NUP3112UPMUTAG - 0.7pF ESD TVS Array 3-Line UDFN-6 | onsemi
料号: NUP3112UPMUTAG ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
NUP3112UPMUTAG 概述
An ESD protection / TVS diode array is a circuit-protection device belonging to the broader family of transient voltage suppressors and surge protectors. Its role in the system hierarchy is to sit between external connectors and sensitive silicon, clamping electrostatic discharge (ESD) and surge events before they can damage ICs such as transceivers, controllers, and high-speed line drivers.
The defining feature of this device is its 0.7 pF ultra-low capacitance, which minimizes signal degradation on high-speed data lines where even a few picofarads of loading would degrade eye diagrams and edge rates. The common-anode architecture protects three independent high-speed data lines plus a VCC power line within a single six-lead package, an excellent clamping capability, low leakage current, and fast response time make it well suited to line densities that were previously served by multiple discrete diodes.
According to the onsemi datasheet, the three-line voltage/surge array is designed specifically for voltage-sensitive components that require ultra-low capacitance against ESD and transient voltage events. The integrated architecture reduces board area and BOM count compared with discrete solutions.
Typical applications include USB and other high-speed port protection, portable and battery-powered consumer electronics, and industrial communication interfaces where connector-exposed lines must be defended against IEC-type ESD and surge events.
A key design consideration is that clamping performance depends strongly on board layout: keep the device within a few millimeters of the connector, use short wide ground returns, and route protected lines through the device rather than around it.
This page synthesizes verified distributor data, drop-in replacement analysis, and practical design notes not found in the manufacturer datasheet.
直接替换替代料: NUP3112UPMUTAG ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比:
NUP3112UPMUT1G
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料(不在目录中)
NUP3112UPMUTAG 规格参数
| Product Category | TVS Diodes - Transient Voltage Suppressors / ESD Protection |
| Configuration | 3-line voltage/surge array + VCC line (common anode) |
| 通道数 | 3 Channels |
| Polarity | Unidirectional |
| Line Capacitance | 0.7 pF (ultra-low) |
| 封装 | 6-UDFN (1.6 x 1.6 mm) |
| 安装类型 | Surface Mount |
| Clamping Capability | Excellent clamping capability (per onsemi product page) |
| Leakage Current | Low leakage (per onsemi product page) |
| Response Time | Fast response (per onsemi product page) |
| Application | ESD and surge protection for high-speed data lines and VCC |
| RoHS 状态 | Compliant (RoHS details per distributor listing) |
NUP3112UPMUTAG 6-udfn (1.6 x 1.6 mm) 引脚配置指南
NUP3112UPMUTAG(6-udfn (1.6 x 1.6 mm) 封装)的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。
暂无详细引脚数据: NUP3112UPMUTAG.
请参阅 数据手册 以查看完整引脚配置。
典型应用
NUP3112UPMUTAG 适用于 6 应用s: USB Port Protection, Portable and Wearable Consumer Electronics, Industrial Communication Interfaces, Notebook and Tablet I/O Protection, Set-Top Box and Networking Equipment, Automotive Infotainment Accessory Ports.
USB Port Protection
The NUP3112UPMUTAG fits USB port protection because its 0.7 pF ultra-low line capacitance preserves the impedance and edge rates of the D+ and D- high-speed lines, where capacitance above a few picofarads would degrade the eye diagram and limit data-rate margin. In a typical circuit the array sits directly at the USB connector: the three data lines route through the device to the transceiver, the common-anode node ties to the 5V or 3.3V VCC rail, and the device clamps negative ESD strikes to ground and positive strikes to VCC. The VCC line protection in the same 6-UDFN package also shields the upstream power pin, replacing what would otherwise require multiple discrete diodes. Layout matters: place the device within a few millimeters of the connector with short, wide ground returns so surge current bypasses the sensitive transceiver entirely.
推荐
Portable and Wearable Consumer Electronics
Smartphones, tablets, earbuds, and wearable devices expose connector pins to repeated human-touch ESD, and the NUP3112UPMUTAG addresses this environment with a combination the application demands: 0.7 pF capacitance for high-speed lines, a 1.6 x 1.6 mm low-profile UDFN footprint that fits dense board real estate, and low leakage that protects battery life. The three-line plus VCC architecture lets a single package cover a connector's data pair and accessory-detect line simultaneously, cutting placement count and associated assembly cost. According to onsemi, the device provides excellent clamping and fast response, which limits residual voltage at the application processor or transceiver during a discharge event. The unidirectional topology is ideal for fixed-polarity rails, and the low profile suits thin mechanical enclosures where taller packaged arrays cannot fit.
推荐
Industrial Communication Interfaces
Industrial serial interfaces such as RS-485, CAN, and fieldbus ports are exposed to cable-borne ESD and surge events from long wiring runs and handling. The NUP3112UPMUTAG protects such exposed lines using its common-anode, unidirectional array: data lines route through the 0.7 pF channels to the transceiver while the anode node references the interface supply, clamping transients before they reach the transceiver die. The fast response and excellent clamping capability cited by onsemi are important because industrial transceivers have finite absolute-maximum ratings that the clamp must hold under repetitive events. Its compact 6-UDFN package allows placement directly at the terminal block or connector side of the board, minimizing the stub length between clamp and protected pin. Designers should verify standoff voltage against the interface supply level in the datasheet before finalizing the BOM.
推荐
Notebook and Tablet I/O Protection
Notebook and tablet motherboards concentrate multiple external connectors - USB, audio jacks, docking pins - near board edges where ESD exposure is highest. The NUP3112UPMUTAG serves these nodes with 0.7 pF of capacitance, which is critical for USB 2.0 and faster lines whose signal-integrity budgets cannot tolerate conventional TVS capacitance. One 6-UDFN package protects three independent lines plus VCC, so a single device can cover a USB port's data pair plus ID/accessory line, reducing component count relative to a discrete diode solution. The common-anode design ties transient return current to the supply rail, and the low-leakage spec preserves standby power targets important for always-on mobile platforms. Placement at the connector, with a solid local ground path, ensures the clamping path stays low-inductance under multi-kilovolt discharge events.
推荐
Set-Top Box and Networking Equipment
Set-top boxes, routers, and switches present multiple ESD-exposed ports in close proximity, and the NUP3112UPMUTAG fits this environment by combining ultra-low 0.7 pF capacitance for high-speed Ethernet or USB auxiliary lines with a compact 1.6 x 1.6 mm UDFN footprint suited to high-density port clustering. The three-channel common-anode array lets designers protect a data pair plus an auxiliary signal or VCC sense line in one package, maintaining matched clamping between lines of the same interface - a benefit for differential signaling where mismatched capacitance converts common-mode energy into differential noise. onsemi's cited fast response time ensures the clamp engages during the initial nanoseconds of an ESD event, when front-end transceiver damage occurs. Keep the device adjacent to each connector and route surge return current through short ground vias.
推荐
Automotive Infotainment Accessory Ports
Automotive head units and telematics modules expose USB and auxiliary connectors to service personnel and consumers, making them frequent ESD failure points. The NUP3112UPMUTAG can protect consumer-facing accessory lines in such systems thanks to its 0.7 pF capacitance, which preserves USB signal integrity, and its unidirectional common-anode topology, which clamps strikes referenced to the vehicle's accessory supply rail. The three-line plus VCC architecture protects both data lines and the 5V charging pin of a USB port within one 1.6 x 1.6 mm package, reducing BOM count on a cost-sensitive board. Note that onsemi's data reviewed here does not state AEC-Q100 qualification for this specific part, so for harsh-environment, safety-relevant automotive nodes designers must confirm qualification status in the current onsemi documentation or select a qualified family member.
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推荐产品汇总
工程参考数据: NUP3112UPMUTAG ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | NUP3112UPMUT1G |
|---|---|---|
| Package | 6-UDFN (1.6 x 1.6 mm) | 6-UDFN (1.6 x 1.6 mm) - same |
| Brand | onsemi | onsemi |
| Line Capacitance | 0.7 pF | 0.7 pF (same die) |
| Channels / Lines Protected | 3 data lines + VCC | 3 data lines + VCC |
| Polarity | Unidirectional | Unidirectional |
| RoHS | Compliant | Compliant |
| Packing Format | Tape & Reel (MUTAG option) | Tape & Reel (MUT1G reel-quantity option) |
关键差异点
- Ultra-low 0.7 pF line capacitance (对比 NUP3112UPMUT1G (identical die))
- Integrated three-line plus VCC protection in one package (对比 NUP3112UPMUT1G)
- Trade-off: qualification scope (对比 Automotive-qualified ESD arrays)
设计说明
Place the NUP3112UPMUTAG as close to the protected connector as possible - ideally within 5 mm of the connector pins - so the ESD discharge current is diverted before it propagates along the trace. Keep the ground connection short and wide with multiple vias to the ground plane to minimize loop inductance, because even a few nanohenries of series inductance raises the clamping voltage during the fast rising edge of an ESD event. Route protected lines through the device pads rather than teeing off beside it.
The common-anode node must be tied to the VCC rail the protected transceiver operates from, and that rail must be able to absorb the diverted positive surge current - a local decoupling capacitor (for example 1 uF or greater ceramic) near the array helps sink the transient charge. Confirm the rail's reverse standoff capability against the device's VRWM in the datasheet so the array does not conduct in normal operation and add leakage to the supply.
Do not substitute a higher-capacitance TVS array on high-speed lines - capacitance above a few picofarads measurably degrades USB-class eye diagrams, which is exactly why this device specifies 0.7 pF. Also verify the ordering suffix: NUP3112UPMUTAG and NUP3112UPMUT1G differ only in packing format, but other NUP-family variants differ in line count and package and are not pin-compatible. Always pull VBR, VC, and IPP limits from the current onsemi datasheet rather than assuming family values.
合规信息
RoHS compliance indicated in distributor specification data (chipdig) for the NUP3112UPMUTAG. REACH, lead-free, halogen-free, and conflict-minerals statuses were not stated in the verified data and remain unknown pending confirmation from onsemi documentation.