NUP3112UPMUTAG - 0.7pF ESD TVS Array 3-Line UDFN-6 | onsemi
部品番号: NUP3112UPMUTAG ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
NUP3112UPMUTAG 概要
An ESD protection / TVS diode array is a circuit-protection device belonging to the broader family of transient voltage suppressors and surge protectors. Its role in the system hierarchy is to sit between external connectors and sensitive silicon, clamping electrostatic discharge (ESD) and surge events before they can damage ICs such as transceivers, controllers, and high-speed line drivers.
The defining feature of this device is its 0.7 pF ultra-low capacitance, which minimizes signal degradation on high-speed data lines where even a few picofarads of loading would degrade eye diagrams and edge rates. The common-anode architecture protects three independent high-speed data lines plus a VCC power line within a single six-lead package, an excellent clamping capability, low leakage current, and fast response time make it well suited to line densities that were previously served by multiple discrete diodes.
According to the onsemi datasheet, the three-line voltage/surge array is designed specifically for voltage-sensitive components that require ultra-low capacitance against ESD and transient voltage events. The integrated architecture reduces board area and BOM count compared with discrete solutions.
Typical applications include USB and other high-speed port protection, portable and battery-powered consumer electronics, and industrial communication interfaces where connector-exposed lines must be defended against IEC-type ESD and surge events.
A key design consideration is that clamping performance depends strongly on board layout: keep the device within a few millimeters of the connector, use short wide ground returns, and route protected lines through the device rather than around it.
This page synthesizes verified distributor data, drop-in replacement analysis, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: NUP3112UPMUTAG — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
NUP3112UPMUT1G
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品(カタログ未掲載)
NUP3112UPMUTAG 仕様
| Product Category | TVS Diodes - Transient Voltage Suppressors / ESD Protection |
| Configuration | 3-line voltage/surge array + VCC line (common anode) |
| チャネル数 | 3 Channels |
| Polarity | Unidirectional |
| Line Capacitance | 0.7 pF (ultra-low) |
| パッケージ | 6-UDFN (1.6 x 1.6 mm) |
| 実装タイプ | Surface Mount |
| Clamping Capability | Excellent clamping capability (per onsemi product page) |
| Leakage Current | Low leakage (per onsemi product page) |
| Response Time | Fast response (per onsemi product page) |
| Application | ESD and surge protection for high-speed data lines and VCC |
| RoHS ステータス | Compliant (RoHS details per distributor listing) |
NUP3112UPMUTAG 6-udfn (1.6 x 1.6 mm) ピン配置ガイド
NUP3112UPMUTAG (6-udfn (1.6 x 1.6 mm) パッケージ) のピン配置。 ピン番号、機能、接続図はメーカーのデータシートで定義されています。正確なフットプリントとはんだ付けのガイドラインについては、データシートを参照してください。
詳細なピン配置データはありません: NUP3112UPMUTAG.
詳細は データシート をご参照ください。
主な用途
NUP3112UPMUTAG の用途: 6 件s: USB Port Protection, Portable and Wearable Consumer Electronics, Industrial Communication Interfaces, Notebook and Tablet I/O Protection, Set-Top Box and Networking Equipment, Automotive Infotainment Accessory Ports.
USB Port Protection
The NUP3112UPMUTAG fits USB port protection because its 0.7 pF ultra-low line capacitance preserves the impedance and edge rates of the D+ and D- high-speed lines, where capacitance above a few picofarads would degrade the eye diagram and limit data-rate margin. In a typical circuit the array sits directly at the USB connector: the three data lines route through the device to the transceiver, the common-anode node ties to the 5V or 3.3V VCC rail, and the device clamps negative ESD strikes to ground and positive strikes to VCC. The VCC line protection in the same 6-UDFN package also shields the upstream power pin, replacing what would otherwise require multiple discrete diodes. Layout matters: place the device within a few millimeters of the connector with short, wide ground returns so surge current bypasses the sensitive transceiver entirely.
おすすめ
Portable and Wearable Consumer Electronics
Smartphones, tablets, earbuds, and wearable devices expose connector pins to repeated human-touch ESD, and the NUP3112UPMUTAG addresses this environment with a combination the application demands: 0.7 pF capacitance for high-speed lines, a 1.6 x 1.6 mm low-profile UDFN footprint that fits dense board real estate, and low leakage that protects battery life. The three-line plus VCC architecture lets a single package cover a connector's data pair and accessory-detect line simultaneously, cutting placement count and associated assembly cost. According to onsemi, the device provides excellent clamping and fast response, which limits residual voltage at the application processor or transceiver during a discharge event. The unidirectional topology is ideal for fixed-polarity rails, and the low profile suits thin mechanical enclosures where taller packaged arrays cannot fit.
おすすめ
Industrial Communication Interfaces
Industrial serial interfaces such as RS-485, CAN, and fieldbus ports are exposed to cable-borne ESD and surge events from long wiring runs and handling. The NUP3112UPMUTAG protects such exposed lines using its common-anode, unidirectional array: data lines route through the 0.7 pF channels to the transceiver while the anode node references the interface supply, clamping transients before they reach the transceiver die. The fast response and excellent clamping capability cited by onsemi are important because industrial transceivers have finite absolute-maximum ratings that the clamp must hold under repetitive events. Its compact 6-UDFN package allows placement directly at the terminal block or connector side of the board, minimizing the stub length between clamp and protected pin. Designers should verify standoff voltage against the interface supply level in the datasheet before finalizing the BOM.
おすすめ
Notebook and Tablet I/O Protection
Notebook and tablet motherboards concentrate multiple external connectors - USB, audio jacks, docking pins - near board edges where ESD exposure is highest. The NUP3112UPMUTAG serves these nodes with 0.7 pF of capacitance, which is critical for USB 2.0 and faster lines whose signal-integrity budgets cannot tolerate conventional TVS capacitance. One 6-UDFN package protects three independent lines plus VCC, so a single device can cover a USB port's data pair plus ID/accessory line, reducing component count relative to a discrete diode solution. The common-anode design ties transient return current to the supply rail, and the low-leakage spec preserves standby power targets important for always-on mobile platforms. Placement at the connector, with a solid local ground path, ensures the clamping path stays low-inductance under multi-kilovolt discharge events.
おすすめ
Set-Top Box and Networking Equipment
Set-top boxes, routers, and switches present multiple ESD-exposed ports in close proximity, and the NUP3112UPMUTAG fits this environment by combining ultra-low 0.7 pF capacitance for high-speed Ethernet or USB auxiliary lines with a compact 1.6 x 1.6 mm UDFN footprint suited to high-density port clustering. The three-channel common-anode array lets designers protect a data pair plus an auxiliary signal or VCC sense line in one package, maintaining matched clamping between lines of the same interface - a benefit for differential signaling where mismatched capacitance converts common-mode energy into differential noise. onsemi's cited fast response time ensures the clamp engages during the initial nanoseconds of an ESD event, when front-end transceiver damage occurs. Keep the device adjacent to each connector and route surge return current through short ground vias.
おすすめ
Automotive Infotainment Accessory Ports
Automotive head units and telematics modules expose USB and auxiliary connectors to service personnel and consumers, making them frequent ESD failure points. The NUP3112UPMUTAG can protect consumer-facing accessory lines in such systems thanks to its 0.7 pF capacitance, which preserves USB signal integrity, and its unidirectional common-anode topology, which clamps strikes referenced to the vehicle's accessory supply rail. The three-line plus VCC architecture protects both data lines and the 5V charging pin of a USB port within one 1.6 x 1.6 mm package, reducing BOM count on a cost-sensitive board. Note that onsemi's data reviewed here does not state AEC-Q100 qualification for this specific part, so for harsh-environment, safety-relevant automotive nodes designers must confirm qualification status in the current onsemi documentation or select a qualified family member.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: NUP3112UPMUTAG — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | NUP3112UPMUT1G |
|---|---|---|
| Package | 6-UDFN (1.6 x 1.6 mm) | 6-UDFN (1.6 x 1.6 mm) - same |
| Brand | onsemi | onsemi |
| Line Capacitance | 0.7 pF | 0.7 pF (same die) |
| Channels / Lines Protected | 3 data lines + VCC | 3 data lines + VCC |
| Polarity | Unidirectional | Unidirectional |
| RoHS | Compliant | Compliant |
| Packing Format | Tape & Reel (MUTAG option) | Tape & Reel (MUT1G reel-quantity option) |
主な差別化要因
- Ultra-low 0.7 pF line capacitance (vs NUP3112UPMUT1G (identical die))
- Integrated three-line plus VCC protection in one package (vs NUP3112UPMUT1G)
- Trade-off: qualification scope (vs Automotive-qualified ESD arrays)
設計ノート
Place the NUP3112UPMUTAG as close to the protected connector as possible - ideally within 5 mm of the connector pins - so the ESD discharge current is diverted before it propagates along the trace. Keep the ground connection short and wide with multiple vias to the ground plane to minimize loop inductance, because even a few nanohenries of series inductance raises the clamping voltage during the fast rising edge of an ESD event. Route protected lines through the device pads rather than teeing off beside it.
The common-anode node must be tied to the VCC rail the protected transceiver operates from, and that rail must be able to absorb the diverted positive surge current - a local decoupling capacitor (for example 1 uF or greater ceramic) near the array helps sink the transient charge. Confirm the rail's reverse standoff capability against the device's VRWM in the datasheet so the array does not conduct in normal operation and add leakage to the supply.
Do not substitute a higher-capacitance TVS array on high-speed lines - capacitance above a few picofarads measurably degrades USB-class eye diagrams, which is exactly why this device specifies 0.7 pF. Also verify the ordering suffix: NUP3112UPMUTAG and NUP3112UPMUT1G differ only in packing format, but other NUP-family variants differ in line count and package and are not pin-compatible. Always pull VBR, VC, and IPP limits from the current onsemi datasheet rather than assuming family values.
コンプライアンス情報
RoHS compliance indicated in distributor specification data (chipdig) for the NUP3112UPMUTAG. REACH, lead-free, halogen-free, and conflict-minerals statuses were not stated in the verified data and remain unknown pending confirmation from onsemi documentation.