NTMFS4C324NT1G - 30V N-Ch Trench MOSFET, 1.7mΩ | onsemi
部品番号: NTMFS4C324NT1G ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.78 | $7.80 |
| 100 | $0.59 | $59.00 |
| 500 | $0.48 | $240.00 |
| 1,000 | $0.42 | $420.00 |
NTMFS4C324NT1G 概要
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between source and drain terminals. Within the semiconductor taxonomy, MOSFETs sit under discrete transistors, under discrete semiconductors, and ultimately under power management and switching conversion. The TRENCH 6 generation from onsemi reduces Rds(on) per unit silicon area by carving vertical gate trenches into the die, lowering both conduction loss and gate charge compared to earlier planar or Trench 3 generations.
Key features include an ultra-low 1.7 mΩ Rds(on) at VGS = 10 V, integrated ESD diode protection, an avalanche-energy rating of 549 mJ (EAS) for unclamped inductive switching events, and an SO-8FL (5x6 mm) package with a large exposed thermal pad. The low gate charge (Qg typical values in the 50-70 nC range) enables fast switching transitions, while the low Rds(on) reduces I²R conduction loss in high-current paths.
The TRENCH 6 architecture optimizes the figure of merit (FOM = Rds(on) × Qg) that determines switching-converter efficiency. Compared to older Trench 3 or Trench 5 generations, the NTMFS4C324N delivers lower conduction loss for a given die size, enabling either a smaller PCB footprint for the same current rating or higher current handling for the same footprint. The 30 V VDS rating aligns with typical 12 V bus rails used in computing, telecom, and industrial systems.
Typical applications include high-current DC-DC converters (synchronous rectifiers on 12 V rails), OR-ing FETs in redundant power systems, hot-swap circuits on plug-in modules, motor drive half-bridges for low-voltage BLDC motors, and battery protection in multi-cell lithium packs. The low Rds(on) makes it especially effective as the low-side synchronous rectifier in buck converters where conduction loss dominates at heavy loads.
When designing with this device, observe strict thermal management: at 30 A with 1.7 mΩ Rds(on), conduction loss reaches 1.53 W, so a substantial copper pour or thermal via array under the exposed pad is mandatory. Gate-drive voltage should remain within the ±20 V VGS absolute maximum to prevent oxide rupture, and a small gate-source resistor (10-100 Ω) is recommended to suppress ringing.
This page synthesizes onsemi datasheet values, drop-in alternative recommendations, and PCB-level design notes not found in the manufacturer datasheet alone, giving procurement and engineering teams a single decision-grade reference for the NTMFS4C324NT1G.
ドロップイン代替品: NTMFS4C324NT1G — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: NTMFS4C324NT1G （同一形状・フットプリント） — 相違点: Drain-Source Voltage (VDS), Manufacturer, Package, Technology.
クイック比較ツール — 並列比較する代替部品を選択:
NTMFS4C322NT1G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NTMFS4C320NT1G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NTMFS4C302NT1G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSC010NE2LSIATMA1
✅ ドロップイン✓ 在庫あり
$0.92 / 個
データシートを見る →NTMFS4C324NT1G 最大定格＆電気的特性
| Manufacturer | onsemi |
| Part Number | NTMFS4C324NT1G |
| Technology | TRENCH 6 N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Tc | 136 A |
| Continuous Drain Current (ID) at Ta | 30 A |
| Pulsed Drain Current (IDM) | 352 A |
| Rds(on) at VGS=10V | 1.7 mΩ typical |
| Single Pulse Avalanche Energy (EAS) | 549 mJ |
| Power Dissipation at Ta | 3.1 W |
| Power Dissipation at Tc | 64 W |
| パッケージ | 5-DFN (5x6 mm), SO-8FL equivalent |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant |
| Tape and Reel Quantity | 1500 pcs |
NTMFS4C324NT1G ピン構成
| ピン 1 | Gate — Gate control input (10 V VGS for full enhancement) |
| ピン 2 | Source — Source terminal (Kelvin source for gate return) |
| ピン 3 | Source — Source terminal |
| ピン 4 | Drain — Drain terminal (connected to exposed thermal pad) |
| ピン 5 | Drain — Drain terminal (connected to exposed thermal pad) |
安全動作領域 (DC, Ta = 25 C)
主な用途
NTMFS4C324NT1G の用途: 7 件s: 12 V Synchronous Rectifier, OR-ing FET for Redundant Power, Hot-Swap Circuit for Plug-In Modules, Low-Voltage BLDC Motor Drive, Battery Protection in Multi-Cell Packs, USB-PD Power Path Switch, Telecom 48 V Intermediate Bus.
12 V Synchronous Rectifier
The NTMFS4C324NT1G serves as the low-side synchronous rectifier in 12 V to 1-3.3 V buck converters used in telecom and computing power supplies. Its 1.7 mΩ Rds(on) at 10 V VGS keeps conduction loss at ~1.5 W for a 30 A load, while the TRENCH 6 process provides low Qg for sub-100 ns switching transitions. Placed on the low-side of a half-bridge with the high-side driver (e.g., onsemi NCP81151) controlling bootstrap timing, the 324 outperforms Trench 5 generation parts by 20-30% in conduction efficiency, directly raising system efficiency by 1-2 percentage points in a 300 kHz buck converter and reducing heatsink requirements.
おすすめ
OR-ing FET for Redundant Power
In N+1 redundant 12 V power systems, the NTMFS4C324NT1G acts as an OR-ing FET that isolates a failed power supply from the live bus. The 1.7 mΩ Rds(on) keeps voltage drop below 50 mV at 30 A load, preserving efficiency and reducing ground-referenced return losses. The 30 V VDS rating provides 150% margin above the 12 V nominal rail, accommodating hot-plug transients. The SO-8FL package with exposed pad supports the 64 W Tc dissipation rating required when the FET operates in linear region during supply switchover events.
おすすめ
Hot-Swap Circuit for Plug-In Modules
The NTMFS4C324NT1G is used as the inrush-limiting pass element on 12 V hot-swap controllers for plug-in cards and telecom line cards. The 549 mJ EAS rating absorbs the energy from bulk-capacitor charge-up during module insertion, while the SO-8FL package handles the linear-region dissipation during the controlled turn-on ramp. The 30 V VDS rating handles the worst-case bus transients, and the 1.7 mΩ Rds(on) keeps the fully-on conduction loss below 100 mW at 8 A continuous load per slot.
おすすめ
Low-Voltage BLDC Motor Drive
In low-voltage brushless DC motor drives for 12-24 V battery-powered tools and e-bike hub motors, the NTMFS4C324NT1G is the low-side FET in a three-phase half-bridge topology. The 1.7 mΩ Rds(on) at 10 V VGS minimizes conduction loss during the PWM-on phase, while the 136 A pulsed current rating handles motor stall transients. The TRENCH 6 figure of merit (FOM) reduces switching loss at 20-50 kHz PWM, enabling higher torque-per-amp efficiency than older Trench 5 parts.
おすすめ
Battery Protection in Multi-Cell Packs
The NTMFS4C324NT1G serves as the discharge FET in 4-7 cell lithium-ion battery packs for power tools and e-mobility. The 30 V VDS rating covers the 4.2 V × 7 = 29.4 V fully-charged stack with zero transient margin, suiting it for 4-6S (16.8-25.2 V) packs with adequate derating. The 1.7 mΩ Rds(on) at 10 V VGS keeps conduction loss below 5 W during continuous 50 A discharge, while the SO-8FL package exposes the thermal pad for direct PCB heatsinking in the battery management board layout.
おすすめ
USB-PD Power Path Switch
In USB-PD 3.1 sink devices delivering 5 A at 20 V (100 W), the NTMFS4C324NT1G acts as the main bus switch on the VBUS rail. The 30 V VDS rating handles 20 V PD contracts with 50% margin, and the 1.7 mΩ Rds(on) at 10 V VGS limits conduction loss to ~425 mW at 5 A load. The SO-8FL package with exposed thermal pad dissipates the resulting heat into a 1 square inch copper pour, eliminating heatsink requirements in compact laptop and tablet designs.
おすすめ
Telecom 48 V Intermediate Bus
Although the NTMFS4C324NT1G is rated 30 V, the same SO-8FL pinout in higher VDS ratings (NTMFS4C5xx family) is widely used on 48 V telecom intermediate bus converters. This 30 V variant suits secondary-side synchronous rectification on 24 V bus architectures and 28 V aerospace/military bus systems, where its 1.7 mΩ Rds(on) keeps conduction loss low at the 20-30 A loads typical of brick-style converters.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: NTMFS4C324NT1G — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | NTMFS4C322NT1G | NTMFS4C320NT1G | NTMFS4C302NT1G | BSC010NE2LS |
|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | Infineon |
| Package | 5-DFN (5x6 mm) SO-8FL | 5-DFN (5x6 mm) SO-8FL - same | 5-DFN (5x6 mm) SO-8FL - same | 5-DFN (5x6 mm) SO-8FL - same | SuperSO8 (5x6 mm) - similar |
| VDS (V) | 30 | 30 | 30 | 30 | 30 |
| Rds(on) at 10V (mΩ) | 1.7 | ~2.0 | ~2.5 | ~2.4 | 1.7 |
| Process Technology | TRENCH 6 | TRENCH 6 | TRENCH 6 | TRENCH 6 | OptiMOS 5 |
主な差別化要因
- Ultra-low 1.7 mΩ Rds(on) at 10 V VGS （vs BSC010NE2LS)
- Higher 136 A continuous drain current at Tc （vs BSC010NE2LS)
- 549 mJ single-pulse avalanche energy rating （vs NTMFS4C302NT1G)
設計ノート
At 30 A continuous drain current with 1.7 mΩ Rds(on), conduction loss reaches approximately 1.53 W. The SO-8FL package has a typical theta_JA of 50 C/W on a standard 1 oz FR4 PCB with 1 square inch copper pour and a thermal via array under the exposed pad. Estimated junction temperature rise: 1.53 W × 50 C/W = 76.5 C above ambient. For sustained loads above 30 A, increase copper area to 2+ square inches and use 2 oz copper plating to keep Tj below 125 C.
The SO-8FL package requires a copper pad with at least 6 thermal vias (0.3 mm drill, 0.5 mm pitch) directly under the exposed pad to achieve the rated 64 W Tc power dissipation. Place input/output capacitors and gate driver within 5 mm of the drain/source pins to minimize parasitic inductance. Use a wide source plane to spread return current and reduce source inductance, which controls switching loss and ringing.
Use a Kelvin source layout when possible: route the gate-driver ground return directly to the source pin rather than the system ground plane, to eliminate source-inductance-induced gate-drive ringing. Place a 10 Ω to 100 Ω gate-source resistor close to the gate pin to suppress dv/dt-induced turn-on. Keep high-dv/dt drain traces away from the gate trace by at least 2 mm to minimize capacitive coupling.
Do not exceed the VGS absolute maximum of ±20 V. Gate drive voltages above 12 V provide diminishing Rds(on) reduction and increase gate-leakage current. Verify avalanche energy (EAS) when switching inductive loads - the 549 mJ rating assumes unclamped inductive switching at the rated current and is derated with temperature. Always include a TVS diode or snubber across inductive loads that exceed the EAS rating.
コンプライアンス情報
RoHS compliant per onsemi product page. Not AEC-Q100 qualified - for automotive applications, use the NTMFS4C324NT1G-Q1 suffix variant if available, or consult onsemi automotive-grade catalog.
