NVMFS6B25NLT1G - 100V 24mΩ 33A N-Channel MOSFET | onsemi
部品番号: NVMFS6B25NLT1G ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.63 | $1.63 |
| 10 | $1.42 | $14.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.62 | $620.00 |
NVMFS6B25NLT1G 概要
A power MOSFET is a metal-oxide-semiconductor field-effect transistor optimized for switching and amplifying power signals in electronic circuits. Within the broader taxonomy, the NVMFS6B25NLT1G is a single N-Channel enhancement-mode MOSFET, which itself belongs to the discrete-semiconductor power-MOSFET family and ultimately to the wider class of unipolar transistors. The part is qualified to AEC-Q101, placing it inside the automotive-qualified power MOSFET category, and is offered in the SO-8FL (5x6 mm DFN) package family used widely across synchronous rectification, hot-swap, and load-switching designs.
Key electrical features include a drain-to-source breakdown of 100 V, continuous drain current of 8 A (Ta) and 33 A (Tc), pulsed drain current of approximately 132 A, and power dissipation of 3.6 W at the board surface and 62 W at the case. The gate-source voltage is rated to ±20 V, and the on-resistance is specified at 24 mΩ maximum at VGS = 10 V. The 5-DFN (5x6) 8-SOFL package provides an exposed drain pad for low thermal resistance (θJA on FR4 of about 62 °C/W with 650 mm² 2 oz copper), allowing efficient heat removal in compact PCB layouts.
Internally, the device uses trench MOSFET technology with optimized cell pitch to achieve the 24 mΩ figure while keeping gate charge low for fast turn-on/turn-off transitions. This combination of low QG and low RDS(on) reduces conduction and switching losses simultaneously, which is essential in high-frequency synchronous buck, half-bridge, and full-bridge topologies where dead-time losses dominate efficiency curves.
Typical applications include automotive ECUs, motor control H-bridges, LED lighting drivers, synchronous rectification in DC-DC converters, and battery protection / hot-swap controllers in 12 V, 24 V, and 48 V systems. It is also used as a load switch in industrial PLC and telecom secondary-side switching converters.
When designing with the NVMFS6B25NLT1G, place the gate-driver loop as short as possible and add a 10-100 kΩ gate pull-down to prevent unintended turn-on during VGS transients. The exposed pad must be soldered to a copper pour of at least 650 mm² on FR4 with 2 oz copper to achieve the rated thermal performance; without this, derating is required.
This page synthesizes distributor pricing, automotive-grade drop-in alternatives in the same SO-8FL package, and practical thermal and PCB design notes that go beyond what the manufacturer datasheet alone provides.
ドロップイン代替品: NVMFS6B25NLT1G — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: NVMFS6B25NLT1G （同一形状・フットプリント） — 相違点: Operating Temperature Range, Package, Technology.
クイック比較ツール — 並列比較する代替部品を選択:
NVMFS6B25NLWF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NVMFS6B25NT1G
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
NVMFS6B14NLT1G
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BSC0901NSATMA1
✅ ドロップイン✓ 在庫あり
$0.78 / 個
データシートを見る →SiRA12DP
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NVMFS6B25NLT1G 最大定格＆電気的特性
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 8 A |
| Continuous Drain Current (ID) at TC=25°C | 33 A |
| Drain-to-Source On-Resistance RDS(on) max @ VGS=10V | 24 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V |
| Power Dissipation at TA=25°C | 3.6 W |
| Power Dissipation at TC=25°C | 62 W |
| Series | Automotive, AEC-Q101 |
| パッケージ | 5-DFN (5x6) 8-SOFL, surface mount |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55°C to +175°C |
| RoHS ステータス | Compliant |
NVMFS6B25NLT1G ピン構成
| ピン 1 | Gate — MOSFET gate input; drive voltage 4.5V or 10V to fully enhance |
| ピン 2 | Drain — MOSFET drain; electrically tied to exposed pad |
| ピン 3 | Drain — MOSFET drain; electrically tied to exposed pad |
| ピン 4 | Drain — MOSFET drain; electrically tied to exposed pad |
| ピン 5 | Drain — MOSFET drain; electrically tied to exposed pad |
| ピン 6 | Source — MOSFET source; return path for gate drive |
| ピン 7 | Source — MOSFET source; return path for gate drive |
| ピン 8 | Source — MOSFET source; return path for gate drive |
安全動作領域 (DC)
主な用途
NVMFS6B25NLT1G の用途: 6 件s: Automotive 12V/24V Load Switching, Synchronous Rectification in DC-DC Converters, Motor Drive H-Bridge (Low-Side Switch), Hot-Swap / Inrush Current Limiter, LED Lighting Driver Output Stage, Battery Protection / Battery Management.
Automotive 12V/24V Load Switching
The NVMFS6B25NLT1G's 100V VDS rating and AEC-Q101 qualification make it ideal for automotive 12V/24V load-switching applications including ECU power distribution, lighting drivers, and body control modules. The 24mΩ RDS(on) at 10A load yields roughly 2.4W conduction loss, manageable on the SO-8FL footprint with proper PCB copper. Designers typically place it as a high-side switch driven by a gate driver IC, with a TVS across drain-source for inductive load protection. Unlike larger TO-220 MOSFETs, the SO-8FL allows direct PCB mounting in space-constrained under-hood modules while surviving -40°C to +125°C ambient.
おすすめ
Synchronous Rectification in DC-DC Converters
The NVMFS6B25NLT1G serves as the low-side synchronous rectifier in non-isolated buck converters handling up to roughly 20A continuous load current. Its low gate charge QG (specified by onsemi as optimized for driver-loss minimization) enables switching frequencies of 200-500 kHz with acceptable driver losses. Compared to using a Schottky diode, the synchronous-MOSFET topology improves efficiency by 3-5% at 10A load, particularly in 24V-to-12V and 48V-to-12V telecom/industrial converters. The 5-DFN package footprint allows direct cooling through the bottom thermal pad to inner PCB copper layers.
おすすめ
Motor Drive H-Bridge (Low-Side Switch)
The NVMFS6B25NLT1G functions as the low-side switch in 12V/24V brushed DC motor H-bridges, where the 100V VDS provides ample headroom for inductive flyback transients. Its 33A pulsed current capability supports startup inrush for motors up to roughly 200W mechanical output. The SO-8FL package's low thermal resistance (~62°C/W on FR4 with proper copper) allows sustained 8A operation on the board surface. Designers pair it with onsemi's NCV75xxx gate driver family for shoot-through protection and dead-time insertion, ensuring the MOSFET operates within its safe operating area across all commutation events.
おすすめ
Hot-Swap / Inrush Current Limiter
The NVMFS6B25NLT1G is well suited for hot-swap controllers in 12V, 24V, and 48V backplane systems where it acts as the inrush-limiting series element. The 100V rating and 33A pulsed capability handle the transient stress of capacitor-bank charging on plug-in cards. Its 24mΩ RDS(on) provides acceptable steady-state voltage drop in the fully-enhanced-on state. The automotive AEC-Q101 qualification also makes it attractive for industrial hot-swap designs that demand robust transient performance. Compared to using a smaller logic-level FET, the NVMFS6B25's higher VDS margin protects against board-level ESD and cable-discharge events.
おすすめ
LED Lighting Driver Output Stage
The NVMFS6B25NLT1G is used as the high-side current-source switch in automotive LED headlamp and daytime-running-light drivers. The 100V VDS margin tolerates inductive transients from the wiring harness, while the 33A pulsed rating supports PWM dimming at duty cycles up to 100% for 5A-class LED strings. Its low RDS(on) at 10V VGS minimizes thermal dissipation in the headlamp housing, where ambient temperatures can reach 105°C. The AEC-Q101 qualification plus the wettable-flank option (NVMFS6B25NLWF) make this part a strong fit for OEM automotive exterior lighting designs that require AOI-compatible solder joints.
おすすめ
Battery Protection / Battery Management
The NVMFS6B25NLT1G functions as the charge/discharge control FET in 12V, 24V, and 48V battery management systems including e-scooter, e-bike, and industrial lithium battery packs. Its 100V VDS rating supports multi-cell lithium configurations up to 13S (54.6V max), and its 24mΩ RDS(on) minimizes voltage drop in the discharge path. The AEC-Q101 stress qualification makes it suitable for portable battery packs that must survive drop, vibration, and thermal-shock testing. Designers typically place back-to-back NVMFS6B25 MOSFETs to support true bidirectional blocking for cell-balancing and protection functions.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: NVMFS6B25NLT1G — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | NVMFS6B25NLWF | NVMFS6B25NT1G | NVMFS6B14NLT1G | BSC0901NS | SiRA12DP |
|---|---|---|---|---|---|---|
| Package | 5-DFN (5x6) 8-SOFL | 5-DFN (5x6) 8-SOFL - same | 5-DFN (5x6) 8-SOFL - same | 5-DFN (5x6) 8-SOFL - same | PG-TSDSON-8 (5x6) - same footprint | PowerPAK SO-8 (5x6) - same footprint |
| Brand | onsemi | onsemi | onsemi | onsemi | Infineon | Vishay |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (TC=25°C) | 33 A | 33 A | 33 A | 32 A | 49 A | 60 A |
| RDS(on) max @ VGS=10V | 24 mΩ | 24 mΩ | 24 mΩ | 14 mΩ (lower) | 9 mΩ (lower) | 12 mΩ (lower) |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Wettable Flank Option | No | Yes | No | No | No | No |
| Unit Price (qty 1, as of 2026-10-05) | $1.63 | $1.70 - $1.90 (similar) | $1.50 - $1.65 (similar) | $1.80 - $2.10 (higher) | $2.20 - $2.80 (higher) | $2.40 - $3.00 (higher) |
主な差別化要因
- AEC-Q101 qualified with low QG for high-frequency switching （vs BSC0901NS)
- Same SO-8FL footprint as the wettable-flank NVMFS6B25NLWF （vs NVMFS6B25NLWF)
- Balanced 24mΩ RDS(on) and low QG in the 100V trench MOSFET class （vs SiRA12DP)
設計ノート
Estimated: At continuous ID=8A on TA=25°C FR4 board with 650 mm² 2 oz copper pad, power dissipation is approximately 8A² × 0.024Ω = 1.54W, giving roughly 95°C junction temperature rise above ambient at θJA ≈ 62°C/W. For sustained operation above 5A continuous, expand the copper pour to at least 1000 mm² or add thermal vias to internal copper planes. Without this, junction temperature may exceed the 175°C maximum rating during peak load transients.
Keep the gate-driver loop area (gate-driver IC output → gate resistor → MOSFET gate → source-return → gate-driver ground) under 1 cm² to minimize parasitic inductance and ringing during switching transients. Place a 10-100 kΩ gate pull-down resistor directly between gate and source to prevent unintended turn-on from drain-voltage dv/dt coupling, particularly in half-bridge topologies where the source node is switching. For high-frequency designs above 200 kHz, add a small ferrite bead in series with the gate.
The NVMFS6B25NLT1G has ±20V VGS rating - exceeding this (e.g., from gate-driver misconfiguration or static discharge during handling) destroys the gate oxide permanently. Use a gate-drive clamp or TVS protection if the driver can produce transients above 16V. Also note that RDS(on) is specified at VGS=10V; operation at 4.5V gate drive roughly triples RDS(on) to ~70 mΩ, so logic-level drivers must be verified to deliver full enhancement voltage under all load conditions.
The exposed drain pad on the bottom of the SO-8FL package must be soldered to a copper pour for both electrical and thermal performance. Use an array of thermal vias (typically 9-16 vias, 0.3mm diameter, 1.0mm pitch) under the exposed pad to conduct heat to inner copper layers. For SMT assembly, follow JEDEC J-STD-020 reflow profile with peak temperature ≤ 260°C; the package is MSL-1 rated and does not require pre-bake for sealed-packaged parts.
When used in switching applications above 100 kHz, add a small RC snubber (typically 10Ω + 1nF) across drain-source to dampen ringing caused by the diode-reverse-recovery charge (Qrr) interacting with parasitic inductance. For synchronous rectifier applications, ensure proper dead-time insertion (typically 30-100 ns) between the high-side and low-side FETs to prevent shoot-through, which can rapidly overheat both devices. The 24 mΩ RDS(on) of the NVMFS6B25 makes shoot-through damage particularly likely at high switching frequencies.
コンプライアンス情報
AEC-Q101 automotive-qualified per onsemi datasheet. RoHS and REACH compliant. Lead-free and halogen-free per onsemi materials declaration. Conflict-mineral reporting compliant per onsemi corporate policy.
