STD10NF10T4 - 100V, 13A N-Ch STripFET II MOSFET | STMicroelectronics
部品番号: STD10NF10T4 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.02 | $10.20 |
| 100 | $0.83 | $83.00 |
| 500 | $0.69 | $345.00 |
| 1,000 | $0.58 | $580.00 |
| 2,500 | $0.49 | $1,225.00 |
STD10NF10T4 概要
A Power MOSFET is the workhorse discrete semiconductor for fast, low-loss switching of DC loads. Within the broader taxonomy, an N-channel enhancement-mode MOSFET sits under power MOSFETs, which themselves are a sub-family of discrete semiconductors. The STD10NF10T4 belongs to STMicroelectronics' STripFET II generation, an evolution of the original STripFET architecture designed for primary-side switching in isolated DC-DC converters used in telecom and computer power supplies.
Key electrical features include a 100 V drain-source breakdown voltage (V(BR)DSS), typical on-resistance of 0.115 Ω at VGS=10 V, continuous drain current of 13 A at Tc, and pulsed drain current of 52 A. Total gate charge (Qg) is approximately 19 nC typical, and the static drain-source on-resistance has a maximum of 0.150 Ω at VGS=10 V. The device is rated for 50 W power dissipation at Tc.
The STripFET II process is designed to minimize Ciss, Coss, and total gate charge, which reduces driver losses and improves light-load efficiency in switched-mode power supplies. Compared with older planar MOSFETs of the same voltage/current class, the STD10NF10T4 enables higher switching frequency operation and reduces the size of the magnetics and output filter needed in a given converter design.
Typical applications include primary-side switching in isolated DC-DC converters for telecom and computer systems, motor control in low-voltage 12 V / 24 V / 48 V automotive and industrial buses, and high-side load switching in power distribution circuits. The 100 V rating provides a comfortable margin for 24 V and 48 V systems while still supporting 12 V battery and PoE loads.
When designing with this part, ensure the gate drive swings fully to 10 V to reach the datasheet Rds(on) - a 4.5 V VGS substantially increases conduction loss. Use a gate resistor (typically 10-100 Ω) to control switching ringing and avoid exceeding the 100 V VDS rating under load-step transients; consider a TVS or snubber for inductive switching.
This page synthesizes distributor stock and pricing, verified drop-in alternatives in the same DPAK footprint, and practical design notes that complement the manufacturer datasheet.
ドロップイン代替品: STD10NF10T4 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
STD10NF10T4-H
✅ ドロップイン📋 参考代替品（カタログ未掲載）
STD10NF10-1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IPD90N10S4L-05
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NTD4906N
✅ ドロップイン📋 参考代替品（カタログ未掲載）
VBE1101M
✅ ドロップイン📋 参考代替品（カタログ未掲載）
DMT10H085LFG
✅ ドロップイン📋 参考代替品（カタログ未掲載）
STD10NF10T4 最大定格＆電気的特性
| Manufacturer | STMicroelectronics |
| Part Number | STD10NF10T4 |
| トランジスタタイプ | N-Channel MOSFET |
| Technology | STripFET II |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 13 A |
| Pulsed Drain Current (IDM) | 52 A |
| On-Resistance RDS(on) typ. at VGS=10V | 0.115 Ω |
| On-Resistance RDS(on) max at VGS=10V | 0.150 Ω |
| Power Dissipation (PD) at Tc | 50 W |
| Total Gate Charge (Qg) typ. | 19 nC |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V to 4 V |
| 動作温度範囲 | -55C to +175C |
| パッケージ | DPAK (TO-252) |
| 実装タイプ | Surface Mount |
STD10NF10T4 ピン構成
| ピン 1 | GATE — Gate control input; drive to 10V for full enhancement |
| ピン 2 | DRAIN — Drain; also connected to the metal tab (pin 4 on some footprints) |
| ピン 3 | SOURCE — Source; reference ground for gate drive |
| ピン 4 (TAB) | DRAIN (TAB) — Metal tab electrically bonded to the drain; serves as thermal pad and primary drain contact |
安全動作領域 (DC)
主な用途
STD10NF10T4 の用途: 6 件s: Primary-Side Switching in Isolated DC-DC Converters, Motor Drive H-Bridges for 12V/24V/48V Systems, High-Side Load Switches in Power Distribution, Synchronous Rectifier on the Secondary Side, Solar Charge Controller and Battery Management, Telecom Hot-Swap Controller Output Stage.
Primary-Side Switching in Isolated DC-DC Converters
The STD10NF10T4 is engineered for primary-side switching in isolated DC-DC converters targeting telecom and computer power supply bus rails, where its 100 V V(BR)DSS provides a comfortable margin on the 48 V telecom bus and on 24 V industrial buses. With a typical RDS(on) of 0.115 Ω and total gate charge of 19 nC, the part balances conduction loss and switching loss for converters in the 50-200 W range. Unlike older planar MOSFETs, the STripFET II cell structure reduces input capacitance and shortens the switching transition, allowing higher frequency operation and smaller magnetics. The 13 A continuous and 52 A pulsed drain current ratings permit primary-side operation under 2:1 step-down ratios without exceeding SOA. Designers typically place the STD10NF10T4 with a 10-22 Ω gate resistor and a 1 nF external gate-source pull-down to prevent false turn-on from the high dV/dt of the high-side transformer's leakage inductance.
おすすめ
Motor Drive H-Bridges for 12V/24V/48V Systems
In low-voltage brushed DC and brushless DC motor drives, the STD10NF10T4 serves as both the high-side and low-side switch in H-bridge configurations on 12 V and 24 V automotive or industrial rails. The 100 V VDS rating gives designers generous margin against regenerative braking transients, which routinely spike to 2-3× the supply voltage when the MOSFET body-diode free-wheels through the bus capacitance. With 13 A continuous and 52 A pulsed current, the part drives mid-power 12 V motors up to ~1 A average without paralleling; pulse handling up to 52 A covers inrush and stall conditions. Its 19 nC typical Qg allows economical gate driving from a single TC4427-class gate driver per half-bridge, which keeps total BOM cost low for cost-sensitive motor-control PCBAs in white goods and small appliances.
おすすめ
High-Side Load Switches in Power Distribution
As a high-side load switch in 12 V, 24 V, and 48 V power distribution units (PDUs), the STD10NF10T4 combines 100 V V(BR)DSS headroom with 13 A continuous current in a small DPAK outline, enabling compact distribution modules. The STripFET II process minimizes Qg to 19 nC, so a single GPIO from an MCU can drive the gate through a small 10 kΩ/100 kΩ resistor divider without needing a dedicated charge pump or pre-driver in light-load scenarios. Designers should note that the typical RDS(on) of 0.115 Ω produces ~1.15 W dissipation at 10 A, which requires a copper pour of 1 square inch or better to keep junction rise below 50C. Compared with P-channel MOSFETs of the same rating, the STD10NF10T4's N-channel layout is well-suited to high-side switching where ground-referenced driving simplifies fault and current-sense design.
おすすめ
Synchronous Rectifier on the Secondary Side
The STD10NF10T4 can serve as a synchronous rectifier on the secondary side of an isolated forward or flyback converter in the 5 V to 24 V output range, replacing a Schottky diode to reduce conduction loss. At 13 A continuous, its typical RDS(on) of 0.115 Ω yields a body conduction drop of roughly 1.5 V at full load - significantly less than a 60-100 V Schottky would deliver at the same current, and increasing the converter's overall efficiency by 1-3 percentage points. The 100 V rating easily absorbs the reflected voltage plus ringing seen from a 24 V primary with a 1:1 turns ratio transformer. Its 19 nC Qg keeps the dead-time short and the body-diode conduction loss minimal when the controller correctly schedules primary and secondary switches, with a 100 ns minimum dead time recommended to avoid shoot-through.
おすすめ
Solar Charge Controller and Battery Management
For 12 V and 24 V solar charge controllers and battery management systems, the STD10NF10T4 serves as a P-channel-replacement high-side disconnect switch, where its 100 V VDS handles the open-circuit voltage of typical 24 V solar arrays with margin. The 13 A continuous current corresponds to ~3 kW peak power at a 24 V battery, and the 0.115 Ω typical RDS(on) yields ~1.7 W dissipation at 13 A. Designers should mount the DPAK on substantial copper to ensure junction temperature stays below the 150C ambient-derating limit and to maximize the lifetime of the MOSFET under sustained battery charging current. In typical Solar MPPT designs the STD10NF10T4 sits between the PV input and the buck converter's input capacitor, switching at 50-100 kHz where its 19 nC Qg keeps switching loss below 0.1 W per cycle.
おすすめ
Telecom Hot-Swap Controller Output Stage
In telecom and server hot-swap controller designs operating from a 48 V bus, the STD10NF10T4 can serve as the in-rush current limiter on the secondary load side after primary protection has engaged, especially for cost-sensitive 12 V and 5 V distribution stages off the 48 V rail. Its 100 V V(BR)DSS gives substantial margin against transients on the 48 V rail, while 13 A continuous and 0.115 Ω RDS(on) handle the full hot-swap load profile at modest conduction loss. With 19 nC Qg, the controller can toggle the gate in tens of nanoseconds, enabling fast fault isolation downstream of a slower primary eFuse. The DPAK footprint is also popular for this role because its tab-down construction simplifies thermal vias to the load-bearing copper pour underneath the part.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: STD10NF10T4 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | STD10NF10T4-H | STD10NF10-1 | IPD90N10S4L-05 | NTD4906N | VBE1101M | DMT10H085LFG |
|---|---|---|---|---|---|---|---|
| Package | DPAK (TO-252) | DPAK (TO-252) - same | IPAK (through-hole) | DPAK (TO-252) - same | DPAK (TO-252) - same | DPAK (TO-252) - same | DPAK (TO-252) - same |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi | VBsemi | Diodes Incorporated |
| V(BR)DSS (V) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous ID (A) | 13 A | 13 A | 13 A | 13 A | 11.5 A | 13 A | 14 A |
| RDS(on) typ. at VGS=10V (Ω) | 0.115 | 0.115 | 0.115 | 0.005 typ (newer tech) | 0.110 typ | 0.080 typ | 0.085 typ |
| Qg typ. (nC) | 19 | 19 | 19 | 29 | 17 | 20 | 21 |
| Technology | STripFET II | STripFET II | STripFET II | Infineon OptiMOS-T | onsemi N-channel TMOS | Trench MOSFET | Diodes DMOS |
| Automotive Grade / PPAP | No (commercial) | Yes (automotive) | No (commercial) | Yes (AEC-Q101) | No (commercial) | No (commercial) | No (commercial) |
主な差別化要因
- STripFET II technology - optimized cell structure minimizes Ciss and total Qg for high-frequency DC-DC use （vs IPD90N10S4L-05 (Infineon OptiMOS-T))
- Higher continuous current rating (13 A) vs mainstream 11.5 A alternatives in same DPAK package （vs NTD4906N (onsemi))
- 100 V VDS rating with 52 A pulsed current handling （vs DMT10H085LFG (Diodes Incorporated))
設計ノート
At continuous 13 A and 0.115 Ω RDS(on), the STD10NF10T4 dissipates approximately 19 W of heat. Estimated: with DPAK thermal resistance of ~50 C/W on a standard 1 oz copper pour, junction temperature rises roughly 950 C above ambient, which exceeds the 175 C rating immediately. A copper-pour heat-spreader of at least 1 square inch (or 1-2 cm² of 2 oz copper) is mandatory; alternatively, mount the part tab-down with multiple thermal vias to a large copper heat-spreader layer underneath. Without thermal mitigation, the part can only deliver a few amps continuously before thermal cutoff or long-term degradation. For high-current stages, consider the IRF540N-class TO-220 footprint adapter or a higher-current DPAK like the IPD90N10S4L-05 which has lower RDS(on).
Place the STD10NF10T4 gate resistor as close to the IC pin as possible (within 3-5 mm) to limit the gate-loop inductance that drives dV/dt-induced ringing. Keep the high-current drain/source loop area small by laying the device flat with the input capacitors directly underneath; the diode formed by the back of the package can cause ringing on a long lead. Use a 100 kΩ gate-to-source pull-down resistor as insurance against floating gate and partially-on operation in hot-swap and paralleled-MOSFET topologies. Differential dV/dt at the drain can couple into the gate via Cgd, so the gate-source capacitor should be sized to keep Miller-induced false turn-on below Vth=4 V under worst-case dV/dt.
Do not drive the STD10NF10T4 with a 3.3 V GPIO directly - RDS(on) roughly doubles at 4.5 V drive compared with 10 V drive, which can more than double conduction loss in a low-voltage supply stage. Do not exceed the 100 V VDS rating under any condition including load-dump transients on automotive 12 V buses (which can spike above 35 V for hundreds of milliseconds); a TVS diode or snubber is mandatory for hot-swap and motor-drive applications. The body diode has a reverse recovery specification; in switching converter applications, the controller's dead-time must exceed Qrr/the reverse recovery time to prevent shoot-through losses. Always check the datasheet's safe operating area (SOA) graph before paralleling or operating in the linear region.
コンプライアンス情報
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified in standard grade - choose STD10NF10T4-H or the Infineon/onsemi options for automotive. Lead-free finish (Matte Tin) per JEDEC J-STD-020. Halogen-free per IEC 61249-2-21. STMicroelectronics complies with Section 1502 of the Dodd-Frank Act on conflict minerals.
