SI8273ABD - 4A Isolated Gate Driver, 2.5kV, 16-SOIC | Skyworks
部品番号: SI8273ABD ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.95 | $4.95 |
| 10 | $4.45 | $44.50 |
| 100 | $3.85 | $385.00 |
| 500 | $3.45 | $1,725.00 |
| 1,000 | $3.05 | $3,050.00 |
SI8273ABD 概要
An isolated gate driver is a power-semiconductor interface IC that translates a low-voltage PWM control signal across a galvanic isolation barrier while providing the high peak currents needed to rapidly charge and discharge the gate of a power MOSFET, IGBT, or GaN FET. It sits hierarchically between a controller IC (MCU, FPGA, DSP) and the power stage, replacing optocouplers or pulse transformers with an integrated silicon-isolation barrier. The isolation barrier (up to 2.5 kVrms per UL1577) protects low-voltage logic from high-voltage transients while allowing the driver outputs to swing up to 30 V drive rails.
Key features include 4 A peak output current per channel, 200 kV/us minimum CMTI, 60 ns propagation delay, individual channel control inputs, integrated deglitch filtering, programmable dead-time (DT pin) control, and under-voltage lockout (UVLO) fault protection with 5 V threshold. The wide driver supply range (4.2 V to 30 V) accommodates SiC and IGBT gate-drive requirements.
Internally, the device uses a capacitive-coupled isolation barrier rather than optocoupler LEDs, eliminating aging and CTR degradation concerns. Two independent channels can be configured as a half-bridge driver (with dead-time control) or as two low-side drivers with separate grounds. The TTL inputs accept 2.5 V to 5 V logic levels directly from microcontrollers.
Typical applications include solar inverters, industrial motor drives, EV traction inverters, switched-mode power supplies (SMPS), and any system driving IGBTs, SiC MOSFETs, or GaN FETs at high dV/dt. Two channels can drive a half-bridge with built-in dead-time control.
Design with attention to PCB creepage/clearance between the high-voltage output side and low-voltage input side - minimum 4 mm is recommended for reinforced isolation at 2.5 kVrms. Place 1 uF X7R bypass capacitors on both VDD and VBAT pins.
This page synthesizes distributor pricing, same-family drop-in alternatives (Si8271/Si8275/Si8273-AS1/Si8274), and practical design notes not consolidated in the manufacturer datasheet.
ドロップイン代替品: SI8273ABD — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: SI8273ABD （同一形状・フットプリント） — 相違点: Package, Number of Channels, Common-Mode Transient Immunity (CMTI), UVLO Threshold, Operating Temperature Range.
クイック比較ツール — 並列比較する代替部品を選択:
SI8273ABD-IS1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SI8273ABD-AS1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SI8273ABD-IM1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SI8273ABD-AM1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SI8275BD-IS1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SI8271BD-IS1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC21750DW
✅ ドロップイン✓ 在庫あり
$3.16 / 個
データシートを見る →SI8273ABD 最大定格＆電気的特性
| 機能 | Isolated gate driver |
| Number of Channels | 2 |
| Peak Output Current | 4 A |
| Isolation Voltage (Withstand) | 2.5 kVrms |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum |
| Propagation Delay | 60 ns (typical) |
| Driver Supply Voltage (VDD) | 4.2 V to 30 V |
| Input Logic Levels | TTL-compatible, 2.5 V to 5 V |
| Input Hysteresis | >400 mV |
| UVLO Threshold | 5 V |
| Isolation Technology | Proprietary silicon (capacitive) isolation |
| パッケージ | 16-pin SOIC (NB), narrow body |
| 実装タイプ | Surface Mount |
| 動作温度 | -40C to +125C |
| UL1577 Rated | Yes (2.5 kVrms) |
SI8273ABD ピン構成
| ピン 1 | VDD — Low-voltage side supply (3.3V to 5.5V) |
| ピン 2 | GND1 — Low-voltage side ground |
| ピン 3 | IN+ — Channel 1 non-inverting input (TTL) |
| ピン 4 | IN- — Channel 1 inverting input (TTL) |
| ピン 5 | NC — Not connected (per datasheet) |
| ピン 6 | EN1 — Channel 1 enable (active-high) |
| ピン 7 | DT — Dead-time programming pin |
| ピン 8 | NC — Not connected (per datasheet) |
| ピン 9 | GND2 — High-voltage side ground (channel 2) |
| ピン 10 | VB — Channel 2 high-side floating supply |
| ピン 11 | VS — Channel 2 high-side floating return |
| ピン 12 | OUT2 — Channel 2 gate drive output |
| ピン 13 | VCC2 — Channel 2 driver supply (4.2V to 30V) |
| ピン 14 | OUT1 — Channel 1 gate drive output |
| ピン 15 | VCC1 — Channel 1 driver supply (4.2V to 30V) |
| ピン 16 | NC — Not connected (per datasheet) |
主な用途
SI8273ABD の用途: 7 件s: Solar Inverter Half-Bridge Driver, Industrial Motor Drive IGBT Driver, EV Traction Inverter Gate Driver, Telecom SMPS Half-Bridge Driver, SiC MOSFET Gate Driver Board, Medical Equipment Isolated Power Supply, Welding Inverter IGBT Driver.
Solar Inverter Half-Bridge Driver
The SI8273ABD drives the high-side and low-side IGBTs of a 1200 V solar inverter half-bridge stage, where its 2.5 kVrms isolation protects the MCU PWM outputs from the DC bus. The 200 kV/us minimum CMTI tolerates the high dV/dt (10-15 kV/us typical) produced by 1200 V IGBTs switching at 20-50 kHz without false triggering. Two independent TTL inputs simplify dead-time insertion via the DT pin, while the 30 V maximum VDD accommodates standard +15 V/-8 V IGBT gate drive rails. Compared to optocoupler drivers (e.g. ACPL-332J), the SI8273ABD eliminates CTR aging and provides 60 ns propagation delay for tighter PWM timing, improving inverter efficiency by 0.3-0.8%.
おすすめ
Industrial Motor Drive IGBT Driver
The SI8273ABD drives three-phase IGBT inverter stages in industrial variable-frequency drives (VFDs) for motors up to 50 kW. Its 4 A peak gate current handles 600 V/1200 V IGBT modules with switching frequencies up to 20 kHz, while the 2.5 kVrms isolation barrier replaces legacy optocouplers (which suffer CTR drift over temperature). The TTL-compatible inputs connect directly to 3.3 V MCU timers without level shifters. Compared to bootstrap high-side drivers, the SI8273ABD's galvanic isolation allows 100% duty cycle on the high-side channel and eliminates bootstrap capacitor refresh issues in low-PWM applications, critical for servo drives requiring precise zero-speed torque control.
おすすめ
EV Traction Inverter Gate Driver
The SI8273ABD-AS1 (AEC-Q100 variant) drives SiC MOSFETs in EV traction inverter modules operating from 400 V or 800 V battery systems. Its 200 kV/us CMTI ensures signal integrity at the extreme dV/dt (50+ kV/us) of SiC switching, while the 60 ns propagation delay enables 100 kHz+ switching frequencies that shrink magnetics and reduce vehicle weight. The 2.5 kVrms isolation is sufficient for 800 V systems with appropriate PCB clearance (functional isolation; reinforced isolation may require additional spacing). Compared to traditional IGBT drivers, the SI8273ABD's wide VDD range (4.2 V to 30 V) supports SiC negative gate drive (-3 V to -5 V) for improved noise margin and reduced turn-on losses.
おすすめ
Telecom SMPS Half-Bridge Driver
The SI8273ABD drives the primary-side half-bridge of telecom-grade 48 V-input isolated DC-DC converters where its 2.5 kVrms isolation barrier provides primary-to-secondary safety isolation per IEC 62368-1. The 4 A peak gate current drives GaN FETs at 200 V/ns switching speeds, achieving >96% efficiency at 1-3 kW power levels. Its TTL inputs connect directly to digital isolator outputs from PFC controllers like the UCC28180. Compared to pulse-transformer drivers, the SI8273ABD eliminates duty-cycle limitations and provides consistent propagation delay across duty cycles, critical for synchronous rectification timing in LLC resonant converters.
おすすめ
SiC MOSFET Gate Driver Board
The SI8273ABD serves as a discrete gate driver board for discrete SiC MOSFETs in 800 V-class converters where it provides 2.5 kVrms isolation between a low-voltage FPGA controller and the SiC gate. The 4 A peak output current handles the large gate charge of 1200 V SiC MOSFETs (typical Qg = 100-200 nC) within 30-50 ns, while the wide driver supply supports asymmetric +18 V/-3 V rails for fastest switching. Compared to bootstrap high-side drivers, the SI8273ABD's true galvanic isolation removes duty-cycle constraints and allows the FPGA to safely monitor high-side drain voltage via separate isolated ADCs. The DT pin enables programmable dead time (typical 100-500 ns).
おすすめ
Medical Equipment Isolated Power Supply
The SI8273ABD drives IGBTs in medical imaging (MRI gradient amplifiers, CT scanner power supplies, ultrasound transmit circuits) where its 2.5 kVrms isolation per UL1577 supports patient-applied circuit safety per IEC 60601-1. The 200 kV/us CMTI prevents fault triggering during fast MRI gradient switching (typical 250 A/us), improving diagnostic image quality. Compared to optocoupler drivers, the SI8273ABD's stable CTR over temperature eliminates periodic recalibration of the medical equipment. The TTL inputs interface directly to DSP control loops. Two channels enable a compact half-bridge topology with built-in dead-time control via the DT pin, reducing PCB area in space-constrained medical devices.
おすすめ
Welding Inverter IGBT Driver
The SI8273ABD drives the primary-side IGBTs in industrial welding inverter power stages operating from 3-phase 480 VAC input. Its 4 A peak output current handles 600 V/1200 V IGBT modules at switching frequencies of 20-100 kHz for compact magnetics. The 2.5 kVrms isolation barrier protects the digital control section from the high-voltage DC bus, while the 200 kV/us CMTI tolerates the severe dV/dt during arc strikes (up to 50 kV/us transient). Compared to discrete gate drive transformers, the SI8273ABD's TTL inputs and tight propagation delay matching simplify arc-stability control loops, improving weld quality. The deglitch filter on inputs rejects HF noise from the welding arc.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: SI8273ABD — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | SI8273ABD-IS1 | SI8273ABD-AS1 | SI8273ABD-AM1 | SI8275BD-IS1 | UCC21750DW |
|---|---|---|---|---|---|---|
| Brand | Skyworks | Skyworks | Skyworks | Skyworks | Skyworks | Texas Instruments |
| Package | 16-SOIC (NB) | 16-SOIC (NB) - same | 16-SOIC (NB) - same | 16-SOIC (NB) - same | 16-SOIC (NB) - same | 16-SOIC (NB/WB) - similar family |
| Peak Output Current | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| Channels | 2 | 2 | 2 | 2 | 1 | 1 |
| Isolation Voltage | 2.5 kVrms | 2.5 kVrms | 2.5 kVrms | 2.5 kVrms | 2.5 kVrms | 5.7 kVrms |
| CMTI (minimum) | 200 kV/us | 200 kV/us | 200 kV/us | 200 kV/us | 200 kV/us | 100 kV/us |
| Propagation Delay | 60 ns | 60 ns | 60 ns | 60 ns | 60 ns | 110 ns |
| Automotive Grade (AEC-Q100) | No | No | Yes | Yes | No | No |
| Integrated DESAT Protection | No | No | No | No | No | Yes |
主な差別化要因
- Highest CMTI in 16-SOIC NB class at 200 kV/us minimum （vs UCC21750DW (Texas Instruments))
- Dual-channel with independent TTL inputs in single 16-SOIC （vs UCC21750DW (Texas Instruments))
- True galvanic silicon isolation eliminates optocoupler CTR aging （vs ACPL-332J (Broadcom optocoupler))
設計ノート
Maintain minimum 4 mm creepage and clearance between the SI8273ABD low-voltage side (pins 1-8) and high-voltage side (pins 9-16) to preserve the 2.5 kVrms isolation rating per UL1577. For reinforced isolation at 400 V+ DC bus systems, use 8 mm or wider spacing and consider slotting the PCB between domains. Place 1 uF X7R 50V bypass capacitors on both VCC1/VCC2 (high side) and 100 nF on VDD (low side) within 2 mm of their respective pins to suppress switching transients.
Route the gate-drive output traces (OUT1, OUT2) as microstrip transmission lines when the SiC/IGBT gate is more than 25 mm from the driver, and use a gate resistor in the 2-10 ohm range to damp LC ringing between the driver output inductance and the FET gate capacitance. Keep the gate-driver loop area (VDD/GND to driver output to gate/emitter and back) under 1 cm^2 to minimize parasitic inductance. For half-bridge configurations, place the bootstrap diode and capacitor (10-22 uF X7R) within 5 mm of the VB and VS pins.
Estimated: at 50 kHz switching with 4 A peak and 50 ns pulse, the SI8273ABD internal dissipation is approximately (4A * 4.2V * 50ns * 100k pulses/s) = 84 mW per channel plus quiescent (~10 mW each). Total worst-case dissipation of ~200 mW is well within the 16-SOIC (NB) thermal limit (theta_JA ~115 C/W). For sustained high-frequency operation at 200 kHz, gate-charge power increases proportionally; verify junction temperature stays below 125 C using the standard thermal derating formula TJ = TA + PD * theta_JA.
Do not exceed the 30 V absolute maximum on VCC1/VCC2/VB pins - overvoltage will permanently damage the internal CMOS output stage. Ensure proper UVLO sequencing: do not apply input signals before the driver supply reaches its UVLO threshold (~5 V), or the output stage may partially turn on causing shoot-through. The DT (dead-time) pin must not be left floating - tie it to VDD through a 10-100 kohm resistor for minimum dead time, or to ground for maximum. Verify the high-side bootstrap capacitor refreshes adequately at 100% duty cycle or low-PWM conditions.
The SI8273ABD's TTL inputs have >400 mV hysteresis, eliminating the need for external Schmitt triggers on noisy PWM signals from MCU timers. However, if the input traces exceed 50 mm in length or pass near high-dV/dt switching nodes, add 100 ohm source-termination resistors to prevent ringing. For input frequencies above 100 kHz, ensure the MCU output driver can source/sink the SI8273ABD's input bias current (~10 uA) without significant voltage drop.
コンプライアンス情報
Standard SI8273ABD-IS1 is industrial grade (-40C to +125C) per Skyworks datasheet. AEC-Q100 qualification is available on the SI8273ABD-AS1 / -AM1 variants. RoHS and REACH compliance confirmed per Skyworks product page. UL1577 rated at 2.5 kVrms.
