MW7IC2240NR1 - 4W W-CDMA RF LDMOS PA, 2110-2170 MHz | NXP
MPN: MW7IC2240NR1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $21.94 | $21.94 |
| 10 | $19.74 | $197.40 |
| 100 | $17.55 | $1,755.00 |
| 500 | $15.36 | $7,680.00 |
| 1,000 | $13.16 | $13,160.00 |
MW7IC2240NR1 Overview
An RF power amplifier (RF PA) is the final active stage in a wireless transmitter that boosts a low-level modulated RF signal to a transmission power level suitable for radiation by the antenna. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) has historically been the dominant PA technology for sub-3.5 GHz macro-cell base stations because of its high power density, mature supply chain, excellent ruggedness into high VSWR loads, and good linearity at reasonable cost. Within the transmitter chain, an RF PA sits between the driver amplifier and the duplexer/filter, feeding the antenna through the radio's front-end module.
Key specifications include 4 W average output power (W-CDMA), 15 dB minimum power gain, 28 V typical drain supply, and stable operation into a 5:1 VSWR load. The device integrates quiescent-current temperature compensation and an enable function, simplifying bias sequencing across the radio's temperature range. All spurs are specified below -60 dBc from 100 mW to 10 W CW Pout, and the part is characterized with series equivalent large-signal impedance parameters and common-source S-parameters for accurate circuit-level simulation.
The MW7IC2240NR1 uses NXP's 7th-generation LDMOS process with on-chip matching networks that eliminate the external inter-stage match required by discrete PA designs. This integration reduces board area and BOM count while improving unit-to-unit gain and phase repeatability, both of which are critical for Doherty and other efficiency-boosting architectures in modern base-station line-ups.
Typical applications include W-CDMA/LTE base-station driver stages, TD-SCDMA power amplifiers, multi-carrier GSM/EDGE linear amplifiers, and general-purpose 2.11-2.17 GHz RF transmitters. The wide 2000-2200 MHz usable bandwidth also makes it useful for industrial ISM-band links adjacent to the cellular band.
When designing with this part, ensure the PCB uses the recommended land pattern with a continuous ground pad under the ceramic body for thermal dissipation, and respect the 32 V maximum drain supply to avoid exceeding the LDMOS breakdown voltage under load transients. A proper heatsink or cold plate is required at full Pout to keep the die within its 200 C maximum junction temperature rating.
This page synthesizes distributor pricing, drop-in same-package alternatives from the MW7IC2240 family, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for MW7IC2240NR1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MW7IC2240NR1 (same form factor and footprint) — differing in Technology, Frequency Range, Mounting Type, Modulation Support, Nominal Impedance.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MW7IC2240GNR1
✅ Drop-In📋 Reference alternative (not in catalog)
MW7IC2240NBR1
✅ Drop-In✓ In Stock
$29 / Unit
View Datasheet →MW7IC2240NR1G
✅ Drop-In📋 Reference alternative (not in catalog)
MW7IC2240NR1 Maximum Ratings & Electrical Characteristics
| Function | RF Power Amplifier (W-CDMA, multi-stage) |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) |
| Average Output Power | 4 W (W-CDMA, 28 V) |
| Power Gain (Min) | 15 dB |
| Drain Supply Voltage | 24 V to 32 V (28 V typical) |
| Input VSWR | 5:1 |
| Output VSWR | 5:1 |
| Nominal Impedance | 50 ohm (DC-blocked input, >3 ohm output) |
| Spurious Emissions | Below -60 dBc from 100 mW to 10 W CW Pout |
| On-Chip Matching | Yes (input 50 ohm DC-blocked, partial output) |
| Quiescent Current Compensation | Integrated with temperature compensation |
| Enable Function | Yes |
| Package | TO-270 WBL-16 (TO-270WB16), 16-pin ceramic |
| Operating Modulation Formats | W-CDMA, TD-SCDMA, LTE-FDD, multi-carrier |
| Mounting Type | Surface Mount / flange mount with ground pad |
MW7IC2240NR1 Pin Configuration
| Pin 1 | RF_IN — RF input (50 ohm, DC-blocked, on-chip matched) |
| Pin 2 | VG1 — Gate bias for driver stage |
| Pin 3 | VDD1 — Drain supply for driver stage |
| Pin 4 | GND — Ground (flange/ceramic back side) |
| Pin 5 | VDD2 — Drain supply for final stage |
| Pin 6 | VG2 — Gate bias for final stage |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | EN — Enable / temperature-compensation pin |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | RF_OUT — RF output (>3 ohm nominal, requires external matching) |
| Pin 16 | GND — Ground (flange/ceramic back side) |
RF Safe Operating Area (DC Bias, pulsed)
Typical Applications
MW7IC2240NR1 is suitable for 6 applications: W-CDMA / LTE Base-Station Power Amplifier, TD-SCDMA Base-Station Driver Stage, Multi-Carrier GSM/EDGE Linear Amplifier, Industrial / Scientific 2.1-2.2 GHz Transmitter, Small-Cell / Femtocell Radio Final Stage, Doherty Amplifier Driver / Main Path.
W-CDMA / LTE Base-Station Power Amplifier
The MW7IC2240NR1 is purpose-built for the 2110-2170 MHz UMTS Band 1 downlink, delivering 4 W average W-CDMA power from a 28 V LDMOS supply. Its 24-32 V drain range lets the same PA cover W-CDMA, TD-SCDMA, and LTE-FDD modulation without re-matching. On-chip 50-ohm DC-blocked input matching eliminates the external inter-stage network required by discrete LDMOS designs, while the integrated quiescent-current temperature compensation holds gain and ACPR flat across -30 C to +85 C case temperature for outdoor RRH deployments.
Recommended
TD-SCDMA Base-Station Driver Stage
The MW7IC2240NR1's broad 2000-2200 MHz matching window and 4 W output class make it well suited as the driver stage feeding a higher-power final PA in TD-SCDMA base-station line-ups. The 28 V LDMOS bias and on-chip matching simplify thermal and RF layout, while the 15 dB minimum gain provides enough headroom to drive a 25-40 W final LDMOS stage with margin. Designers can place the MW7IC2240NR1 between the transceiver AGC loop and the final PA to set the radio's overall gain budget and linearity floor.
Recommended
Multi-Carrier GSM/EDGE Linear Amplifier
Although optimized for W-CDMA, the MW7IC2240NR1's linearity and integrated quiescent-current compensation allow it to operate as a linear amplifier for multi-carrier GSM/EDGE signals in the 2110-2170 MHz band. Its stable operation into 5:1 VSWR protects the PA against antenna-feed mismatches typical of small-cell and micro-cell installations. The 28 V supply aligns with the standard -48 V telecom rail after DC-DC conversion, simplifying power-system design in distributed radio architectures.
Recommended
Industrial / Scientific 2.1-2.2 GHz Transmitter
The MW7IC2240NR1's usable 2000-2200 MHz matching range and 4 W average output cover the 2.1-2.2 GHz ISM-adjacent industrial telemetry band where licensed wideband channels are available. Its LDMOS ruggedness into high VSWR makes it tolerant of antenna faults in unattended outdoor sensor networks. The integrated enable function allows duty-cycled operation, reducing average dissipation in battery-backed remote units that transmit in short bursts.
Recommended
Small-Cell / Femtocell Radio Final Stage
For small-cell and femtocell radios that need sub-5 W output at 2110-2170 MHz without the cost of a GaN PA, the MW7IC2240NR1 is a strong candidate for the final stage. The TO-270 WBL-16 ceramic package provides a low-thermal-resistance path to the radio's cold plate, and the 24-32 V drain range allows operation from a single-step-down telecom rail. The on-chip matching networks keep the bill of materials small enough to fit inside a compact small-cell chassis.
Recommended
Doherty Amplifier Driver / Main Path
In a 2110-2170 MHz Doherty amplifier line-up, the MW7IC2240NR1 can serve as either the main-path PA or the driver feeding a higher-power peaking amplifier. Its 15 dB minimum gain and 5:1 VSWR stability support the high peak-to-average ratio (PAR) signals typical of LTE-FDD without gain compression. Designers using this part in Doherty configurations should refer to the NXP datasheet's large-signal impedance tables for proper output-combiner design and phase alignment.
Recommended
Recommended Products Summary
Engineering reference data for MW7IC2240NR1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MW7IC2240GNR1 | MW7IC2240NBR1 | MW7IC2240NR1G |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WBL-16 | TO-270 WBL-16 (same) | TO-270 WBL-16 (same) | TO-270 WBL-16 (same) |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Average Output Power | 4 W | 4 W | 4 W | 4 W |
| Drain Supply (Typ) | 28 V | 28 V | 28 V | 28 V |
| Minimum Gain | 15 dB | 15 dB | 15 dB | 15 dB |
| On-Chip Matching | Input 50 ohm DC-blocked, output >3 ohm | Same | Same | Same |
| VSWR Ruggedness | 5:1 | 5:1 | 5:1 | 5:1 |
| Enable Function | Yes | Yes | Yes | Yes |
| Quiescent-Current Temp Compensation | Integrated | Integrated | Integrated | Integrated |
Key Differentiators
- Same-family drop-in alternative with identical TO-270 WBL-16 footprint and same-band tuning (vs MW7IC2240GNR1)
- Same-family mask-revision variant with identical electrical interface (vs MW7IC2240NBR1)
- TO-270 WBL-16 ceramic package with integrated on-chip input matching (50 ohm DC-blocked) (vs MW7IC930NR1)
Design Notes
At 4 W average RF output from a 28 V drain, the MW7IC2240NR1 dissipates several watts of DC power that must be conducted through the ceramic flange to a heatsink or cold plate. Per the NXP datasheet, the case temperature must remain below 85 C at full Pout to keep the junction under its 200 C maximum. Use a continuous ground pad under the ceramic body, a high-thermal-conductivity PCB dielectric (or no dielectric in the heat-flow path), and torque the mounting screws to the datasheet-specified value to minimize thermal interface resistance.
Follow the NXP-recommended land pattern in the MW7IC2240N datasheet for the TO-270 WBL-16 footprint. Keep the RF input trace as a 50-ohm microstrip or coplanar waveguide with continuous ground on the second layer, and place the input DC-block capacitor (the part is DC-blocked on-chip) as close to the RF_IN lead as possible. For the output (>3 ohm nominal), use the datasheet's large-signal impedance tables to synthesize the matching network; do NOT assume 50 ohm at the output pin. The enable and VG bias traces should be routed away from the RF path and bypassed with 100 nF + 10 uF decoupling at the package lead.
Do not exceed 32 V on the drain supply; LDMOS breakdown is well below that voltage at the operating currents. Apply the VG gate bias BEFORE the drain supply to prevent uncontrolled quiescent-current spikes at power-up, and follow the enable-pin sequencing in the datasheet timing diagram. Avoid replacing this part with the MW7IC930NR1 (900 MHz) or MW7IC915NT1 on the same PCB - the on-chip matching networks are band-specific and gain will collapse. Always use a proper RF heatsink compound and re-torque the flange screws after thermal cycling in production testing.
Compliance Information
RoHS and lead-free per NXP product page. AEC-Q100 not applicable (this is an RF PA for telecom infrastructure, not automotive). REACH and conflict-mineral status confirmed by NXP franchised distributors; halogen-free status should be confirmed with the specific reel at order time.
