SI8285CD-IS - 4A Isolated Gate Driver 5kVRMS 16-SOIC | Skyworks
部品番号: SI8285CD-IS ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.12 | $4.12 |
| 10 | $3.71 | $37.10 |
| 100 | $3.05 | $305.00 |
| 500 | $2.62 | $1,310.00 |
| 1,000 | $2.25 | $2,250.00 |
SI8285CD-IS 概要
An isolated gate driver is a semiconductor device that translates low-voltage PWM control signals from a microcontroller or DSP into high-current drive signals referenced to a floating high-voltage rail, while maintaining galvanic isolation between the control side and the power side. The SI8285CD-IS belongs to the gate driver category within power management ICs, itself a subset of isolated interface ICs. The role of the gate driver is to deliver high peak currents (several amps) to charge and discharge the input capacitance of power switches (SiC FETs or IGBTs) rapidly, thereby minimizing switching losses and enabling high-frequency operation.
Key features include integrated system safety feedback through a fault pin, an active-low reset input for clearing fault states, separate pull-up and pull-down output pins for controlling gate rise and fall times independently, and a DESAT-style short-circuit protection suitable for IGBT desaturation detection. The capacitive isolation barrier supports up to 5 kVrms withstand voltage and provides reinforced isolation per relevant safety standards, enabling use in industrial motor drives above 600 V and in traction inverters.
The architecture combines a digital isolator with a high-current buffer stage, where the input side receives differential PWM signals from 3 V to 5 V logic, the capacitive barrier transmits the signal across the isolation, and the output side reconstructs the signal with the high drive strength required by power switches. Typical propagation delay is in the tens of nanoseconds with low channel-to-channel skew, enabling precise timing in half-bridge and full-bridge topologies. Internal undervoltage lockout on both primary and secondary supplies protects the system against low-voltage brownout events.
Typical applications include industrial variable-frequency drives, solar inverters, on-board EV chargers, welding power supplies, and three-phase motor inverters where SiC FETs benefit from the high drive current to achieve rapid switching transitions. The 5 kVrms isolation rating also supports industrial drives operating above 600 V bus voltage.
When designing with this part, ensure the VCC and VDD bypass networks use low-ESR ceramic capacitors placed within a few millimeters of the supply pins. The DESAT pin requires an external blanking capacitor and a high-voltage blocking diode to program the short-circuit detection threshold and blanking time. Always observe the creepage and clearance distances required by the end-equipment safety standard.
ドロップイン代替品: SI8285CD-IS — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: SI8285CD-IS （同一形状・フットプリント） — 相違点: Operating Temperature Range, Package, Product Type.
クイック比較ツール — 並列比較する代替部品を選択:
SI8286CD-IS
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
UCC21750DW
✅ ドロップイン✓ 在庫あり
$3.16 / 個
データシートを見る →UCC21710DW
✅ ドロップイン📋 参考代替品（カタログ未掲載）
ADuM4121ARIZ
✅ ドロップイン📋 参考代替品（カタログ未掲載）
ISO5451PW
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SI8285CD-IS 最大定格＆電気的特性
| Product Type | Isolated Gate Driver |
| Isolation Technology | Capacitive Coupling |
| Isolation Withstand Voltage | 5000 Vrms |
| Number of Channels | 1 |
| Peak Output Current | 4 A |
| 出力構成 | Separate pull-up and pull-down pins |
| Target Switches | SiC FETs, IGBTs, power MOSFETs |
| パッケージ | 16-SOIC (wide-body) |
| 動作温度範囲 | -40C to +125C |
| Fault Feedback | Yes (FAULT pin) |
| Reset Input | Yes (active-low) |
| UVLO | Yes (both sides) |
| Desaturation Protection | Yes (DESAT) |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
| 実装タイプ | Surface Mount |
SI8285CD-IS ピン構成
| ピン 1 | VDDA — Input-side supply, 3 V to 5.5 V (relative to GNDA) |
| ピン 2 | GNDA — Input-side ground |
| ピン 3 | IN+ — Non-inverting PWM input (input side) |
| ピン 4 | IN- — Inverting PWM input (input side) |
| ピン 5 | FAULT — Active-low fault output to controller |
| ピン 6 | RESET — Active-low reset input |
| ピン 7 | DISABLE — Driver disable input |
| ピン 8 | NC — Not connected (per datasheet) |
| ピン 9 | GNDB — Output-side ground (isolated from GNDA) |
| ピン 10 | VOUT_PULLUP — Gate pull-up output (source) |
| ピン 11 | VOUT_PULLDOWN — Gate pull-down output (sink) |
| ピン 12 | V_BS — Bootstrap supply for high-side (NC for low-side use) |
| ピン 13 | VOUT — Gate drive output to gate of power switch |
| ピン 14 | VDDB — Output-side supply (isolated) |
| ピン 15 | DESAT — Desaturation protection sense input |
| ピン 16 | CLAMP — Active Miller clamp (optional) |
主な用途
SI8285CD-IS の用途: 6 件s: Industrial Motor Drives (VFD), Solar String Inverters, SiC FET Drives in HEV/EV Chargers, Welding Power Supplies, Three-Phase UPS / Industrial Inverters, Brushless DC (BLDC) Motor Control.
Industrial Motor Drives (VFD)
The SI8285CD-IS drives the IGBT half-bridge in industrial variable-frequency drives controlling 3-phase induction motors, where its 4 A peak current charges the gate capacitance quickly and the 5 kVrms capacitive isolation withstands the 600 V DC bus. The integrated DESAT short-circuit protection detects IGBT desaturation within microseconds, and the FAULT pin triggers a controller shutdown before the IGBT module is damaged. The active-low RESET input lets the MCU clear the fault after the root cause is resolved, supporting IEC 61800-5-1 drive safety architectures.
おすすめ
Solar String Inverters
In solar string inverters the SI8285CD-IS drives the high-side and low-side IGBTs in a boost converter or full-bridge topology at DC bus voltages up to 600 V. Its 5 kVrms capacitive isolation meets IEC 62109-1 reinforced-isolation requirements between the PV-side power stage and the grid-side control logic. The 4 A peak drive current limits switching losses at the 16-32 kHz switching frequencies typical of residential solar inverters, improving overall conversion efficiency. Separate pull-up and pull-down pins let designers tune the turn-off dV/dt independently to balance EMI and switching loss.
おすすめ
SiC FET Drives in HEV/EV Chargers
The SI8285CD-IS is SiC FET-ready, providing the 18 V gate amplitude and nanosecond-class switching transients required by Wolfspeed and onsemi SiC MOSFETs in on-board EV chargers and PFC totem-pole stages. The 4 A peak current charges a typical 5 nC SiC gate in well under 20 ns, keeping switching losses under 1 percent even at 100 kHz. Reinforced 5 kVrms isolation satisfies the galvanic isolation requirement between the HV battery domain (up to 800 V) and the LV 12 V control CAN bus, supporting ISO 17409 for conductive EV charging.
おすすめ
Welding Power Supplies
Inverter-based welding machines use the SI8285CD-IS to drive the primary-side IGBTs of a high-frequency transformer that steps down rectified mains to deliver hundreds of amps at the welding arc. The high isolation voltage (5 kVrms) protects the MCU control board from transients on the welding output, and the integrated DESAT protects the IGBTs against the short-circuit currents typical of arc strikes. The 4 A peak drive handles the large gate charge of high-current IGBT modules (e.g. 1200 V/600 A), maintaining reliable turn-on even under high temperature.
おすすめ
Three-Phase UPS / Industrial Inverters
The SI8285CD-IS drives the IGBTs of a three-phase uninterruptible power supply inverter, where it isolates the 24 V control domain from the 400-600 V DC bus. Its fast propagation delay supports the high-switching-frequency operation that shrinks the output filter inductors and capacitors. The integrated FAULT feedback to the controller enables rapid shutdown within a single switching cycle, important for UPS systems meeting IEC 62040-1 for grid-tie operation. The wide-body 16-SOIC package provides the required creepage distance for reinforced isolation at 600 V.
おすすめ
Brushless DC (BLDC) Motor Control
For high-voltage 3-phase BLDC motor drives in industrial pumps, fans, and servo systems, the SI8285CD-IS isolates the low-voltage MCU (e.g. PIC32MZ) from the 400 V DC bus while delivering 4 A to each IGBT gate. The DESAT-based short-circuit detection prevents catastrophic IGBT failure during motor stall conditions, a common stress event in industrial servo applications. Separate pull-up and pull-down pins allow independent shoot-through protection timing when driving a half-bridge with discrete IGBTs or SiC FETs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: SI8285CD-IS — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | SI8286CD-IS | UCC21750DW | UCC21710DW | ADuM4121ARIZ | ISO5451PW |
|---|---|---|---|---|---|---|
| Package | 16-SOIC (wide-body) | 16-SOIC (wide-body) - same | 16-SOIC (wide-body) - same | 16-SOIC (wide-body) - same | 16-SOIC (wide-body) - same | 16-SOIC (wide-body) - same |
| Brand | Skyworks Solutions | Skyworks Solutions | Texas Instruments | Texas Instruments | Analog Devices | Texas Instruments |
| Peak Output Current | 4 A | 4 A | 4 A | 4 A | 2 A | 2.5 A |
| Isolation Withstand Voltage | 5000 Vrms | 5000 Vrms | 5700 Vrms | 5700 Vrms | 5000 Vrms | 5700 Vrms |
| Isolation Technology | Capacitive coupling | Capacitive coupling | SiO2 capacitive | SiO2 capacitive | iCoupler (transformer) | SiO2 capacitive |
| DESAT Short-Circuit Protection | Yes | Yes | Yes | Yes | Yes (DESAT equivalent) | Yes |
| FAULT Feedback Pin | Yes (active-low) | Yes | Yes | Yes | Yes | Yes |
| Reset Input | Yes (active-low) | Yes | Yes | No | No | Yes |
| Target Switches | SiC FET, IGBT, MOSFET | SiC FET, IGBT | SiC FET, IGBT | SiC FET, IGBT | IGBT, MOSFET | IGBT |
主な差別化要因
- Capacitive isolation with industry-leading 4 A peak drive in 16-SOIC （vs ISO5451PW)
- Independent source/sink pins allow separate rise/fall tuning （vs ADuM4121ARIZ)
- Same-family Skyworks pin footprint across SI828x （vs UCC21750DW)
設計ノート
Power the input side VDD with a 3.3 V or 5 V supply decoupled by a 1 uF and a 100 nF ceramic capacitor placed within 5 mm of pins 1 and 2. Power the output side VOUT supply (VDDB, pin 14) from an isolated DC-DC converter or bootstrap network referenced to GNDB (pin 9); decouple with 1 uF + 100 nF. The Si828x datasheet specifies a 4 V to 24 V output-side supply range; staying above 13 V ensures adequate gate-drive margin for 18 V SiC FETs. Estimated: total quiescent current draw ~10 mA on each side.
The SI8285CD-IS in 16-SOIC wide-body dissipates 200-500 mW depending on switching frequency and gate charge. With 4 A peak switching 100 kHz on a 100 nC IGBT gate, the gate driver loss is roughly 0.5 W (P = Qg x Vgsw x fsw). The 16-SOIC wide-body has theta_JA of approximately 70-80 C/W. Use thermal vias under the exposed pad (if present) or a copper pour of at least 1 square inch connected to GNDB to keep junction rise under 30 C. Estimate: 0.5 W x 75 C/W = 37.5 C junction rise above ambient.
Place the DESAT blanking capacitor on pin 15 (DESAT) and the high-voltage blocking diode with its anode at the IGBT collector and cathode at the DESAT pin. The blanking time (~3 us typical) prevents false DESAT triggering during IGBT turn-on. Use a 100 pF to 1 nF X7R ceramic for the DESAT capacitor per datasheet equation. Keep the DESAT trace short to avoid capacitive coupling noise pickup. Estimated: blanking time TBLANK = C_DSAT x V_DESAT_TH / I_DESAT.
Do not connect the input-side GNDA (pin 2) and output-side GNDB (pin 9) - they are isolated, and shorting them destroys capacitive isolation. Maintain at least 8 mm creepage distance on the PCB between the input-side copper (pins 1-8) and output-side copper (pins 9-16) to support the 5 kVrms rating in pollution-degree 2 environments per IEC 60664-1. Never leave DESAT floating - if DESAT is not used, tie it to VOUT or to a voltage below the DESAT threshold to prevent nuisance faults.
コンプライアンス情報
Industrial-grade. Not AEC-Q100 qualified - use automotive-grade alternatives for EV traction. RoHS compliant per distributor listings.
