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BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon
The Infineon BSP125H6433XTMA1 is a 600V N-channel small-signal enhancement-mode MOSFET rated at 120 mA continuous drain current and 1.8W power dissipation, housed in a 4-pin (3+tab) PG-SOT223 surface-mount package. It is qualified to AEC-Q101 for automotive applications and ships in Tape & Reel packaging. According to the Infineon datasheet, the device uses a Pb-free lead plating and is fully RoHS compliant. A small-signal power MOSFET is a discrete semiconductor that switches or amplifies low-level currents while remaining compatible with standard surface-mount assembly. In the broader taxonomy it sits under MOSFET -> FET -> discrete semiconductor -> power management. Its role is to provide a controllable conduction path whose on-resistance is set by a gate-source voltage, allowing it to act as a high-side switch, level shifter, or driver element in mixed-signal and automotive subsystems. Key differentiating features include a 600V drain-source breakdown (V(BR)DSS), a 120 mA continuous drain current at TA, and a typical threshold voltage VGS(th) suitable for 5V/10V gate drive. The PG-SOT223-4 package provides a thermal pad tab (pin 4) that doubles as the drain connection, enabling direct heat extraction through PCB copper. The AEC-Q101 qualification plus RoHS and Pb-free plating make this part suited to in-cabin and body-electronics automotive modules. Typical applications include automotive relay replacements, lamp drivers, high-side switches for 12V/24V vehicle body controllers, level shifters in industrial control, and small-signal switching in battery management modules. The high BVDSS of 600V also enables use in offline auxiliary supplies where the device sits on the secondary side. When designing with BSP125H6433XTMA1, route the tab land pattern as the primary thermal path; expect roughly 80-100 C/W RthJA on a 1 square-inch 2oz copper pour. Use a gate-source resistor of 10k-100k to keep the device off during power-up. Source and load should share a small gate series resistor (10-100 ohm) to damp ringing in fast switching edges.
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
The Infineon BSP129H6327XTSA1 is a 240 V N-channel depletion-mode power MOSFET rated at 350 mA continuous drain current and 4.2 ohm maximum on-resistance, housed in a 4-pin (3+Tab) PG-SOT223-4 surface-mount package. It belongs to Infineon's SIPMOS small-power transistor family and is qualified to AEC-Q101, making it suitable for both industrial and automotive environments. The depletion-mode behavior is unusual among small-signal MOSFETs and is essential in constant-current source, active-load, and high-side startup circuits where the device must conduct when VGS = 0. A depletion-mode MOSFET is a field-effect transistor in which the conducting channel is physically present at fabrication and is narrowed by applying a reverse gate-source bias; removing the bias or applying a forward bias widens the channel. This is the opposite of an enhancement-mode MOSFET, which requires a gate bias to create the channel. Depletion-mode devices therefore act as normally-on switches and are commonly used where fail-safe conduction is required or where a bias-free current path must be maintained. The BSP129 sits inside the broader taxonomy: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor device. Its key synonyms in design documents are "normally-on N-MOSFET" and "depletion-mode small-signal transistor." Key features include a 240 V drain-source breakdown voltage, 350 mA continuous ID at TA = 25 C, a maximum on-resistance of 4.2 ohm (some sources list 6 ohm), 1.8 W power dissipation at TA, dv/dt ruggedness, and AEC-Q101 automotive qualification. The 4-pin SOT-223 package provides a thermal pad that doubles as the drain terminal, enabling direct PCB copper heatsinking. Technically, the BSP129 uses Infineon's vertical SIPMOS process, which delivers high breakdown voltage in a small die area. The depletion-mode construction is implemented through precise channel doping rather than gate-oxide engineering, giving the device its characteristic negative-VGS(off) threshold. Because the channel is present at zero bias, designers must consider that the device will conduct in a power-down state if used as a low-side switch. Typical applications include active loads and constant-current sources in linear power supplies, high-side startup bypass paths, automotive ECU bias circuits, e-fuse pre-charge stages, and bias generators for gate-driver ICs. The AEC-Q101 qualification broadens its use into automotive body and lighting modules. Designers should treat the thermal tab (pin 4) as the drain and tie it to a copper pour sized for the expected dissipation. When using the BSP129 as a constant-current source, place the source resistor close to the source pin and add a gate-source resistor to set the operating point; the negative threshold means a small positive VGS can fully enhance the channel and lower RDS(on). This page synthesizes distributor stock and pricing data, drop-in same-package alternatives, and practical bias-circuit design notes that go beyond the manufacturer datasheet narrative.
BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon
The Infineon BSP129H6906XTSA1 is an N-channel depletion-mode MOSFET rated at 240 V VDS, 350 mA continuous drain current (Ta), and 1.8 W power dissipation, packaged in a surface-mount PG-SOT223-4 (SOT-223-3 functional, 4-lead) outline. As a depletion-mode device, the channel is normally ON at VGS = 0 V and is pinched off by applying a sufficiently negative gate-source voltage, making it a true normally-on switch. The maximum on-resistance is 6 Ohms at the rated conditions. A depletion-mode MOSFET (also written depletion MOSFET or D-MOSFET) is a field-effect transistor whose conducting channel exists at zero gate-source bias. Unlike an enhancement-mode MOSFET — the workhorse of switching power supplies where the device must be turned ON by VGS > Vth — a depletion-mode part conducts at VGS = 0 V and is turned OFF by pulling VGS below its negative pinch-off voltage. This unusual characteristic places D-MOSFETs in the broader category of power MOSFETs, which descend from discrete transistors and are used in power management, protection, and analog signal-conditioning sub-circuits. Key features of the BSP129 include 240 V drain-source blocking voltage, 350 mA continuous drain current rating at 25 C ambient, 6 Ohm maximum on-resistance, a depletion-mode normally-on threshold, and integrated gate-source protection Zener diodes for ESD robustness. The PG-SOT223-4 (SOT-223) package provides a drain tab that doubles as a low thermal resistance path to PCB copper, supporting 1.8 W dissipation at TA = 25 C with proper layout. The depletion-mode architecture enables constant-current sources when biased with a source resistor, high-side switches that default to ON during power-up sequencing, and simple active loads. Infineon's vertical DMOS process delivers a robust 240 V rating in the small SOT-223 outline, which is rare for normally-on MOSFETs. Typical applications include power-supply startup power, over-voltage protection clamps, inrush-current limiters, off-line voltage references, constant-current sources, and fail-safe high-side switches. The normally-on behavior is intentionally exploited in these circuits. When designing with the BSP129, bias the gate at 0 V for full conduction, or pull it below the pinch-off voltage (about -2.5 V to -3.5 V typical) to turn the device off. A simple resistor divider from a low-voltage rail generates the negative gate bias in most reference designs. Thermal management requires a copper pour on the drain tab footprint. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on any single manufacturer or distributor listing.
BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon
The Infineon BSP135H6327XTSA1 is a single N-channel depletion-mode small-signal power MOSFET rated for 600 V drain-source voltage, 120 mA continuous drain current, and 1.8 W power dissipation, housed in the industry-standard PG-SOT223-4 surface-mount package with an integrated tab for thermal relief. As a depletion-mode device, the BSP135H6327XTSA1 is normally ON at zero gate-source voltage (VGS = 0 V), allowing it to pass current without a gate drive signal and conduct until a sufficiently negative VGS is applied to pinch off the channel. According to Infineon's product brief, VDS max is 600 V, RDS(on) max is 45 ohm at VGS = 0 V, and ID max is 0.12 A. The SIPMOS (Siemens/Infineon Power MOS) process technology used in the BSP135H6327XTSA1 delivers a robust vertical DMOS structure that handles high off-state blocking voltage in a small outline package. A depletion-mode MOSFET is a special class of field-effect transistor that, unlike the far more common enhancement-mode MOSFET, conducts drain current when VGS = 0 V because the conducting channel exists by default at fabrication. To turn the device OFF, the gate must be pulled below the source by a voltage more negative than the pinch-off voltage (VGS(off)). This behavior places depletion-mode MOSFETs in the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> active semiconductor. They are commonly used as constant-current sources, high-side pass elements in linear regulators, and high-voltage analog switches. Key features of the BSP135H6327XTSA1 include the 600 V VDS rating for offline and 230/400 V mains-coupled applications, a low typical on-resistance in the tens-of-ohms range suited to small-signal switching, and a built-in tab on the SOT-223 package that allows the PCB copper pour to act as a heatsink for the 1.8 W power budget. The depletion-mode normally-ON characteristic eliminates the need for a gate drive bootstrap supply during startup, simplifying high-voltage startup circuits and active discharge paths. The BSP135H6327XTSA1 utilizes Infineon's SIPMOS planar DMOS process with a vertical current flow structure. The die is rated for avalanche energy and is designed to survive the inductive switching transients typical of offline flyback and buck-derived power supplies. The large VDS safety margin (600 V for 230 VAC rectified 325 V buses) provides comfortable derating margin for industrial designs. Typical applications for the BSP135H6327XTSA1 include high-voltage startup circuits in AC-DC flyback converters, constant-current biasing for instrumentation, active discharge circuits in solar inverters, and overvoltage protection clamps. The depletion-mode behavior makes it uniquely suited to circuits that must remain ON until deliberately switched OFF. When designing with the BSP135H6327XTSA1, ensure the gate is biased to a defined potential at all times - an open-gate depletion-mode device will conduct. Use a pull-down resistor from gate to source to define the OFF state and prevent unwanted turn-on in noisy environments. This page synthesizes distributor stock, parametric drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon
The Infineon BSP135H6906XTSA1 is an N-channel depletion-mode power MOSFET rated at 600 V drain-to-source voltage and 120 mA continuous drain current, packaged in a 4-pin (3+tab) SOT-223 surface-mount outline with 1.8 W maximum power dissipation. It is one of the few depletion-mode MOSFETs still in volume production and uses Infineon's SIPMOS technology to deliver normally-on operation without a gate drive, simplifying high-side startup, constant-current biasing, and active clamp circuits. A depletion-mode MOSFET is a field-effect transistor that conducts at zero gate-source voltage because the channel is physically doped to be conductive by default. Applying a negative VGS (for an N-channel device) depletes carriers and pinches the channel off. This is the opposite polarity of the enhancement-mode MOSFETs (NMOS/PMOS) that dominate digital logic, where VGS must exceed a threshold to turn the device on. Depletion parts therefore need no driver, no charge pump, and no bootstrap, and they remain on during power supply startup before any controller IC is alive - which is precisely why they are used as bypass, startup, and reference elements. Key features include a maximum drain-source voltage (VDS) of 600 V, a continuous drain current (ID) of 120 mA at TA=25 C, a maximum on-resistance (RDS(on)) of 45 Ohm at VGS=0 V, and a 1.8 W power rating in the compact SOT-223 (PG-SOT223-4) package with a tab that acts as the drain. The depletion-mode behavior gives it a normally-on characteristic so it can be used as a constant-current source when combined with a source resistor, or as an automatic bypass switch that turns off only when gate bias is applied. The device is built on Infineon's planar SIPMOS process, which is optimized for high-voltage switching and analog depletion operation. Its RDS(on) versus VGS curve is monotonic, allowing analog regulation rather than the binary on/off behavior of standard enhancement MOSFETs. This makes the BSP135 well suited to circuits where predictable analog current is needed without closed-loop control. Typical applications include offline startup bypass in switched-mode power supplies, over-voltage protection clamps, in-rush current limiters, active dummy loads, and offline voltage references. Automotive-grade variants exist with AEC-Q101 qualification, supporting 12 V and 24 V body electronics as well as industrial auxiliary supplies. When designing with the BSP135, remember that it is normally-on: the circuit must tolerate continuous conduction when the system is unpowered, and the gate must be actively pulled below VGS(off) (about -1.5 V to -3.5 V for this part) to switch it off. A simple Zener-resistor network can derive the negative gate bias from the drain. This page synthesizes distributor pricing, SOT-223 drop-in alternatives, and practical depletion-mode design notes that the manufacturer datasheet alone does not provide.
BSP149H6327XTSA1 - 200V N-Ch Depletion-Mode MOSFET | Infineon
The Infineon BSP149H6327XTSA1 is an N-channel depletion-mode Power MOSFET rated at 200 V drain-source voltage and 660 mA continuous drain current in a PG-SOT223-4 surface-mount package. It uses Infineon's SIPMOS technology and is qualified to 1.8 W power dissipation at Ta = 25 C with an on-resistance (RDS(on)) of approximately 1 ohm at the rated gate bias. The depletion-mode characteristic means the device is normally ON at zero gate-source voltage and turns OFF when a sufficiently negative VGS is applied, which is the opposite convention from standard enhancement-mode MOSFETs. Key features include 200 V VDS rating, 660 mA ID continuous, 1.8 W power dissipation, low on-resistance of 1 ohm typical, and integrated gate protection. Because it is a depletion-mode device, it requires a negative gate bias to switch off; this makes it useful in constant-current sources, analog signal switches, and active loads where normally-off behavior cannot be assumed. Designers must apply a VGS of approximately -2.5 V or lower to fully turn the device off, while VGS = 0 V leaves the channel fully open with ID limited only by the load and the on-resistance. Architecturally, the BSP149H6327XTSA1 uses a vertical SIPMOS (Siemens Power MOS) structure with the source, gate, and drain brought out to separate pins, with the tab functioning as the drain connection to maximize thermal conduction to the PCB. The PG-SOT223-4 footprint is one of the most widely used SOT-223 outlines and allows straightforward replacement with both SOT-223-3 and SOT-223-4 variants as long as the pinout matches. Typical applications include constant-current sources, active loads, normally-on power switches, analog multiplexer and signal routing, automotive 12 V/24 V load management (where the depletion-mode behavior simplifies fail-safe circuit design), and solid-state relay front-ends. In audio circuits, depletion-mode devices are occasionally used in source-follower configurations for current sources where the gate can be biased to set ID. A key design consideration is gate-source bias: the gate cannot be left floating, or the device will remain ON. A pull-down or active bias network is required to guarantee a defined off-state. Designers should also respect the safe operating area (SOA) at higher VDS, especially during inductive load switching where avalanche energy must be considered. This page consolidates distributor pricing, drop-in alternatives, and practical design notes that go beyond the datasheet, helping engineers select the right Infineon part for depletion-mode analog and switching applications.
BSP171IATMA1 - P-CH 60V 1.9A SOT-223 MOSFET | Infineon
The Infineon BSP171IATMA1 is a P-channel enhancement-mode power MOSFET rated at -60 V VDS and 1.9 A continuous drain current (Ta), qualified for small-signal and general-purpose switching. The device is housed in a PG-SOT223-4-U01 surface-mount package (3 + tab pinout) and dissipates 1.8 W at TA=25 C, rising to 5 W with 25 C/W thermal management to the tab. The -60 V rating makes it suitable for 24 V industrial buses, USB power-path load switches, and reverse-polarity protection circuits. A P-channel MOSFET (P-FET) is a type of field-effect transistor in which the channel is doped to conduct via holes rather than electrons. P-FETs simplify high-side switching because the gate can be driven relative to ground (no charge pump needed for basic on/off), making them the standard choice for load switches and power-ORing in battery-powered and 12 V/24 V systems. Within the broader hierarchy, P-FETs sit under MOSFETs -> transistors -> discrete semiconductors -> active components. Key features include a low threshold voltage for direct 3.3 V/5 V logic-level gate drive, low on-state resistance per unit area for a SOT-223 footprint, and a thermally efficient tab pin that doubles as a heat-spreader for surface-mount assembly. The 4-pin SOT-223 (3 source/drain pins + tab tied to drain) provides a Kelvin-friendly land pattern with low parasitic source inductance. The BSP171IATMA1 uses Infineon's SIPMOS small-signal process, an industry-proven planar P-channel technology optimized for low gate charge and robust avalanche energy. The combination of -60 V VDS and modest gate charge Qg supports PWM frequencies above 100 kHz in compact DC-DC and motor-driver designs. Typical applications include load switching in USB Type-C power delivery, high-side switches for industrial sensor rails, reverse-battery protection in 12 V/24 V systems, motor-driver H-bridges, and battery management charge/discharge paths. Designers also use it for level shifting and power-ORing between redundant supplies. When designing with this device, gate-drive resistor selection (typ. 100 ohm) and gate-source pull-down (typ. 100 kohm) prevent unwanted turn-on during supply transients. The SOT-223 tab must be soldered to a copper pad of at least 50 mm^2 to stay within the 1.8 W Ta rating. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon
The Infineon BSP295H6327XTSA1 is an N-channel enhancement-mode power MOSFET rated at 60 V drain-source voltage and 1.8 A continuous drain current (Ta), housed in a surface-mount PG-SOT223-4 (3 leads + tab) package. It dissipates 1.8 W at Ta=25 °C on the recommended 40×40×1.5 mm FR4 test PCB and is qualified to AEC-Q101 for automotive use. The suffix "H6327" denotes a 7-inch tape-and-reel packing code; the underlying die is the BSP295 family small-signal/small-power MOSFET. What is a small-signal N-channel MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that uses an insulated gate to modulate current flow between drain and source. Small-signal/small-power MOSFETs sit in the discrete semiconductor hierarchy between digital transistors (used for logic-level switching) and high-power MOSFETs (used in motor drives and converters). The N-channel variant conducts when the gate is pulled above the source by the threshold voltage, offering low on-resistance and fast switching for loads up to a few amps. Key features of the BSP295 include a maximum drain-source on-resistance RDS(on) of 300 mΩ, a logic-compatible gate threshold suitable for 4 V drive, and a single N-channel construction optimized for low-side switching. The SOT-223 package provides a drain-tab thermal pad that, when soldered to sufficient copper area, yields a junction-to-ambient thermal resistance suitable for the 1.8 W dissipation class. The device is built on Infineon's planar cell process and qualified to AEC-Q101, making it suitable for load switching, level shifting, and DC-DC conversion in 12 V and 24 V automotive environments. Compared to bipolar transistors, it requires only a small gate charge for switching, reducing driver losses in PWM applications. Typical applications include automotive relay replacement, LED driver low-side switches, high-side/Low-side buck converter switches in DC-DC modules, and general-purpose power management. The 60 V rating provides margin above 12 V and 24 V automotive transients. When designing with this part, observe the SOA curve at high drain currents, since the 300 mΩ RDS(on) produces roughly 1 W at 1.8 A. Provide at least 6 cm² of copper on the drain tab for the rated 1.8 W dissipation, and add a gate-series resistor of 10-100 Ω to damp ringing. This page synthesizes distributor pricing, drop-in equivalents in the same SOT-223 footprint, and practical design notes not assembled on any single distributor page.
BSP296NH6327XTSA1 - 100V N-Ch MOSFET, 1.2A, SOT-223 | Infineon
The Infineon BSP296NH6327XTSA1 is an N-Channel small-signal/small-power MOSFET rated for 100 V VDS and 1.2 A continuous drain current (Ta) in a 4-pin (3+tab) PG-SOT223-4 surface-mount package. As a member of Infineon's OptiMOS-equivalent small-signal family, it is qualified to AEC-Q101 for automotive use and is supplied on Tape & Reel with 1,000-piece standard packaging. The part is optimized as a low-loss, high-speed switch for general-purpose power management. An N-Channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate-source voltage exceeds the threshold. Small-signal/small-power MOSFETs sit in the discrete-semiconductor hierarchy below power MOSFETs and are typically used for loads up to a few amps, where their low gate charge and fast switching edges enable efficient DC-DC conversion, level shifting, and high-side/low-side switching in compact surface-mount designs. Key electrical features include a 100 V drain-source breakdown rating, 1.2 A continuous drain current at 25 °C ambient, and a maximum on-resistance of 600 mΩ. The device dissipates up to 1.8 W at Ta=25 °C with a standard 1 oz copper pad, and its SOT-223 footprint provides a usable drain tab for thermal relief. The gate is standard threshold-level driven, allowing direct interface with 5 V microcontrollers and standard logic-level gate drivers without pre-driver circuitry. The BSP296N die uses an optimized trench cell geometry that minimizes RDS(on) * gate-charge figure-of-merit, balancing conduction loss and switching loss for sub-2 A loads. Its AEC-Q101 automotive qualification covers temperature range, humidity bias, and power-cycling stress, making it suitable for under-hood and chassis applications as well as industrial 24 V bus switching where 100 V drain headroom protects against inductive transients. Typical applications include relay and solenoid replacement in automotive body modules, DC-DC converter high-side switches, motor-driver bridges for small fans and pumps, load switches in industrial 24 V PLC systems, and LED driver stages. The 100 V rating also supports offline-derived auxiliary rails up to 60 V continuous and provides ample margin for flyback converter primary switching. When designing with this device, ensure the gate is driven fully enhanced (10 V recommended for lowest RDS(on)) and use a pull-down resistor to prevent unwanted turn-on during MCU reset. A gate-series resistor of 10-100 Ω controls ringing and limits inrush dV/dt. For thermal reliability at 1 A continuous load, allocate at least 100 mm² of 1 oz copper on the drain tab. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not found in the Infineon datasheet alone, accelerating part selection and PCB layout for new designs.
BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon
The Infineon BSP315PH6327XTSA1 is a P-channel enhancement-mode power MOSFET built on Infineon's OptiMOS process, rated for -60 V drain-source voltage and -1.17 A continuous drain current, housed in a PG-SOT223-4 surface-mount package. Designed for low-voltage load switching and small-signal power management, the device delivers an on-state resistance in the single-ohm range at -10 V gate drive, making it efficient for battery-powered and USB-rail applications. The part dissipates 1.8 W at the package ambient temperature limit and supports surface-mount assembly on standard FR4 boards. A P-channel MOSFET is a field-effect transistor in which the conducting channel forms when a negative gate-source voltage is applied, allowing the device to source current from a positive supply rail to a load referenced to ground without requiring a charge pump or high-side driver. P-channel MOSFETs sit within the broader hierarchy of MOSFETs -> transistors -> discrete semiconductors -> active components. They are widely used as high-side switches because their gate can be driven directly from a logic-level signal pulled to ground, simplifying bootstrap and level-shifting circuitry that would otherwise be required for an N-channel high-side switch. Key features of the BSP315PH6327XTSA1 include a low threshold voltage suitable for direct 3.3 V and 5 V logic-level gate drive, low gate charge for fast switching transitions, an avalanche-rated body diode for inductive loads, and RoHS-compliant lead-free PG-SOT223-4 packaging with an exposed drain tab for improved thermal dissipation. The OptiMOS process delivers a strong figure-of-merit (RDS(on) x Qg) that minimizes conduction and switching losses simultaneously. Technically, the device uses Infineon's planar-cell OptiMOS P-channel technology, which combines a low on-state resistance per unit area with tight parametric distribution for parallel-operation stability. The PG-SOT223-4 footprint exposes the drain tab, allowing the PCB copper pour itself to act as a heatsink and providing a thermal path to the load-side copper. Typical applications include USB power switching, load management in battery-powered portable electronics, high-side switching in industrial control modules, motor and solenoid reverse-polarity protection, and DC-DC converter synchronous rectifier stages. The wide -60 V rating provides substantial headroom for 12 V and 24 V automotive bus transients. When designing with this part, ensure that the gate-source voltage does not exceed the ±20 V maximum rating and add a gate-source pull-down resistor to hold the MOSFET off during MCU reset. For switching inductive loads, place a TVS diode or freewheeling clamp across the load to limit drain-voltage spikes within the avalanche rating. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
The Infineon BSP316PH6327XTSA1 is a P-Channel enhancement-mode Power MOSFET rated at -100 V VDS and -680 mA continuous drain current (at TA=25C), with a maximum power dissipation of 1.8 W (TA) housed in a surface-mount PG-SOT223-4 (TO-261-4) package. Built on Infineon's proven SIPMOS small-signal MOSFET process, it is designed for use as a high-side or low-side load switch in 48 V telecom rails, industrial automation, and battery-protection circuits where a low on-resistance P-channel device simplifies gate drive by referencing the source to the load rather than ground. A P-channel MOSFET (P-FET) is a type of metal-oxide-semiconductor field-effect transistor whose conducting channel is formed by p-type dopants, so the device turns on when the gate is pulled below the source. In the MOSFET taxonomy (MOSFET -> transistor -> discrete semiconductor -> semiconductor), P-FETs are the complementary counterpart to N-FETs and are preferred for high-side switching because they require only a ground-referenced gate driver, eliminating the need for a charge pump or bootstrap circuit. The BSP316P belongs to Infineon's OptiMOS-compatible SIPMOS family, optimized for low gate charge and robust avalanche energy. Key specifications include a typical on-resistance in the single-digit ohm range at VGS=-10V, a gate threshold voltage compatible with 3.3 V and 5 V logic-level drive, and an avalanche-rated single-pulse body diode. The SOT-223 (TO-261-4) footprint provides a center drain tab that doubles as a thermal pad, supporting 1.8 W dissipation when the tab is soldered to at least 100 mm^2 of 2 oz copper pour. This makes the part suitable for space-constrained designs that still need reasonable continuous-current handling. Typical applications include reverse-polarity protection in industrial controllers, high-side load switching in 24 V and 48 V systems, USB power-distribution switches, and battery-discharge control in handheld instruments. The -100 V rating also gives significant transient headroom above nominal 48 V rails, allowing the device to survive inductive kick and lightning-induced surge events within its avalanche rating. When designing with this device, ensure the gate is actively pulled to the source potential during shutdown to prevent accidental turn-on from Miller coupling, and verify that the PCB thermal pad is soldered to a copper area sized to keep the junction below 150 C at the worst-case ambient. The H6327 suffix indicates Tape-and-Reel packaging with 1,000-piece reels per EIA-481. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSP320SL6327 - 60V N-Channel MOSFET | Infineon
The Infineon BSP320SL6327 is a 60 V N-channel power MOSFET with a listed 2.9 A drain current, 0.12 ohm on-resistance, and a 1.8 W maximum power dissipation in a surface-mount SOT-223 package. The device is identified as a single MOSFET with a built-in diode and metal-oxide semiconductor field-effect transistor technology. These ratings make it a candidate for low-voltage switching, load-control, and industrial-control circuits where a 60 V drain rating provides useful transient margin. A MOSFET is a voltage-controlled semiconductor switch. An N-channel MOSFET is especially useful in low-side switching because its low-side gate-drive arrangement can provide efficient conduction and straightforward logic control. In the broader hierarchy, this device belongs to discrete semiconductors, then transistors, then MOSFETs. Its built-in body diode can provide a controlled reverse-current path in inductive or half-bridge circuits, subject to the application-specific switching and recovery requirements. The key verified characteristics are its 60 V operating voltage, 2.9 A specified drain current, 0.12 ohm maximum drain-source on-resistance, and 1.8 W absolute maximum power dissipation. The listed package is a four-pin SOT-223 configuration with three leads plus a tab. The web references also identify avalanche capability and specify metal-oxide semiconductor technology. Detailed gate charge, threshold voltage, junction-temperature limits, and thermal-resistance values are not present in the supplied data and should be confirmed from the manufacturer datasheet before design release. Typical uses include low-side motor and relay drivers, 60 V industrial control interfaces, DC power-conversion stages, and auxiliary switching circuits. The tab provides the electrical drain connection and also acts as a heat-spreading land when the PCB is designed correctly. Gate drive, source return, copper area, and thermal performance remain central design considerations. For a new design, place the device close to its switching load, provide a low-impedance gate resistor, and keep high-current source and drain paths compact. Do not treat the 2.9 A rating as independent of package temperature or PCB copper. Verify the exact thermal conditions and repetitive-pulse limits from the manufacturer datasheet. This page combines verified distributor and manufacturer-linked technical data, application guidance, design notes, and a transparent data-quality review. It does not invent missing electrical limits, pricing, lifecycle assumptions, or cross-brand equivalents.
BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon
The Infineon BSP88H6327XTSA1 is an N-channel SIPMOS small-signal enhancement-mode MOSFET rated at 240 V drain-source voltage and 350 mA continuous drain current, housed in a 3-pin surface-mount PG-SOT223-4 (also described as SOT-223-3) package with 1.8 W power dissipation at Ta=25 C. The device is qualified to AEC-Q101 for automotive use, ships with Pb-free lead plating, and is fully RoHS compliant, making it suitable for both automotive and industrial switching loads. An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switch where a positive gate-source voltage VGS creates a conducting channel between drain and source. Small-signal MOSFETs in the BSP family are optimized for low-current switching and level-shifting rather than power conversion, sitting below power MOSFETs in the discrete semiconductor hierarchy: MOSFET -> small-signal transistor -> discrete semiconductor -> semiconductor. Key electrical features include a typical on-state resistance of approximately 6 ohms at VGS=10 V, a logic-level capable gate threshold typically in the 1 V to 2 V range, and a thermally efficient SOT-223 tab that doubles as the drain connection. Compared with DPAK alternatives, the SOT-223 footprint allows hand-solderable assembly while still dissipating up to 1.8 W on a modest copper area. The device uses Infineon's SIPMOS planar cell technology, providing fast switching, low gate charge, and excellent ruggedness against avalanche transients. The integrated body diode simplifies inductive load driving without external freewheeling components in low-frequency applications. Typical applications include automotive relay replacement, low-side switches for indicator lamps and solenoids, level shifters between 3.3 V microcontrollers and 12 V or 24 V loads, and generic line-side switching in industrial control. It is a popular alternative to bipolar Darlingtons in 12 V automotive subsystems because it does not require continuous base current and therefore reduces quiescent draw. When designing with this part, place a 100 ohm gate series resistor to dampen ringing and protect the microcontroller GPIO from inrush current, and ensure the SOT-223 tab is soldered to at least 6 cm squared of copper on the PCB to keep the junction within the 150 C maximum rating at full 1.8 W dissipation. This page synthesizes distributor pricing, qualified drop-in alternatives, and practical design notes drawn from the Infineon BSP88 datasheet, providing engineering context that goes beyond the bare parametric table.
BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon
The Infineon BSP89H6327XTSA1 is a SIPMOS small-signal N-Channel enhancement-mode MOSFET rated at 240 V drain-source breakdown voltage and 0.35 A continuous drain current (Ta=25°C), housed in a 4-pin PG-SOT223 surface-mount package with an exposed thermal tab. It features a logic-level gate drive (VGS(th) in the low-volt range) and a typical on-resistance of 6 Ω, making it suitable for low-current switching at high voltages where a small signal MOSFET is needed. What is a SIPMOS small-signal MOSFET? A SIPMOS (Siemens/Infineon Power MOS) small-signal MOSFET is a single-transistor power MOSFET built on Infineon's planar SIPMOS process, optimized for low-current switching applications (typically under 1 A). It belongs to the broader category of N-Channel enhancement-mode MOSFETs -> power MOSFETs -> discrete semiconductors. The 'small-signal' designation means it trades off high-current handling for compactness, low gate charge, and easy logic-level drive. This class of device is commonly used as a high-side switch, level shifter, or driver for relays and optocouplers in industrial and automotive control circuits. Key features of the BSP89 include a 240 V V(BR)DSS rating, logic-level VGS(th) for direct microcontroller interface, avalanche-rated single-pulse body diode, and an integrated drain tab for improved thermal dissipation. The PG-SOT223 package provides a thermal resistance (RthJA) of 70 K/W on a 6 cm² cooling footprint, enabling 1.8 W power dissipation on standard FR4 PCB. The 'H6327' ordering code indicates 1000-piece tape-and-reel packaging and AEC-Q101 automotive qualification, making the part suitable for both industrial and automotive-grade designs. The device uses Infineon's mature SIPMOS planar cell technology, delivering robust dv/dt immunity and stable threshold voltage across the -55 °C to +150 °C junction temperature range. The internal Zener between gate and source protects against ESD events up to typical HBM levels. Typical applications include high-side switches in 24 V industrial bus systems, relay and solenoid drivers in automotive body electronics, LED driver stages, and interface level shifters between 3.3 V microcontrollers and 24 V/48 V loads. The 240 V rating also makes it a candidate for offline power supply auxiliary circuits and small motor control. When designing with this part, observe the maximum continuous drain current of 0.35 A and derate appropriately at elevated ambient temperatures. The exposed tab (pin 4) must be soldered to a sufficient copper area to keep junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives (same-brand Infineon SIPMOS family), and practical design notes not found in the manufacturer datasheet.
BSP92PH6327XTSA1 - P-Channel 250V 260mA MOSFET SOT-223 | Infineon
The Infineon BSP92PH6327XTSA1 is a P-channel enhancement-mode power MOSFET rated for -250 V drain-source voltage and -260 mA continuous drain current, dissipating up to 1.8 W in the surface-mount PG-SOT223-4 (SOT-223-4) package. It belongs to Infineon's OptiMOS small-signal P-channel family, targeting high-side switching where a low-side gate reference is preferred. A P-channel MOSFET (PMOS) is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by holes rather than electrons. It sits in the broader hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor -> active electronic component. P-channel devices are commonly used for high-side load switching because their source sits at the load supply rail, allowing the gate to be driven relative to ground with a simple logic-level signal and no bootstrap circuit. Key specifications include a gate threshold voltage typically in the -1 V to -2.5 V range, very low gate charge suitable for direct microcontroller GPIO drive, and an avalanche-rated single-pulse body diode. The SOT-223-4 package provides a tab that acts as an additional drain thermal pad (with the exposed lead tied to the drain), reducing thermal resistance versus the smaller SOT-23 footprint. This makes the part usable in applications that would overheat a SOT-23 P-MOSFET of similar on-resistance. Architecturally, the device uses Infineon's planar OptiMOS cell technology optimized for low-voltage gate drive and high drain blocking voltage in the same die. Compared with N-channel counterparts, the trade-off is higher on-state resistance (RDS(on)) per unit silicon area, but the benefit is simplified high-side load switching without charge pumps or level shifters. Typical applications include 48 V telecom and industrial bus high-side switches, power-rail OR-ing, battery protection in portable and e-mobility systems, motor and solenoid driver low-side complements, and general-purpose DC load management in industrial controls. When designing, confirm the tab/drain thermal pad is soldered to a sufficient copper pour; with 1.8 W rating this part requires more board copper than a SOT-23 equivalent to stay within thermal limits at full continuous current. This page synthesizes distributor pricing for the Infineon BSP92PH6327XTSA1, sourced drop-in alternatives, and practical PCB/thermal design notes that complement the manufacturer datasheet.
BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon
The Infineon BSR315PH6327XTSA1 is a P-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS platform, rated for -60 V VDS, -620 mA continuous drain current (Ta), and 500 mW power dissipation in a 3-pin PG-SC59 / SOT-23-3 surface-mount package. It is part of Infineon's highly innovative OptiMOS P-channel family designed for high-quality power management in space-constrained designs. A P-channel MOSFET is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by hole conduction rather than electron conduction. In a typical enhancement-mode P-channel device the gate must be pulled below the source to turn the device on. P-channel MOSFETs occupy the same role as N-channel MOSFETs in circuit topology (low-side or high-side switches, load switches, level shifters) but they are particularly useful for high-side switching because they can be driven from a low-voltage gate signal referenced to the system ground, eliminating the need for a charge pump or bootstrap circuit. P-channel MOSFETs are widely used as load switches, in battery protection, USB power switching, and reverse-polarity protection. The BSR315P offers a typical on-state resistance (RDS(on)) of approximately 800 mOhm at -620 mA and -10 V VGS, a gate threshold voltage in the ±20 V VGS range, and an input capacitance of about 176 pF at 25 V. The OptiMOS process achieves low on-resistance per silicon area and fast switching, suiting both linear and saturated switching applications. With a continuous drain current of 620 mA at 25 C ambient and a maximum junction temperature of 150 C, the part balances compact SOT-23-3 packaging with usable power handling when properly derated. The PG-SC59 / SOT-23-3 footprint uses industry-standard 3-pin SMD pinout (GATE / SOURCE / DRAIN), so the part drops directly into standard P-channel SOT-23-3 land patterns designed for similar-rated devices. Tape-and-reel packaging (H6327 suffix) supports high-volume automated assembly. Operating temperature range is -55 C to +150 C junction. Typical applications for the BSR315PH6327XTSA1 include high-side load switching in battery-powered portable equipment, USB power-distribution switches, reverse-polarity / reverse-discharge protection in charger circuits, power-rail OR-ing, and level translation. The 60 V rating provides substantial transient headroom for 12 V automotive and industrial buses. When designing with this part, observe that RDS(on) is specified at -10 V VGS; the device does not fully enhance at logic levels (3.3 V or 5 V). Use a gate-driver transistor or pull the gate to a sufficiently negative rail to ensure low-loss operation, or add a small charge pump if a logic-level gate drive is required. Provide adequate copper pour at the SOURCE tab (pin 2) for thermal dissipation, and derate continuous drain current with ambient temperature per the SOA curve in the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the BSR315PH6327XTSA1 not found in the manufacturer datasheet alone, providing engineers with an at-a-glance comparison against same-brand and cross-brand drop-in equivalents.
BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon
The Infineon BSR316PH6327XTSA1 is a P-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS technology, delivering -100V VDS, -360 mA continuous drain current (at TA), and a maximum on-state resistance of 1800 mOhm in a 3-pin SC-59 (PG-SC59-3) surface-mount package. It is qualified for automotive applications and ships on tape-and-reel for high-volume SMT assembly lines. A P-channel MOSFET is a voltage-controlled field-effect transistor whose majority carriers are holes, allowing it to be turned on by pulling its gate voltage below the source. Designers prefer P-channel parts when a high-side load switch must be driven with a ground-referenced logic signal, eliminating the need for a bootstrap or charge-pump gate driver required by N-channel equivalents. Within the broader discrete-semi taxonomy, the BSR316P belongs to the small-signal MOSFET family, which sits between digital logic transistors and high-current power MOSFETs in terms of voltage, current, and power handling. Key electrical characteristics include a gate threshold voltage typically around -1.7 V (max -2.5 V), fast switching behavior enabled by low gate charge, and a power dissipation rating of 500 mW at TC. The 100V VDS rating provides substantial headroom for switching 12V, 24V, and 48V rails, while the 1800 mOhm RDS(on) keeps conduction losses low enough for continuous 360 mA operation in compact, fan-less enclosures. OptiMOS process technology combines a vertical trench cell structure with optimized silicon geometry to balance RDS(on), gate charge (Qg), and figure-of-merit (FOM). The result is a MOSFET that switches cleanly with low EMI, making it suitable for sensitive analog and mixed-signal subsystems. The SC-59 footprint is industry-standard for three-pin small-signal MOSFETs, easing PCB layout reuse across product variants. Typical applications include high-side load switching in industrial control modules, reverse-polarity protection circuits on battery-powered equipment, DC-DC converter synchronous-rectifier sections, motor-driver H-bridge high-side switches, and general-purpose power management in automotive body electronics, telecom hardware, and consumer devices. When designing with this part, pay close attention to gate-drive voltage headroom and ensure VGS does not exceed +/- 20V. For PWM applications above 50 kHz, confirm that total gate charge fits within the driver's current capability to avoid excessive switching losses. This page synthesizes authorized distributor pricing, verified drop-in alternatives, and practical PCB design notes not consolidated on the Infineon datasheet cover page.
BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon
The Infineon BSR802NL6327HTSA1 is an N-channel small-signal power MOSFET built on Infineon's OptiMOS 2 technology, rated at 20 V VDS and 3.7 A continuous drain current, housed in a 3-pin PG-SC59 (SOT-23 equivalent) surface-mount package with 500 mW power dissipation. What is a small-signal MOSFET? A small-signal power MOSFET is a metal-oxide-semiconductor field-effect transistor designed for low-to-medium current switching applications. It belongs to the broader discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor. These devices serve as the workhorses of low-voltage power conversion, providing fast switching, low on-resistance, and minimal gate drive requirements compared to bipolar transistors. Key features include a maximum drain-source voltage of 20 V, continuous drain current of 3.7 A at TA=25C, and an ultra-low typical on-resistance of 23 mOhm at VGS=4.5 V. The OptiMOS 2 process delivers excellent switching performance with low gate charge and low reverse recovery charge, making it well suited for high-frequency DC-DC converter and load-switch topologies. The device is qualified to automotive standards and operates across the industrial -55C to +150C junction temperature range. The BSR802N uses Infineon's advanced trench MOSFET cell architecture to minimize conduction and switching losses simultaneously. The SC-59 (SOT-346) footprint is a low-profile SMD package widely used where board space is at a premium, offering a thermal pad connection for moderate heat-sinking via copper pours. Typical applications include DC-DC converter primary-side switching, load switches in battery-powered portable devices, power management modules in notebooks and tablets, USB power distribution, and motor drive low-side switches in small actuators. The automotive qualification makes it suitable for body electronics, infotainment, and ADAS peripheral rails. When designing with this part, ensure that VGS is driven to 4.5 V or higher for full enhancement and minimum Rds(on). The PG-SC59-3 package has limited thermal dissipation (500 mW at TA=25C), so for continuous high-current operation above 2 A, a substantial copper area on the PCB is required to maintain junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives from Infineon's OptiMOS portfolio and competitor offerings, and practical PCB layout guidance not found in the manufacturer datasheet alone.
BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon
The Infineon BSS119NH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated at 100 V VDS, 190 mA continuous drain current (at TA=25°C), and 500 mW power dissipation, supplied in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. Built on Infineon's OptiMOS™-equivalent planar N-channel process, it is qualified to AEC-Q101 for automotive applications and optimized as a low-current load switch, level shifter, and signal-conditioning device. What is an N-channel small-signal MOSFET? A small-signal MOSFET is a discrete field-effect transistor designed for low-current switching and analog signal routing rather than high-power conversion. It belongs to the broader metal-oxide-semiconductor FET (MOSFET) family and the discrete-semiconductor hierarchy, sitting between signal-level amplifier transistors and power MOSFETs. Small-signal N-channel MOSFETs such as the BSS119N are widely used for high-side or low-side switching in 12 V and 24 V automotive and industrial rails where a logic-level gate can fully enhance the channel. Key features of the BSS119N include a maximum drain-source on-resistance of 6 Ω typical at VGS=10 V, a gate threshold voltage typically in the 0.8 V to 1.8 V range, and low gate charge that enables fast switching at audio and baseband frequencies. The SOT-23-3 footprint is industry-standard, which allows PCB reuse across many Infineon, onsemi, and Diodes Incorporated N-channel parts. The part is supplied on tape-and-reel for high-volume automated assembly and is RoHS-compliant. Technically, the device uses Infineon's mature planar N-channel technology and a logic-level-compatible threshold so that 5 V microcontrollers can drive the gate directly without a charge pump. The 100 V VDS rating provides substantial headroom over 12 V automotive and 24 V industrial rails, suppressing transient ringing and inductive kickback. The 190 mA continuous drain rating is sufficient for relay coils, small solenoids, signal-line multiplexing, and LED strings. Typical applications include automotive load switching (lamp drivers, relay drivers, small motor control), industrial 24 V sensor multiplexing, battery-protection discharge FETs in low-current packs, level shifters between 3.3 V logic and 12 V buses, and signal-line multiplexing in test equipment. Designers value the part for its automotive-grade reliability and small PCB footprint. When designing with the BSS119N, ensure that the gate is pulled low during power-up with a 100 kΩ resistor to prevent accidental turn-on from floating-gate leakage currents on noisy rails. Limit switching frequency to a few hundred kHz if the part is used in PWM applications to keep switching losses and EMI low. This page synthesizes distributor pricing, automotive-grade context, drop-in alternatives in the SOT-23-3 footprint, and practical PCB design notes that are not consolidated in the manufacturer datasheet.
BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon
The Infineon BSS123IXTSA1 is a 100 V N-channel small-signal OptiMOS MOSFET rated for 190 mA continuous drain current (at TA=25C) with 500 mW power dissipation, packaged in a 3-pin PG-SOT-23-3 surface-mount outline. It is built on Infineon's OptiMOS small-signal process and is qualified for industrial environments, making it well suited for high-density switching in compact modules. A small-signal MOSFET is a discrete field-effect transistor designed for low-current switching, level shifting, and analog signal routing rather than for power conversion. Within the broader semiconductor taxonomy, the BSS123I belongs to the MOSFET family (metal-oxide-semiconductor field-effect transistor), which itself sits under discrete semiconductors and power-management switching devices. Small-signal N-channel MOSFETs like this one are commonly used as low-side switches, in driver stages, in DC-DC converter peripheral circuitry, and in load- and interface-switching applications where the load current does not exceed a few hundred milliamps. Key electrical features of the BSS123IXTSA1 include a 100 V drain-source breakdown voltage, a typical on-resistance (RDS(on)) of about 2.4 ohm at VGS=10 V (with a maximum of 6 ohm per the family datasheet), and a low gate threshold voltage that allows direct 3.3 V or 5 V logic-level drive. The device is housed in the industry-standard SOT-23-3 footprint, providing excellent thermal coupling to the PCB copper pour and enabling reflow-compatible surface-mount assembly. The OptiMOS process technology used in this part delivers a clean, well-controlled transfer characteristic and tight threshold-voltage distribution, which simplifies parallel-device use and ensures predictable switching behavior across temperature. The combination of low gate charge, low input capacitance, and fast switching edges makes the BSS123IXTSA1 a practical choice for high-frequency small-signal paths. Typical applications include low-side switching in battery management and power-path controllers, level-shifters between 1.8 V/3.3 V logic and 12 V/24 V loads, signal multiplexing in instrumentation and test equipment, and discrete driver stages for relays, LEDs, and small solenoids. The 100 V rating provides ample headroom for 12 V and 24 V industrial buses. When designing with the BSS123IXTSA1, observe the 500 mW power dissipation limit of the SOT-23 package and derate appropriately above 25C ambient. For pulse loads, the safe operating area defined in the Infineon datasheet should be respected. Use a gate-source pull-down resistor to prevent inadvertent turn-on during MCU reset. This page combines verified distributor pricing, drop-in same-brand and cross-brand alternatives, and practical design notes that go beyond the manufacturer datasheet to support component selection, sourcing, and PCB-level integration.
BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon
The Infineon BSS123NH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated at 100 V drain-source voltage and 190 mA continuous drain current, housed in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package with 500 mW power dissipation. It belongs to Infineon's BSS123N automotive-qualified family, qualified to AEC-Q101 and RoHS compliant with Pb-free lead plating, making it suitable for both commercial and automotive-grade designs. A small-signal N-channel MOSFET (also called an N-channel enhancement-mode FET or N-FET) is a voltage-controlled transistor that uses a positive gate-to-source voltage to create a conductive channel between drain and source. Within the semiconductor taxonomy, this places it as: small-signal MOSFET -> power MOSFET -> discrete semiconductor -> transistor. These devices are the workhorses of low-power switching, level shifting, and high-side / low-side load driving, where their high input impedance and fast switching make them far more efficient than bipolar transistors at small currents. Key features of the BSS123NH6327XTSA1 include a maximum drain-source on-resistance of 6 Ω at VGS = 10 V, a low threshold voltage compatible with 5 V and 3.3 V logic-level gate drive, and an integrated ESD protection diode on the gate. The SOT-23-3 footprint is a de facto industry standard shared by virtually every small-signal N-FET family, enabling PCB layout reuse across many manufacturers. Automotive AEC-Q101 qualification makes the part suitable for under-hood and body-electronics applications where supplier change control and reliability are required. Architecturally, the BSS123NH6327XTSA1 uses a planar DMOS cell structure optimized for low gate charge (Qg typically around 0.8 nC) and fast switching, with a body-drain diode and an ESD clamp built into the gate pad. The 100 V BVdss rating provides generous margin for 12 V and 24 V automotive buses, while the 6 Ω RDS(on) keeps conduction loss manageable at sub-200 mA loads. Typical applications include load switching in battery-powered IoT devices, level shifters between 3.3 V microcontrollers and 12 V peripherals, high-side driver stages for LEDs and relays, and USB / HDMI port power switching. It is also widely used as a flyback or freewheeling switch in small DC-DC converter blocks. When designing with this device, observe the 500 mW Ta power dissipation limit and derate output current above 70 °C ambient. Gate-source voltage must remain below the absolute maximum of ±20 V, even though logic levels (3.3 V / 5 V) are sufficient to fully enhance the channel. The SOT-23-3 thermal pad is pin 2 (drain), so PCB copper area on the drain node doubles as a heatsink. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single source for selection.
BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon
The Infineon BSS126H6327XTSA2 is a 600 V N-channel depletion-mode SIPMOS small-signal MOSFET housed in a 3-pin SOT-23 (PG-SOT23) surface-mount package. It is rated for a continuous drain current of 21 mA (Ta) with a power dissipation of 500 mW (Ta), and a maximum on-resistance of 500 ohm (typical for the depletion mode). Unlike enhancement-mode MOSFETs, the BSS126 is normally-on at zero gate-source voltage, making it uniquely suited to startup, protection, and analog reference roles. A depletion-mode MOSFET is a field-effect transistor whose channel is physically present at fabrication; conduction is maximum when VGS = 0 and the channel is progressively pinched off as VGS is driven more negative (for an N-channel device). This category sits within the broader MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) family, which in turn belongs to power management and discrete semiconductors. Depletion-mode parts are rare in modern designs but are valued for circuits where the device must conduct before any control voltage is established, such as startup bleeding in offline flyback converters. Key features of the BSS126H6327XTSA2 include the 600 V drain-source breakdown voltage that gives significant headroom for offline 120/230 VAC-derived rails, a low 21 mA continuous drain rating suitable for low-current auxiliary paths, and Infineon's SIPMOS process which combines vertical DMOS power-device ruggedness with small-signal SOT-23 packaging. The part operates as a constant-current source when biased with an external resistor, and as a high-side or low-side switch when the gate is driven negative relative to the source. Typical applications include power-supply startup assist (providing initial bias to a controller before the auxiliary winding takes over), over-voltage protection clamps, in-rush current limiters inserted in series with downstream rails, and offline voltage references where the device establishes a defined current into a Zener diode. Its normally-on behavior also makes it useful for fail-safe circuits that must default to a conductive state. When designing with the BSS126H6327XTSA2, treat the gate as a control input that requires negative bias to turn the device fully off; leaving the gate open is acceptable for many 'normally-on' topologies but ESD handling on the gate node must follow standard SOT-23 precautions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on any single manufacturer or distributor page.
BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon
The Infineon BSS127H6327XTSA2 is a logic-level N-channel SIPMOS small-signal enhancement-mode MOSFET rated at 600 V VDS and 21 mA continuous drain current, packaged in the 3-pin SOT-23 (PG-SOT23) surface-mount outline. The H6327 suffix denotes the 7-inch reel packaging code and the XTSA2 ordering suffix identifies the AEC-Q101 automotive-qualified variant of the BSS127 family. Key features include a logic-level gate drive threshold of 4.5 V, dv/dt ruggedness, very low on-state resistance of 500 ohm typical at 21 mA, and 100% lead-free, RoHS-compliant, halogen-free construction per IEC 61249-2-21. A small-signal MOSFET is a metal-oxide-semiconductor field-effect transistor scaled for low-current switching and analog signal conditioning, occupying the boundary between discrete discrete semiconductors and power-management ICs. SIPMOS (Siemens/Infineon Power MOS) is Infineon's planar vertical-DMOS process family optimized for high breakdown voltage and fast switching in compact surface-mount packages. Within the broader taxonomy, the BSS127 sits at: N-channel MOSFET -> small-signal MOSFET -> discrete semiconductor -> power semiconductor, serving as a building block in low-current high-voltage analog front ends. The BSS127's 600 V drain-source breakdown and 4.5 V VGS(th) make it ideal for direct microcontroller or 5 V logic interface in solid-state relay (SSR) front-ends, high-side bootstrap drivers, and line-side voltage clamps. Its SIPMOS construction provides a low Crss/Ciss ratio that simplifies gate-drive timing and minimizes shoot-through losses in half-bridge or totem-pole stages. The 21 mA continuous current rating suits signal-level loads such as optocouplers, low-power relays, and piezo transducers, while the 500 mW power rating limits pulsed dissipation to short-duration switching events. Typical applications include solid-state relay (SSR) input/output stages, high-voltage signal multiplexing, line-voltage interface circuits in white goods and industrial controls, automotive sensor interfaces, and as a low-side switch in flyback or buck converter housekeeping blocks. The AEC-Q101 automotive qualification supports deployment under-the-hood and in body-electronics modules operating across -40 C to +150 C junction temperature. When designing with the BSS127, gate-source protection with a 10 kohm pull-down resistor is recommended to prevent inadvertent turn-on from dv/dt coupling. Total gate charge Qg should be sourced from a sufficiently stiff driver to keep switching losses bounded; consult the manufacturer's datasheet for the typical application circuit and thermal derating curves. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSS138L - 50V 200mA N-Channel MOSFET SOT-23 | onsemi
The onsemi BSS138L is an N-channel enhancement-mode small-signal power MOSFET rated for 50 V drain-source voltage, 200 mA continuous drain current (Ta), and 350 mW power dissipation, housed in a 3-pin SOT-23 surface-mount package. A MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switching device within the broader family of transistors and discrete semiconductors. Small-signal MOSFETs like the BSS138L occupy the low-power end of the power MOSFET hierarchy, sitting between general-purpose bipolar junction transistors and larger medium-power SOT-223/DPAK devices. Because the gate is isolated by an oxide layer, the device draws essentially zero DC gate current, allowing direct drive from microcontroller GPIO pins and logic-level 3.3 V or 5 V signal sources. Key features include trench MOSFET technology that minimizes on-state resistance (approximately 3.5 ohms RDS(on) at 10 V gate drive), logic-level gate threshold enabling direct 3.3 V/5 V drive, rugged and reliable fast-switching performance, and the compact industry-standard SOT-23 footprint that keeps board area under 3 mm x 3 mm including pads. Technically, the BSS138L is produced using onsemi high-cell-density trench MOSFET technology, which increases channel density per die area, reducing RDS(on) while preserving fast switching transition times well suited to PWM loads. The enhancement-mode structure means the device is OFF at zero gate-source voltage and turns ON with a positive gate voltage above threshold, simplifying level-shifting and load-switch circuits in mixed-voltage systems. Typical applications cited by onsemi include DC-DC converters and power management in portable, battery-powered products such as computers, printers, PCMCIA cards, and cellular and cordless telephones. It is also widely used as a level shifter between 3.3 V and 5 V logic domains and as a low-side load switch for LEDs, relays, and sensors. Design consideration: with a 3.5 ohm on-resistance, conduction loss at the full 200 mA rating is roughly 0.14 W (I2R estimate), a meaningful fraction of the 350 mW package limit, so derating at elevated ambient temperatures is advisable. This page synthesizes distributor pricing, verified drop-in alternatives, pinout data, and practical design notes in one place, adding sourcing and engineering value beyond the raw manufacturer datasheet.