MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
部品番号: MW7IC2040NBR1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $25.5 | $25.50 |
| 10 | $22.95 | $229.50 |
| 100 | $19.5 | $1,950.00 |
| 500 | $17.1 | $8,550.00 |
| 1,000 | $15.2 | $15,200.00 |
MW7IC2040NBR1 概要
An RF power amplifier (PA) is the final active stage in a wireless transmitter chain that boosts the modulated RF signal from milliwatt-level driver stages up to watts of output power for the antenna. Integrated PAs such as the MW7IC2040NBR1 combine the input/output matching networks and bias circuitry on the same silicon die, allowing cellular base-station and repeater designers to shorten the bill of materials and reduce PCB tuning time compared with discrete LDMOS designs.
Key features include 23.5 dB typical small-signal gain, a 32 V maximum supply voltage rating, 75 mA quiescent supply current, on-chip input and inter-stage matching, and built-in ESD protection. The TO-272-16 over-molded plastic package provides a low thermal-resistance path to the system heatsink, suitable for continuous-wave (CW) and W-CDMA/GSM/EDGE cellular modulation formats.
Architecturally, the MW7IC2040NBR1 is a multi-stage cascaded amplifier: a low-power driver stage feeds an intermediate stage that drives the final LDMOS output device. Each stage uses on-chip transmission-line matching, which keeps the part drop-in usable across the 1805-1990 MHz band without any customer-applied external matching. The wide-bandgap LDMOS technology gives high drain efficiency and ruggedness into a high VSWR load.
Typical applications include W-CDMA, GSM and EDGE cellular base-station driver and final PAs, 1800 MHz DCS and 1900 MHz PCS band amplifiers, and wireless-infrastructure repeaters. It is also useful as a generic 1.8 to 2.0 GHz RF block for industrial and aerospace transmitter designs.
When designing in this part, heatsink the exposed pad to a copper area on the PCB rated for the worst-case continuous dissipation. Avoid running the device below 24 V on the drain, since linearity and efficiency degrade; for lower-voltage applications, evaluate the MW7IC2040NR1/2040GNR1 family variants.
This page synthesizes distributor pricing, drop-in alternatives and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: MW7IC2040NBR1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MW7IC2040NBR1 （同一形状・フットプリント） — 相違点: Mounting Type, Technology, Frequency Range, Package / Case, Function.
クイック比較ツール — 並列比較する代替部品を選択:
MW7IC2040NR1
✅ ドロップイン✓ 在庫あり
$24.2 / 個
データシートを見る →MW7IC2040GNR1
✅ ドロップイン✓ 在庫あり
$17.5 / 個
データシートを見る →MW7IC2240NR1
✅ ドロップイン✓ 在庫あり
$13.16 / 個
データシートを見る →MW7IC930GNR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MW7IC2725GNR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MW7IC2040NBR1 最大定格＆電気的特性
| RF Type | General Purpose |
| Frequency Range | 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) |
| Test Frequency | 1990 MHz |
| Gain | 23.5 dB (typ at 1990 MHz) |
| Output Power (P1dB/avg) | 4 W (family rating) |
| 電源電圧 | 24 V to 32 V |
| Quiescent Supply Current | 75 mA (typ) |
| パッケージ / ケース | TO-272-16 Variant, Flat Leads |
| 実装タイプ | Surface Mount |
| Technology | RF LDMOS (later-generation, on-chip matching) |
| Number of Functions | 1 (multi-stage integrated PA) |
| Modulation Support | W-CDMA, GSM, EDGE, CW |
| RoHS ステータス | Compliant (per ETEI / distributor data) |
MW7IC2040NBR1 ピン構成
| ピン 1 | RFIN — RF input (on-chip matched) |
| ピン 2 | GND — Ground (package flange/exposed pad is the main thermal and RF return) |
| ピン 3 | NC — Not connected (per datasheet) |
| ピン 4 | NC — Not connected (per datasheet) |
| ピン 5 | VGG — Gate bias supply (driver stage) |
| ピン 6 | GND — Ground |
| ピン 7 | NC — Not connected (per datasheet) |
| ピン 8 | NC — Not connected (per datasheet) |
| ピン 9 | VD1 — Drain supply (driver stage) |
| ピン 10 | GND — Ground |
| ピン 11 | NC — Not connected (per datasheet) |
| ピン 12 | NC — Not connected (per datasheet) |
| ピン 13 | VGG2 — Gate bias supply (final stage) |
| ピン 14 | GND — Ground |
| ピン 15 | VD2 — Drain supply (final stage, main 28 V rail) |
| ピン 16 | RFOUT — RF output (on-chip matched) |
安全動作領域 (DC)
主な用途
MW7IC2040NBR1 の用途: 6 件s: W-CDMA Cellular Base-Station Driver PA, GSM / EDGE Transmitter Final Stage, PCS 1900 MHz Repeater / Booster PA, Industrial / Aerospace 1.8-2.0 GHz Block, Driver for Higher-Power LDMOS Final Stages, Test & Measurement RF Source Front-End.
W-CDMA Cellular Base-Station Driver PA
Boosts 1.8-1.99 GHz cellular signals from milliwatt driver stages up to 4 W for small-cell base-station lineups. The MW7IC2040NBR1's 23.5 dB gain and on-chip matching make it a turn-key 28 V solution that simplifies the W-CDMA ACLR budget and reduces PCB tuning time. Pairing with a downstream higher-power LDMOS final stage minimizes PCB area while keeping the front-end BOM short.
おすすめ
GSM / EDGE Transmitter Final Stage
Provides the last amplification step in 900/1800/1900 MHz GSM and EDGE transmitters where 4 W of output power is sufficient. The MW7IC2040NBR1's later-generation LDMOS process maintains linearity needed for EDGE 8-PSK constellations while delivering high drain efficiency on 28 V rails. Its on-chip matching reduces part count and frees up board space for filter and duplexer components.
おすすめ
PCS 1900 MHz Repeater / Booster PA
Used as the inline power block in RF repeaters and signal boosters covering the 1930-1990 MHz PCS downlink. The MW7IC2040NBR1 offers 23.5 dB of gain from a single 24-32 V supply, which lets repeater designers place the amplifier close to the antenna with minimal loss. Its small TO-272-16 footprint supports compact indoor repeater enclosures without sacrificing thermal margin.
おすすめ
Industrial / Aerospace 1.8-2.0 GHz Block
Acts as a generic 4 W RF block for industrial telemetry links, UAV command uplinks and unlicensed 1.8-1.9 GHz industrial-scientific-medical transmitters. The MW7IC2040NBR1's wide 24-32 V supply tolerance and on-chip matching simplify qualification testing, while the ruggedness of LDMOS handles the high-VSWR loads typical of compact terminal antennas. This is one of the few drop-in parts in this band from an authorized supply chain.
おすすめ
Driver for Higher-Power LDMOS Final Stages
Drives a downstream higher-power LDMOS output device in macro-cell base-station lineups. The MW7IC2040NBR1's 4 W output and 23.5 dB gain provide sufficient headroom to push a 30-60 W final PA into compression while maintaining its own linear region. Both devices typically share the same TO-272-16 footprint, which lets designers place them on a common heatsink panel.
おすすめ
Test & Measurement RF Source Front-End
Serves as the final amplifier stage in a low-power CW/AM signal source for laboratory and production test equipment covering 1805-1990 MHz. The MW7IC2040NBR1's flat gain and on-chip matching let the source maintain amplitude accuracy without per-unit tuning, while the TO-272-16 package simplifies rework and probe contact during characterization. The 24-32 V rail tolerates common bench supplies.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MW7IC2040NBR1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MW7IC2040NR1 | MW7IC2040GNR1 | MW7IC2240NR1 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same |
| Package | TO-272-16 (Flat Leads) | TO-272-16 (Flat Leads) - same | TO-272-16 (Flat Leads) - same | TO-272-16 (Flat Leads) - same |
| Frequency Range | 1805-1990 MHz | 1805-1990 MHz - same | 1805-1990 MHz - same | 2.2-2.7 GHz - different band |
| Supply Voltage | 24 V to 32 V | 24 V to 32 V | 24 V to 32 V | 24 V to 32 V (family) |
| On-chip Matching | Yes | Yes | Yes | Yes |
| Technology | RF LDMOS (later-gen) | RF LDMOS (later-gen) | RF LDMOS (later-gen) | RF LDMOS (later-gen) |
主な差別化要因
- Family-internal drop-in for identical 1.8-1.99 GHz band and TO-272-16 footprint （vs MW7IC2040NR1)
- Drop-in sibling with same die, same parameters （vs MW7IC2040GNR1)
- Different operating band on the same package （vs MW7IC2240NR1)
設計ノート
The TO-272-16 flange is the main RF ground and the primary thermal path. Solder the exposed pad to a copper heatsink area (typically 1 square inch or larger of 2 oz copper) and add a thermal-interface material and external heatsink for continuous W-CDMA operation. Estimated: with 4 W Pout at 28 V and ~50% drain efficiency, internal dissipation can be several watts; without proper heatsinking the junction will exceed safe limits.
Place RF input/output traces as 50 ohm controlled-impedance lines (microstrip or grounded coplanar waveguide) and keep them as short as possible to the package flange. Use 0402 or 0603 ceramic bypass capacitors as close as practical to the VDD pins, with a ferrite bead or RF choke in series with the drain feed. Keep gate-bias traces away from the RF output to avoid parasitic feedback.
Do not exceed the 32 V absolute maximum drain supply, and never operate below 24 V on the drain if W-CDMA linearity must be guaranteed. Source the gate bias from a low-noise, low-drift supply - a noisy VGG will modulate the gain and degrade ACLR. Avoid running the device into an open-circuit load; high-VSWR events can cause parametric shifts even when the SOA is not formally exceeded.
コンプライアンス情報
RoHS and REACH compliance are flagged 'compliant' by ETEI cross-reference pages and DigiKey parametric data; lead-free is implied by the TO-272-16 plastic package family. Halogen-free status is not stated in the verified data and is left as 'unknown'. Not AEC-Q100: this is a base-station RF PA, not an automotive-grade part.
