style | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic | Chassis-bolt, flanged ceramic |
Principais diferenciais
- Long-established NXP/Freescale RF LDMOS family baseline (vs Generic Chinese-market RF MOSFETs)
- NI-880S flange footprint continuity with MRF1500 and MRFE6VP series (vs MRFE6VP5600H)
- R5 suffix packaging variant - same die as MRF35015A (vs MRF35015A)
Notas de projeto
Estimated: the NI-880S ceramic power package dissipates RF power across the flange and must be bolted to a flat aluminum or copper spreader with a thin layer of high-quality thermal compound to stay within the maximum junction-temperature rating. Calculate Pdiss = Pout * (1/eta - 1) using the datasheet efficiency curve, measure the flange temperature with a thermocouple during CW evaluation, and derate Tj vs. ambient per the manufacturer derating curve. Forced-air cooling is mandatory at CW output above ~200 W.
Place the RF power transistor at the edge of the PCB with its flange through-bolted to the chassis; this shortens the drain lead and reduces stray inductance. Keep gate and drain microstrip traces on the same RF substrate (typically Rogers RO4003C or FR4 with controlled impedance) and use generous ground via stitching around the package mounting holes to keep the source-return path short. Add a directional-coupler-based SWR sense to protect the device from load mismatch.
Do not attempt to operate the MRFS35015HSR5 without a confirmed datasheet revision, especially when the part is sourced through brokers - early Freescale and later NXP datasheets occasionally revise bias and gain figures. Always sequence gate bias after drain voltage (or use a clamp circuit) to avoid CGH-class oscillation during hot-switching. Finally, do not assume a modern part with the same MPN prefix is pin-compatible; verify the pinout and the matching-network references against the current datasheet before PCB rework.
Informações de conformidade
RoHS and lead-free status not confirmed in verified web sources; the NI-880S ceramic flanged package family historically predates full RoHS conversion, so request the manufacturer lot compliance documentation before placing environmentally restricted orders. AEC-Q100 not applicable for this through-hole RF power device.
