TJ50S06M3L - P-Ch 60V 50A 10.3mΩ U-MOSVI MOSFET | Toshiba
部品番号: TJ50S06M3L ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.62 | $16.20 |
| 100 | $1.18 | $118.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.78 | $780.00 |
| 3,000 | $0.65 | $1,950.00 |
TJ50S06M3L 概要
A P-channel MOSFET (P-ch) is a voltage-controlled field-effect transistor in which the channel region between source and drain is formed by inversion of n-type silicon under a negative gate-source voltage. Unlike N-channel MOSFETs (which require a gate drive above the source, often necessitating a charge pump or bootstrap), P-channel MOSFETs simplify high-side switching because their source sits at the load supply rail and a simple pull-down (or logic-low) gate signal turns them on. P-ch devices are commonly used in load switching, reverse-battery protection, motor reverse-braking, and high-side half-bridge or synchronous-rectifier positions where ease of drive outweighs the on-resistance penalty inherent to P-channel silicon.
Key differentiating features of the TJ50S06M3L include Toshiba's U-MOSVI cell structure, which optimizes the trade-off between RDS(on) × Qg figure-of-merit and avalanche ruggedness. The 13.8 mΩ max RDS(on) at VGS = -10 V delivers low conduction loss in 30-40 A continuous-load paths, while the small TO-252-3 footprint allows direct substitution for legacy D-PAK footprints. The part also integrates a body-drain diode for synchronous-rectifier and freewheeling applications.
Typical applications span automotive electronic power steering (EPS), brushless DC (BLDC) motor drivers for HVAC blowers and water pumps, 12 V bidirectional DC-DC converters in mild-hybrid systems, load switches and high-side OR-ing for redundant supplies, and switching voltage regulators. It is also a strong candidate for industrial-aggressive robotics, e-bike controllers, and battery management protection FET positions.
When designing with this device, ensure the gate-source rating of +/-20 V is never exceeded and that adequate thermal copper (>=1 sq. inch of 2 oz pour) is provided under the DPAK+ tab. P-channel parts dissipate heat through the drain tab; do not rely on plastic-only thermal dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: TJ50S06M3L — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
TJ50S06M3L,LXHQ
✅ ドロップイン📋 参考代替品（カタログ未掲載）
TJ50S06M3L(T6L1,NQ
✅ ドロップイン📋 参考代替品（カタログ未掲載）
TJ30S06M3L
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPD90P03P4L-04
✅ ドロップイン📋 参考代替品（カタログ未掲載）
TJ50S06M3L 最大定格＆電気的特性
| Polarity / Channel Type | P-Channel (P-ch) enhancement mode |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID, Tc) | -50 A |
| Continuous Drain Current (ID, Ta) | -50 A |
| Gate-Source Voltage (VGS) | +10 V / -20 V |
| Static Drain-Source On-Resistance RDS(on) (typ.) | 10.3 mΩ at VGS = -10 V |
| Static Drain-Source On-Resistance RDS(on) (max) | 13.8 mΩ at VGS = -10 V |
| Total Power Dissipation (PD, Tc) | 90 W |
| Input Capacitance (Ciss) | 6290 pF |
| 動作接合温度 | -55 °C to +175 °C |
| パッケージ / ケース | DPAK+ (TO-252-3) |
| 実装タイプ | Surface Mount |
| Silicon Technology | Toshiba U-MOSVI |
| Automotive Qualification | AEC-Q101 |
| RoHS ステータス | Compliant |
| Lead-Free / Halogen-Free | Yes |
TJ50S06M3L ピン構成
| ピン 1 | Gate — Gate control terminal; drive to -10V for full enhancement, 0V for off |
| ピン 2 | Drain — Drain terminal; tied to metal tab on package bottom; primary heatsinking surface |
| ピン 3 | Source — Source terminal; P-channel inversion layer forms between Source and Drain when VGS is negative |
安全動作領域 (DC) - TJ50S06M3L
主な用途
TJ50S06M3L の用途: 6 件s: Automotive 12V/24V Motor Driver (HVAC, Water Pump, EPS), High-Side Load Switch and Reverse-Battery Protection, Synchronous Rectifier in 12V-to-1V/3.3V Buck Converters, Battery Management System (BMS) Discharge FET, Switching Voltage Regulator Power Stage, Industrial Robotics and Factory Automation Motor Drive.
Automotive 12V/24V Motor Driver (HVAC, Water Pump, EPS)
The TJ50S06M3L's -60V VDS rating, AEC-Q101 qualification, and -50A continuous drain current make it a strong candidate for automotive brushed and brushless DC motor stages. Its P-channel polarity allows high-side placement of the motor, simplifying gate drive (logic-low turns the motor on and forward) and eliminating the need for a bootstrap supply. The 13.8 mΩ max RDS(on) at VGS = -10V keeps dissipation low across HVAC blower and electric water-pump duty cycles, and the U-MOSVI silicon delivers strong avalanche ruggedness for inductive-load turn-off events. The DPAK+ footprint provides enough thermal copper to absorb sustained 30-40A loads in sealed enclosures. The part meets automotive derating and reliability requirements for underhood and passenger-compartment deployment.
おすすめ
High-Side Load Switch and Reverse-Battery Protection
The TJ50S06M3L is well-suited to high-side load-switch and reverse-battery protection positions in automotive and industrial 12V/24V systems. P-channel placement eliminates the bootstrap or charge-pump required by N-channel high-side switches, simplifying the gate-drive network to a single logic-level signal. At -50A continuous current it can handle full load-shed events on a 20A nominal circuit with substantial transient margin, and its -60V rating tolerates load-dump transients up to ~35V. The 13.8 mΩ RDS(on) limits steady-state voltage drop to roughly 200 mV at 15A, preserving downstream rail regulation. Reverse-battery protection relies on the body-diode blocking reverse polarity until the gate is pulled to V_BAT and the channel conducts forward only.
おすすめ
Synchronous Rectifier in 12V-to-1V/3.3V Buck Converters
P-channel MOSFETs are occasionally preferred as synchronous rectifiers in buck topologies where the high-side switch is also P-channel, allowing a single ground-referenced gate-drive IC to control both devices and eliminating the level-shifter. The TJ50S06M3L's 13.8 mΩ RDS(on) at -10V gate drive delivers competitive conduction loss at 20-40A output current, while its 6290 pF Ciss is modest enough that switching losses remain low at 200-500 kHz switching frequencies. The DPAK+ footprint is the de-facto industry-standard for synchronous-rectifier footprints in point-of-load regulators and VRM stages. Designers must still verify dead-time insertion to prevent shoot-through.
おすすめ
Battery Management System (BMS) Discharge FET
In lithium-ion battery management systems, the TJ50S06M3L serves as a high-side discharge FET that isolates the pack from the load on command. Its -60V rating comfortably covers 12V, 24V, and 36V/48V nominal battery stacks with margin, and the -50A continuous rating supports 20A-30A continuous discharge profiles with substantial transient capability. The AEC-Q101 qualification makes it suitable for EV, e-bike, and energy-storage deployments requiring high reliability. The 13.8 mΩ RDS(on) keeps conduction loss in the discharge path under 10W at 30A continuous, manageable with PCB copper-pour thermal design. Low VGS(th) enables drive directly from a low-side gate driver without level shifting.
おすすめ
Switching Voltage Regulator Power Stage
The TJ50S06M3L is well-matched to switching voltage regulator power stages where -50A peak current, low conduction loss, and AEC-Q101 reliability are required. In boost, buck-boost, and SEPIC topologies, the P-channel high-side switch eliminates bootstrap requirements and reduces driver complexity. The 6290 pF Ciss is appropriate for 100-300 kHz switching frequencies common in automotive-grade regulators, and the -60V VDS rating covers 24V bus systems with substantial transient headroom. The DPAK+ package accepts standard land patterns and reflow profiles, simplifying PCB layout and assembly.
おすすめ
Industrial Robotics and Factory Automation Motor Drive
In industrial 24V brushed and brushless DC motor drives, the TJ50S06M3L's -50A continuous rating and AEC-Q101-equivalent reliability deliver the ruggedness required for factory-floor deployments. P-channel high-side placement simplifies the gate-drive network relative to N-channel designs, reducing BOM cost and PCB area. The 13.8 mΩ RDS(on) minimizes steady-state conduction loss across multi-amp continuous loads, and the DPAK+ package provides a thermally capable footprint for sustained operation at 30-40A. The -60V VDS rating tolerates 24V bus transients including motor-braking back-EMF events when paired with TVS clamping.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: TJ50S06M3L — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | TJ50S06M3L,LXHQ | TJ50S06M3L(T6L1,NQ | TJ30S06M3L | IPD90P03P4L-04 |
|---|---|---|---|---|---|
| Package | DPAK+ (TO-252-3) | DPAK+ (TO-252-3) - same | DPAK+ (TO-252-3) - same | DPAK+ (TO-252-3) - same | DPAK+ (TO-252-3) - same |
| Brand | Toshiba | Toshiba | Toshiba | Toshiba | Infineon |
| Polarity | P-channel | P-channel | P-channel | P-channel | P-channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V | -60 V | -60 V | -30 V (-50%) |
| Continuous Drain Current (ID) | -50 A | -50 A | -50 A | -30 A (-40%) | -90 A (+80%) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
主な差別化要因
- U-MOSVI silicon with strong avalanche ruggedness （vs IPD90P03P4L-04 (Infineon OptiMOS-P))
- 60V VDS gives substantial margin over 30V-class alternatives （vs IPD90P03P4L-04 (-30V VDS))
- AEC-Q101 qualified for automotive safety-critical deployments （vs TJ30S06M3L (lower current rating))
設計ノート
Estimated: At continuous -30 A load and 13.8 mΩ RDS(on), conduction loss is approximately 12.4 W. The DPAK+ package with a 1 sq. inch 2 oz copper pour achieves theta_JA in the 40-50 C/W range, resulting in a junction temperature rise of 500-620 C above ambient — well beyond the 175 C limit. The drain tab MUST be soldered to a copper pour of at least 2-3 sq. inches (preferably inner-layer 2 oz with thermal via array under the tab) to keep Tj below 100 C at 20 A continuous. For -40 A or -50 A continuous loads, forced-air cooling or a heatsink is mandatory.
Lay out the DPAK+ tab as the central thermal anchor with at least 6 thermal vias (0.3 mm drill, 0.5 mm pad) stitching the tab copper to the opposite inner plane. Keep the Source and Drain traces wide (>=3 mm per 10 A) and minimize the high-side loop area to control switching transients. The gate trace should be narrow (0.2-0.4 mm) with a 10-100 Ω gate resistor placed close to the gate pin to dampen parasitic ringing caused by the 6290 pF Ciss and source-lead inductance.
Do not drive the gate above -10 V; the VGS absolute-maximum rating is +10 V / -20 V, and exceeding it will destroy the gate. Do not use a single N-channel gate-driver IC for this P-channel without inverting the logic output. For P-channel turn-off speed, add a pull-up resistor (10-100 kΩ) from gate to source to ensure the device defaults to OFF if the gate driver loses power. Reverse-battery polarity will forward-bias the body diode and conduct — add an input fuse or series reverse-blocking diode if reverse polarity is possible.
コンプライアンス情報
AEC-Q101 qualified (automotive grade, equivalent reliability tier to AEC-Q100 for discrete semiconductors). RoHS compliant and lead-free per Toshiba product page. Halogen-free per Toshiba product disclosure.
