BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon
부품 번호: BSR316PH6327XTSA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.41 | $41.00 |
| 500 | $0.33 | $165.00 |
| 1,000 | $0.27 | $270.00 |
| 3,000 | $0.22 | $660.00 |
BSR316PH6327XTSA1 개요
A P-channel MOSFET is a voltage-controlled field-effect transistor whose majority carriers are holes, allowing it to be turned on by pulling its gate voltage below the source. Designers prefer P-channel parts when a high-side load switch must be driven with a ground-referenced logic signal, eliminating the need for a bootstrap or charge-pump gate driver required by N-channel equivalents. Within the broader discrete-semi taxonomy, the BSR316P belongs to the small-signal MOSFET family, which sits between digital logic transistors and high-current power MOSFETs in terms of voltage, current, and power handling.
Key electrical characteristics include a gate threshold voltage typically around -1.7 V (max -2.5 V), fast switching behavior enabled by low gate charge, and a power dissipation rating of 500 mW at TC. The 100V VDS rating provides substantial headroom for switching 12V, 24V, and 48V rails, while the 1800 mOhm RDS(on) keeps conduction losses low enough for continuous 360 mA operation in compact, fan-less enclosures.
OptiMOS process technology combines a vertical trench cell structure with optimized silicon geometry to balance RDS(on), gate charge (Qg), and figure-of-merit (FOM). The result is a MOSFET that switches cleanly with low EMI, making it suitable for sensitive analog and mixed-signal subsystems. The SC-59 footprint is industry-standard for three-pin small-signal MOSFETs, easing PCB layout reuse across product variants.
Typical applications include high-side load switching in industrial control modules, reverse-polarity protection circuits on battery-powered equipment, DC-DC converter synchronous-rectifier sections, motor-driver H-bridge high-side switches, and general-purpose power management in automotive body electronics, telecom hardware, and consumer devices.
When designing with this part, pay close attention to gate-drive voltage headroom and ensure VGS does not exceed +/- 20V. For PWM applications above 50 kHz, confirm that total gate charge fits within the driver's current capability to avoid excessive switching losses.
This page synthesizes authorized distributor pricing, verified drop-in alternatives, and practical PCB design notes not consolidated on the Infineon datasheet cover page.
드롭인 대체품: BSR316PH6327XTSA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSR316PH6327XTSA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Drain-Source Voltage (VDS), FET Type, Operating Temperature Range, Automotive Qualification.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSR316PL6327
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSP129H6327XTSA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.3 / 개
데이터시트 보기 →BSP92PH6327XTSA1
✅ 드롭인✓ 재고 있음
$0.31 / 개
데이터시트 보기 →NTR4101PT1G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI2309DS-T1-E3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSR316PH6327XTSA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Number | BSR316PH6327XTSA1 |
| Series | OptiMOS |
| FET Type | P-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TA | -360 mA |
| On-State Resistance RDS(on) max | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | -1.7 V typical, -2.5 V max |
| Power Dissipation (Tc) | 500 mW |
| 패키지 | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| 실장 유형 | Surface Mount |
| 동작 온도 범위 | -55 C to +150 C (junction) |
| Qualification | Automotive |
| RoHS 상태 | Compliant |
| MSL 레벨 | 1 |
| Polarity | P-Channel |
BSR316PH6327XTSA1 핀 구성
| 핀 1 | Gate (G) — Gate control input; pull to source voltage to turn off, pull below source by VGS(th) to turn on |
| 핀 2 | Source (S) — Source terminal; connects to higher-voltage rail in high-side P-channel switching |
| 핀 3 | Drain (D) — Drain terminal; connects to load in high-side switching topology |
안전 동작 영역 (DC)
일반적인 애플리케이션
BSR316PH6327XTSA1 적합 용도: 6 애플리케이션s: High-Side Load Switch, Reverse-Polarity Protection, Automotive Body Electronics, DC-DC Converter Synchronous Rectifier, Battery Charging Cutoff Switch, Motor Driver H-Bridge High-Side.
High-Side Load Switch
BSR316PH6327XTSA1 is well-suited as a high-side load switch in 12V and 24V industrial control modules where a ground-referenced logic signal must control power to a downstream load. The P-channel configuration eliminates the need for a bootstrap gate driver, allowing direct GPIO control from a microcontroller operating at 3.3V or 5V logic. With -100V VDS headroom, the device easily tolerates automotive load-dump transients up to 35V while maintaining safe operation. The 1800 mOhm RDS(on) introduces only ~65 mV drop at 36 mA, preserving regulation margin for downstream regulators. Placed between the supply rail and the load with a pull-up resistor on the gate to keep it off by default, it provides a clean, low-quiescent-current switching solution.
추천
Reverse-Polarity Protection
BSR316PH6327XTSA1 serves as an ideal reverse-polarity protection (RPP) MOSFET in battery-powered systems where the supply may be inadvertently reversed. Positioned with source tied to the battery positive terminal and drain to the downstream load, it conducts during normal polarity with body-diode drop near zero once the gate is pulled low. During reverse polarity, the gate-source voltage becomes positive, turning the MOSFET off and blocking current flow. The 100V VDS rating provides generous margin beyond the typical 36V automotive load-dump specification. Compared to a Schottky diode RPP, the MOSFET approach reduces conduction loss from ~300 mV down to ~50 mV at 360 mA, extending battery life by 5-10% in continuous-draw applications.
추천
Automotive Body Electronics
BSR316PH6327XTSA1's automotive qualification and -55C to +150C junction temperature range make it suitable for body-electronics modules controlling lighting, mirrors, seat adjusters, and accessory outlets. The P-channel topology simplifies gate drive from the module's microcontroller without auxiliary supply rails, while the 100V VDS rating protects against jump-start and load-dump transients common on 12V automotive buses. At 1800 mOhm RDS(on), the device handles continuous 360 mA loads such as LED strings and small solenoids with minimal thermal stress. Designers commonly pair this MOSFET with a TVS diode across the drain-source to clamp avalanche energy during inductive load switching, extending reliability over the vehicle's lifetime.
추천
DC-DC Converter Synchronous Rectifier
BSR316PH6327XTSA1 can be deployed as a low-current synchronous rectifier on the secondary side of buck or boost converters where a P-channel switch simplifies the high-side drive. In a 12V-to-3.3V buck topology, it replaces a Schottky rectifier to reduce conduction loss by 40-60% at moderate load currents. The 360 mA continuous rating suits sub-1W point-of-load conversions for sensor bias, MCU rails, and analog front-end supplies. Designers should evaluate switching frequency versus gate-charge losses; above 100 kHz the part's gate charge becomes a meaningful contributor to total loss and a smaller-footprint dedicated synchronous rectifier IC may be preferred.
추천
Battery Charging Cutoff Switch
BSR316PH6327XTSA1 functions effectively as a low-side cutoff switch in single-cell Li-ion and multi-cell NiMH charging paths where the charger IC requires a logic-controlled disconnect. When the gate is pulled high (VGS near 0V), the P-channel MOSFET turns off, isolating the load from the battery. The 100V VDS rating supports up to 6-cell Li-ion stacks with significant transient margin. At 360 mA continuous, it pairs with chargers in the 100-500 mA range commonly used for wearables, IoT sensor nodes, and small portable medical devices. Low gate leakage (typically < 1 uA) preserves battery shelf life when the cutoff switch is held off for extended periods.
추천
Motor Driver H-Bridge High-Side
BSR316PH6327XTSA1 can serve as a high-side switch in low-current H-bridge configurations driving small brushed DC motors in toys, appliances, and valve actuators. Using two P-channel devices on the high side and two N-channel on the low side, designers achieve a simple 4-quadrant motor control topology with ground-referenced gate drive for all switches. The 360 mA continuous rating suits fractional-horsepower motors up to ~1W mechanical output. The 100V VDS margin allows safe handling of inductive kickback during PWM commutation when paired with a flyback diode across each motor terminal. This topology is common in low-cost consumer products where driver IC cost must be minimized.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSR316PH6327XTSA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSR316PL6327 | BSP92PH6327XTSA1 | BSP129H6327XTSA1 | NTR4101PT1G | SI2309DS-T1-E3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | SC-59 (PG-SC59-3) | SC-59 (PG-SC59-3) - same | SC-59 (PG-SC59-3) - same | SC-59 (PG-SC59-3) - same | SC-59 (SOT-23-3) - same | SC-59 (SOT-23-3) - same |
| Polarity | P-Channel | P-Channel | P-Channel | N-Channel Depletion | P-Channel | P-Channel |
| VDS Rating | -100 V | -100 V | -100 V | -200 V (N-ch) | -30 V | -30 V |
| Automotive Qualified | Yes | Yes | Yes | Yes | No | No |
| Unit Price (qty-1, USD) | $0.62 | $0.60 | $0.55 | $0.45 | $0.40 | $0.50 |
주요 차별점
- Higher VDS rating in the same SC-59 footprint (vs NTR4101PT1G)
- Automotive qualification across the part family (vs SI2309DS-T1-E3)
- Lower on-resistance per dollar in the SC-59 class (vs BSP129H6327XTSA1)
설계 노트
At the maximum continuous drain current of -360 mA with the worst-case RDS(on) of 1800 mOhm, conduction loss reaches approximately 0.23W. Estimated: at TA = 25C with the SC-59's typical theta_JA of 350 C/W on a 1-oz 1-square-inch copper pad, junction temperature rises 81C above ambient (Pdiss x theta_JA = 0.23 x 350 = 80.5C), keeping Tj below the 150C maximum with adequate copper. Above 200 mA continuous, attach the SC-59 drain pad (pin 3) to at least 50 sq mm of copper pour to keep Tj safe in enclosed housings.
Place the BSR316PH6327XTSA1 gate pull-up resistor (typically 100 kOhm to the source pin) as close to the gate pin as possible to minimize noise injection during high dV/dt switching events. Keep the gate trace short and avoid routing it parallel to drain-source switching nodes for more than 5 mm. Add a 10 kOhm gate-source resistor to prevent inadvertent turn-on from leakage currents when the device is held off. For PWM frequencies above 50 kHz, place a small gate-source snubber (1 nF + 10 kOhm) to control ringing.
Do not exceed VGS = +/- 20V; driving the gate beyond this absolute maximum will damage the gate oxide. Verify that the upstream gate driver can pull the gate fully to the source potential to ensure turn-off; a weak high-side pull-up may leave the MOSFET in linear operation. For inductive loads, always include a flyback path - either a Schottky diode across the load or a TVS across the MOSFET drain-source - to clamp avalanche energy below the rated EAS. Cross-check maximum VDS during turn-off transients against the 100V rating.
규정 준수 정보
Automotive qualified per Infineon internal reliability program. RoHS and REACH compliant per Infineon product declaration. AEC-Q100 status: automotive qualification does not equate to AEC-Q100 standard certification; refer to Infineon product folder for specific automotive grade documentation.
