NTMFS4C324NT1G vs BSC010NE2LSIATMA1 比較
詳細な並列比較: NTMFS4C324NT1G メーカー: onsemi および BSC010NE2LSIATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | NTMFS4C324NT1G | BSC010NE2LSIATMA1 |
|---|---|---|
| ブランド | onsemi | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.42 | $0.92 |
| Manufacturer | onsemi | Infineon Technologies |
| Part Number | NTMFS4C324NT1G | — |
| Technology | TRENCH 6 N-Channel MOSFET | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max value] | — |
| Continuous Drain Current (ID) at Tc | 136 A | — |
| Continuous Drain Current (ID) at Ta | 30 A | — |
| Pulsed Drain Current (IDM) | 352 A | — |
| Rds(on) at VGS=10V | 1.7 mΩ typical | — |
| Single Pulse Avalanche Energy (EAS) | 549 mJ | — |
| Power Dissipation at Ta | 3.1 W | — |
| Power Dissipation at Tc | 64 W | — |
| パッケージ | 5-DFN (5x6 mm), SO-8FL equivalent | PG-TDSON-8-7 (TDSON-8 EP) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | [DATA_NEEDED: Tj max value] | -55C to +150C (TJ) |
| RoHS ステータス | Compliant | Compliant |
| Tape and Reel Quantity | 1500 pcs | — |
| Series / Family | — | OptiMOS 25V |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Configuration | — | Single N-Channel |
| ピン数 | — | 8 |
| Gate Drive | — | Logic-level compatible |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |