STX83003-AP - 400V NPN High-Voltage Fast Switch BJT | STMicro
部品番号: STX83003-AP ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.52 | $0.52 |
| 10 | $0.42 | $4.20 |
| 100 | $0.31 | $31.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
STX83003-AP 概要
What is a high-voltage fast-switching NPN BJT? It is a bipolar junction transistor whose collector-emitter breakdown voltage (VCEO) is rated at several hundred volts while still providing sub-microsecond fall times, enabling efficient drive of inductive loads such as fluorescent lamp ballasts, deflection circuits, and switching-mode power supply snubbers. Within the transistor hierarchy, this places STX83003-AP as NPN BJT -> bipolar transistor -> discrete semiconductor -> semiconductor device.
Key specifications include a collector-emitter breakdown voltage of 400 V, continuous collector current of 1 A, total power dissipation of 1.5 W in free air, DC current gain (hFE) minimum of 16 at 350 mA / 5 V, and a low VCE saturation characteristic that minimizes conduction loss in switching applications. The TO-92-3 package is the industry-standard through-hole outline, allowing PCB replacement without footprint rework for designers migrating from legacy ZTX or MPSA-style high-voltage transistors.
Architecture-wise, the Multi Epitaxial Planar process delivers narrow dynamic-parameter spread and minimum lot-to-lot spread for reliable operation across production batches. The Cellular Emitter geometry and planar edge termination suppress localized hot-spotting at high dV/dt, supporting a wide RBSOA that is critical when the transistor turns off inductive loads where the collector voltage spikes above the DC rail.
Typical applications include electronic ballasts for fluorescent lighting, switching regulators, high-voltage DC-DC converters, deflection circuits for CRT displays, and general-purpose medium-voltage N power switching where a small-signal BJT such as the 2N5551 lacks voltage headroom. Compared with the surface-mount STN83003 in SOT-223, the STX83003-AP offers a TO-92 through-hole form factor favored by hobbyist, replacement, and through-hole industrial designs.
Designers should observe a maximum junction temperature of 150°C and derate dissipation according to the TO-92 thermal resistance (approximately 200°C/W free air). A small clip-on heatsink or PCB copper thermal relief noticeably improves RBSOA margin in continuous high-voltage switching service. A base-drive resistor of 1 kΩ to 10 kΩ is recommended to control turn-off dV/dt and limit stored base charge.
This page combines distributor pricing, parametric comparison with drop-in equivalents, and design guidance not consolidated in the manufacturer datasheet.
ドロップイン代替品: STX83003-AP — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
STX83003
✅ ドロップイン📋 参考代替品（カタログ未掲載）
STN83003
✅ ドロップイン📋 参考代替品（カタログ未掲載）
ZTX458
✅ ドロップイン📋 参考代替品（カタログ未掲載）
STX83003-AP 最大定格＆電気的特性
| トランジスタタイプ | NPN Bipolar Junction Transistor (BJT) |
| コレクタ-エミッタ間電圧（Vceo） | 400 V |
| Continuous Collector Current (IC) | 1 A |
| Total Power Dissipation (Ptot) | 1.5 W |
| 直流電流利得（hFE）最小 | 16 @ 350 mA, 5 V |
| Junction Temperature (TJ max) | 150 C |
| パッケージ | TO-92-3 (through-hole, Ammo Pack) |
| 実装タイプ | Through Hole |
| Technology | Multi Epitaxial Planar, Cellular Emitter |
| Packaging Code | AP (Ammo Pack tape and reel for through-hole) |
STX83003-AP ピン構成
| ピン 1 | Emitter — Emitter terminal (connected to ground or low side) |
| ピン 2 | Base — Base terminal (current-controlled input) |
| ピン 3 | Collector — Collector terminal (high-voltage switching node) |
安全動作領域 (Forward Bias)
主な用途
STX83003-AP の用途: 6 件s: Electronic Ballasts for Fluorescent Lighting, Switching Regulators and DC-DC Converters, High-Voltage Sensor and Alarm Drive, Deflection Circuits for CRT Displays, Inverter Stages for CCFL Backlights, Automotive Ignition Driver (Legacy 12V Systems).
Electronic Ballasts for Fluorescent Lighting
The STX83003-AP is a textbook driver in 220 V AC electronic ballasts for fluorescent lamps. Its 400 V VCEO comfortably clears the rectified mains peak (~310 V), while the Multi Epitaxial Planar Cellular Emitter structure delivers very high switching speed with a wide Reverse Bias Safe Operating Area, ensuring reliable commutation of the resonant LC tank at every zero-crossing. Placed as the high-side switch in a self-oscillating Royer or half-bridge ballast, the device routinely commutates inductive loads where the collector voltage spikes well above the DC rail. Compared with MOSFET alternatives, the BJT's lack of body diode and inherently rugged turn-off make it a proven ballast workhorse. Heatsink the TO-92 tab to a small clip-on fin to keep junction temperature below 100 C in continuous service.
おすすめ
Switching Regulators and DC-DC Converters
The STX83003-AP fits small switching regulators and DC-DC converters that step down a rectified mains or 300 V DC bus to lower rails. Its 400 V VCEO and 1 A continuous collector current support flyback and forward topologies in sub-30 W adapters, while the very high switching speed enables operation in the 50-100 kHz range without excessive crossover loss. Placed on the primary side as the main switch, it pairs naturally with a small-signal PNP such as the 2N3906 for current-mode control. The TO-92 package eases through-hole prototyping, and the wide RBSOA tolerates the inductive kick of the transformer at turn-off.
おすすめ
High-Voltage Sensor and Alarm Drive
In industrial sensor and alarm drive circuits that operate directly from a 220 V AC rectified rail, the STX83003-AP provides a rugged, low-cost switching element. Its 400 V rating comfortably covers transient surges from inductive alarm loads (sirens, solenoids, indicator lamps), and its 1 A continuous current handles typical alarm sounder and relay coils. Placed between the rectified DC rail and the load with a base resistor driven from a logic-level MCU, the STX83003-AP enables high-voltage load switching without a bulky relay. Use a base series resistor of 4.7 kΩ to 10 kΩ to limit base current and ensure full saturation.
おすすめ
Deflection Circuits for CRT Displays
Although CRT displays are now niche, the STX83003-AP is a recognized deflection-circuit transistor for legacy CRT monitors and televisions. Its 400 V VCEO and wide RBSOA are essential for driving the deflection yoke where the collector voltage rises sharply during horizontal retrace. The Cellular Emitter structure suppresses localized hot-spotting during high dV/dt commutation, and the 1.5 W power rating suits the duty cycle of horizontal output stages in small CRTs. The TO-92 package remains repair-friendly for legacy equipment maintenance; service technicians often substitute modern equivalents for end-of-life deflection transistors.
おすすめ
Inverter Stages for CCFL Backlights
In cold-cathode fluorescent lamp (CCFL) inverter stages for industrial LCD backlights, the STX83003-AP serves as a high-side switch driven by a Royer-class oscillator. The 400 V VCEO handles the high-voltage transformer primary, and the very high switching speed minimizes transformer core loss. Placed in a push-pull configuration with two STX83003-AP devices, the circuit produces the AC waveform needed to strike and run the lamp at several kilovolts. Compared with MOSFET-only inverters, this BJT-based approach offers lower cost and proven ruggedness in legacy designs.
おすすめ
Automotive Ignition Driver (Legacy 12V Systems)
Although not AEC-Q100 qualified, the STX83003-AP can serve as a high-voltage driver in legacy 12 V automotive ignition and trigger circuits where a 400 V blocking transistor switches high-voltage spikes from inductive loads. Its wide RBSOA tolerates the inductive kick of automotive solenoids, and its 1 A continuous collector current is ample for ignition coil driver stages in small engines and industrial equipment. Designers targeting AEC-Q100 automotive applications should select qualified equivalents instead; this STX83003-AP usage is intended for non-automotive 12 V industrial systems.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: STX83003-AP — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | STX83003 | STN83003 | ZTX458 |
|---|---|---|---|---|
| Package | TO-92-3 (through-hole, AP) | TO-92-3 (through-hole, bulk) | SOT-223 (SMD) | E-Line TO-92 (through-hole) |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Diodes Incorporated |
| VCEO (V) | 400 V | 400 V | 400 V | 400 V |
| IC continuous (A) | 1 A | 1 A | 1 A | 0.3 A |
| Ptot (W) | 1.5 W | 1.5 W | 1.6 W | 1 W |
| Pinout (E-B-C) | E-B-C (TO-92 flat face) | E-B-C | B-C-E (SOT-223) | E-B-C |
| Mounting | Through Hole | Through Hole | Surface Mount | Through Hole |
| Packaging Format | Ammo Pack (AP) | Bulk / Bag | Tape & Reel | Bulk / Tape & Reel |
主な差別化要因
- Specifically characterized for high-voltage switching with wide RBSOA （vs ZTX458)
- Through-hole TO-92-3 with European E-B-C pinout （vs STN83003)
- Ammo Pack (AP) tape format for automated insertion （vs STX83003 (bulk))
設計ノート
Estimated: The STX83003-AP in a TO-92-3 package has a typical free-air thermal resistance of approximately 200 C/W. At 1 A continuous collector current with VCE = 5 V, dissipation is ~0.5 W, yielding a junction temperature rise of ~100 C above 25 C ambient - acceptable up to ~85 C ambient. For continuous high-voltage switching above ~0.75 W dissipation, attach a small clip-on heatsink to the TO-92 tab or increase PCB copper thermal relief to keep Tj below 150 C.
When laying out the TO-92-3 footprint, follow the standard E-B-C pin assignment looking at the flat face with leads pointing down: pin 1 (left) = Emitter, pin 2 (center) = Base, pin 3 (right) = Collector. Keep base trace short to minimize parasitic inductance and avoid accidental oscillation in high-gain switching service. Place the base-drive resistor within 5 mm of the base lead and provide a small ceramic bypass (e.g., 100 nF) from base to emitter if the device sees long base leads.
Do not confuse the European TO-92 E-B-C pinout (used by STX83003-AP) with the American TO-92 E-C-B pinout (used by some 2N-series transistors); swapping base and collector will cause failure. Do not exceed VCEO of 400 V - even brief transients above this rating can cause secondary breakdown. The hFE of only 16 means a base current of ~60 mA is needed at 1 A collector current; design the base drive for at least 100 mA to ensure saturation under all temperatures.
Estimated: For ballast and SMPS applications, keep the STX83003-AP switching loop area small to minimize radiated noise. A loop area below 1 cm^2 between collector, transformer primary, and ground return reduces EMI emissions. Place a snubber (e.g., 100 Ω + 470 pF) across the primary winding to clamp inductive spikes within the device's RBSOA and prevent secondary breakdown during turn-off.
コンプライアンス情報
RoHS/REACH compliance not explicitly stated in the verified web data; AEC-Q100 not applicable for this through-hole industrial-grade BJT. Cross-check compliance status against the latest STMicroelectronics product page or contact an authorized distributor.
