UCC21750DW - ±10A 5.7kVrms Isolated SiC/IGBT Gate Driver | TI
部品番号: UCC21750DW ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.92 | $4.92 |
| 10 | $4.43 | $44.30 |
| 100 | $3.94 | $394.00 |
| 500 | $3.55 | $1,775.00 |
| 1,000 | $3.16 | $3,160.00 |
UCC21750DW 概要
A gate driver for SiC/IGBT is a galvanically isolated amplifier that translates low-voltage PWM logic from a controller into the high-current, high-voltage drive signals required to switch wide-bandgap power devices. Within the power-conversion hierarchy, it sits between the digital controller (DSP/MCU) and the power stage, providing level shifting, isolation barrier crossing, and protection functions that the controller cannot perform directly. Isolated gate drivers are essential in traction inverters, on-board chargers, industrial motor drives, and solar/string inverters where the low-voltage domain must remain safely isolated from the switching node at hundreds of volts.
Key features include ±10 A peak output drive, 150 V/ns common-mode transient immunity (CMTI), integrated DESAT with programmable threshold, internal Miller clamp, isolated analog output for VCE/VDS or temperature sensing, soft-turn-off during fault, and under-voltage lockout (UVLO) for both primary and secondary sides. The device operates from -40 °C to +125 °C and is offered in a wide-body SOIC-16 (DW) package that meets IEC 60747-17 reinforced isolation standards.
The architecture uses TI's capacitive isolation technology with a SiO2 dielectric barrier, achieving 5.7 kVrms isolation and >100 kV/us CMTI. The driver includes separate source and sink outputs, allowing independent turn-on/turn-off impedance tuning with external gate resistors for EMI and switching-loss optimization. An internal Miller clamp FET prevents parasitic turn-on caused by high dV/dt transients across the gate-drain capacitance of the power switch.
Typical applications include EV traction inverters (SiC MOSFET drive up to 800 V bus), on-board chargers and DC fast chargers, industrial servo and AC drives, solar central/string inverters, and solid-state transformers. The wide UVLO range and reinforced isolation make the UCC21750DW particularly well suited to high-reliability industrial and automotive functional-safety applications.
When designing with this device, place the decoupling capacitors as close as possible to VCC and VEE pins and minimize the gate-driver loop inductance to below 5 nH for clean switching at high dV/dt. Use a DESAT blanking capacitor selected per the datasheet equations to avoid nuisance trips on SiC devices with fast turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet with cross-brand equivalents and AI-search-ready FAQ content.
ドロップイン代替品: UCC21750DW — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: UCC21750DW （同一形状・フットプリント） — 相違点: Package, Isolation Technology, Operating Temperature Range, Number of Channels, Product Type.
クイック比較ツール — 並列比較する代替部品を選択:
UCC21750DW-Q1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC21759DW
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC21750DWR
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
UCC5350SBDR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC21750DW 最大定格＆電気的特性
| Product Type | Single-channel isolated gate driver |
| Target Technology | SiC MOSFET / IGBT |
| Peak Output Current (Source/Sink) | ±10 A |
| Isolation Voltage (RMS) | 5.7 kVrms |
| Isolation Type | Capacitive coupling (reinforced) |
| Maximum DC-Link Operating Voltage | 2121 V |
| Number of Channels | 1 |
| パッケージ | SOIC-16 (DW) wide-body |
| ピン数 | 16 |
| 動作温度範囲 | -40 °C to +125 °C |
| DESAT Short-Circuit Protection | Yes (programmable threshold) |
| Internal Miller Clamp | Yes |
| Isolated Analog Sensing Output | Yes |
| UVLO (Primary + Secondary) | Yes |
| Soft Turn-Off on Fault | Yes |
| RoHS ステータス | Compliant |
| 実装タイプ | Surface Mount |
UCC21750DW ピン構成
| ピン 1 | VDD — Primary-side supply (3 V to 5.5 V) |
| ピン 2 | GND1 — Primary-side ground |
| ピン 3 | IN+ — Non-inverting PWM input |
| ピン 4 | IN- — Inverting PWM input |
| ピン 5 | FLT — Fault output (active low, open drain) |
| ピン 6 | ASC_EN — Analog sense control enable |
| ピン 7 | ASO — Isolated analog sense output |
| ピン 8 | VEE — Secondary-side negative supply |
| ピン 9 | NC — Not connected (per datasheet) |
| ピン 10 | OUTL — Sink output (pull-down gate drive) |
| ピン 11 | OUTH — Source output (pull-up gate drive) |
| ピン 12 | VCC — Secondary-side positive supply |
| ピン 13 | DESAT — DESAT short-circuit detection input |
| ピン 14 | CLAMP — Internal Miller clamp output |
| ピン 15 | GND2 — Secondary-side ground (return for VEE) |
| ピン 16 | NC — Not connected (per datasheet) |
主な用途
UCC21750DW の用途: 7 件s: EV Traction Inverter (SiC MOSFET), On-Board Charger / DC Fast Charger, Industrial Servo and AC Drive, Solar String / Central Inverter, Solid-State Transformer (SST), Industrial Welding Power Supply, Aerospace / Defense Power Conversion.
EV Traction Inverter (SiC MOSFET)
The UCC21750DW drives SiC MOSFETs in 400 V and 800 V EV traction inverters, where its 5.7 kVrms reinforced isolation and high CMTI protect the LV domain from fast-switching HV transients. The ±10 A peak current moves the gate charge of typical 1000 V SiC MOSFETs in tens of nanoseconds, minimizing switching losses. Integrated DESAT detects short-circuit desaturation events in <2 µs, critical for protecting expensive SiC devices. The isolated analog output drives a junction-temperature sense signal back to the MCU without an extra isolator. For automotive qualification, the UCC21750DW-Q1 variant is used in the same SOIC-16 (DW) footprint.
おすすめ
On-Board Charger / DC Fast Charger
In on-board chargers (OBC) and DC fast chargers, the UCC21750DW drives the primary-side IGBTs or SiC MOSFETs in PFC and LLC stages. Its wide-body SOIC-16 (DW) package with >8 mm creepage meets IEC 60747-17 reinforced isolation for 800 V battery systems. The Miller clamp prevents parasitic turn-on caused by high dV/dt at the switching node, a known failure mode in LLC converters. UVLO on both primary and secondary ensures clean startup and prevents SiC body-diode conduction. Designers commonly pair UCC21750DW with SiC MOSFETs from Wolfspeed or Rohm in 6.6 kW to 22 kW OBC topologies.
おすすめ
Industrial Servo and AC Drive
Industrial servo drives and variable-frequency AC drives use the UCC21750DW to switch three-phase IGBT bridges at 400-690 V AC. The 5.7 kVrms isolation barrier satisfies IEC 61800-5-1 reinforced isolation requirements for motor drives, while the integrated DESAT and Miller clamp improve reliability in high dV/dt switching environments. The isolated analog output can feedback IGBT case temperature through a single isolated channel, eliminating a separate digital isolator. At 10 A peak drive current, it comfortably drives 50 A-200 A class IGBT modules with switching frequencies up to 50 kHz.
おすすめ
Solar String / Central Inverter
In 1500 V DC solar inverters, the UCC21750DW drives high-voltage IGBTs or SiC modules in boost and H-bridge stages with reinforced isolation rated for 1500 V DC-link systems. Its 2121 V max DC-link rating provides adequate headroom for transient over-voltages on the DC bus during grid faults. The wide-body SOIC-16 (DW) package with sufficient creepage distance is qualified per IEC 62109 for solar PV converters. The internal Miller clamp and DESAT protection are valuable in 100 kW-350 kW utility-scale string inverters where SiC switching frequencies reach 50-100 kHz.
おすすめ
Solid-State Transformer (SST)
Solid-state transformers use the UCC21750DW to drive SiC MOSFETs in high-frequency isolated DC-DC stages operating at 10-50 kHz switching frequency. The driver's ±10 A peak current enables rapid charging of large SiC gate capacitances, minimizing dead-time and improving efficiency at high frequency. Its wide UVLO range and reinforced isolation are essential when SST modules are stacked in MV grids at 4.8 kV or higher. The integrated Miller clamp is critical because SST topologies expose SiC gates to extremely high dV/dt events during resonant transitions.
おすすめ
Industrial Welding Power Supply
Industrial welding inverters use the UCC21750DW to drive the primary IGBTs of resonant LLC or phase-shift full-bridge stages at 20-100 kHz. The 5.7 kVrms reinforced isolation and high CMTI protect the low-voltage control section from the high dV/dt events that occur during arc ignition and load transients. DESAT short-circuit detection enables the power supply to shut down in microseconds if a short-circuit or arc-stuck condition damages the IGBT, improving operator and equipment safety. Wide operating temperature up to +125 °C supports the enclosed, fan-cooled industrial welding environment.
おすすめ
Aerospace / Defense Power Conversion
In aerospace and defense applications such as 270 V DC/DC converters and actuation power stages, the UCC21750DW drives SiC MOSFETs with its reinforced isolation meeting DO-160 and MIL-STD-704 environmental requirements. The wide operating temperature range and reinforced isolation barrier are mandatory when the converter is exposed to variable-frequency generators and high-voltage transients. The isolated analog output enables isolated temperature feedback for health monitoring - critical in mission-critical aerospace power systems.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: UCC21750DW — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | UCC21750DW-Q1 | UCC21759DW | UCC21750DWR | UCC5350SBDR |
|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | SOIC-16 (DW) | SOIC-16 (DW) - same | SOIC-16 (DW) - same | SOIC-16 (DW) - same | SOIC-16 (DW) - same |
| Peak Output Current | ±10 A | ±10 A | ±10 A | ±10 A | 10 A |
| Isolation Voltage (RMS) | 5.7 kVrms | 5.7 kVrms | 3 kVrms (lower) | 5.7 kVrms | 5 kVrms |
| DESAT Protection | Yes | Yes | Yes | Yes | No |
| Internal Miller Clamp | Yes | Yes | Yes | Yes | No |
| Isolated Analog Sensing | Yes | Yes | Yes | Yes | No |
| Automotive Grade (AEC-Q100) | No | Yes | No | No | No |
主な差別化要因
- Highest isolation rating in TI UCC217xx family （vs UCC21759DW)
- Full feature set: DESAT + Miller clamp + isolated ASC （vs UCC5350SBDR)
- Automotive-qualified drop-in variant （vs UCC21750DW-Q1)
設計ノート
Keep the gate-driver loop (VCC - OUTH/OUTL - gate - source - VEE/GND2) inductance below 5 nH to avoid gate-oscillation and ringing. Place the VCC and VEE decoupling capacitors directly on the corresponding SOIC-16 (DW) pins with short, wide traces. Estimated: with 1 oz copper and 10 mm trace width, plan for 2 oz copper on inner layers beneath the driver to reduce loop inductance. Use a Kelvin source connection (separate trace from gate-source to GND2) for clean switching.
The UCC21750DW dissipates up to ~300 mW at 50 kHz switching with 100 nF gate load. The SOIC-16 (DW) wide-body package has a theta_JA around 75 °C/W on a 4-layer JEDEC board. Estimated: at 1 W dissipation the junction rises ~75 °C above ambient, well within the 150 °C max. In enclosed designs near 100 °C ambient, ensure adequate copper pours on VCC/VEE/GND2 thermal pads and avoid placing the driver directly above hot SiC or IGBT modules.
Set the DESAT blanking time per the datasheet equation CBLANK = tBLANK × IDESAT. A too-short blanking causes nuisance trips on SiC devices with fast turn-on dV/dt. A too-long blanking defeats protection. Use the internal Miller clamp to prevent shoot-through on half-bridge configurations with SiC MOSFETs - do not rely solely on external gate resistors. Verify primary-side and secondary-side UVLO thresholds are compatible with your supply voltages to avoid continuous re-start at low battery conditions.
Maintain at least 8 mm creepage and clearance between primary-side pins (1-7) and secondary-side pins (8-16) of the SOIC-16 (DW) package to preserve reinforced isolation. Do not run any primary-side trace under the package body or under secondary-side pins. Reference the TI user guide SLLA559 for reinforced-isolation PCB layout practices including slotting between domains and avoiding copper fill beneath the isolation barrier.
コンプライアンス情報
RoHS and REACH compliant per TI product page. Standard UCC21750DW is not AEC-Q100 qualified; the UCC21750DW-Q1 variant is AEC-Q100 Grade 1 qualified for automotive. Conflict-minerals compliance per TI policy.
