모바일 LPDDR4
제품 (3)
H58G46AK6QX033 - LPDDR5-6400 2GB Automotive DRAM | SK Hynix
The SK hynix H58G46AK6QX033 is an automotive-grade LPDDR5 DRAM memory IC delivering 16Gb (2GB) of density with a 16-bit data interface and a maximum data rate of 6400 Mbps per pin, housed in a fine-pitch ball grid array (FBGA) package. LPDDR5 (Low Power Double Data Rate 5) is the fifth generation of JEDEC-defined low-power synchronous DRAM technology, optimized for mobile, edge computing, and automotive systems that require high memory bandwidth with strict power budgets. Within the memory hierarchy, LPDDR5 sits under the broader categories of DRAM, synchronous memory, and semiconductor memory ICs, and is distinguished from DDR5 DIMM memory by its soldered-down BGA mounting, lower operating voltages, and deep power-down states. Key features of the H58G46AK6QX033 include its 6400 Mbps peak data rate, 16-bit (x16) bus organization, 16Gb per-die density class, and automotive qualification targeting extended temperature and reliability requirements for vehicle platforms. The 16Gb organization allows a single package to provide 2GB of main memory, reducing board area compared with stacking multiple lower-density packages. Architecturally, LPDDR5 introduces bank groups, WCK clocking, and features such as DVFS (dynamic voltage frequency scaling) and deep-sleep modes that let the memory controller trade bandwidth for power in real time. At 6400 Mbps the interface supplies up to 12.8 GB/s of peak bandwidth on a single x16 channel, sufficient for ADAS perception stacks, infotainment, and domain controllers. Typical applications include automotive ADAS domain controllers, digital cockpits and infotainment SoCs, telematics gateways, and high-reliability industrial computing modules where low-power soldered memory is required. Design consideration: LPDDR5 signal integrity at 6400 Mbps demands careful length-matched routing, reference plane continuity, and SoC memory-controller training; always verify the SoC's LPDDR5 speed-grade support and follow the platform vendor's layout guidelines. This page synthesizes distributor stock data, drop-in alternative candidates, and procurement guidance not found in the manufacturer datasheet, with pricing verified as of 2026-09-05.
H5ANAG6NCR-UHC - 16Gb DDR4 SDRAM 1Gx16 FBGA-96 | SK Hynix
The SK Hynix H5ANAG6NCR-UHC is a 16Gb (2GB) DDR4 SDRAM organized as 1Gx16, fabricated in SK hynix CMOS process and housed in a 96-ball FBGA (PBGA-96) surface-mount package for main-memory applications. According to the SK hynix 16Gb DDR4 SDRAM family datasheet, this device delivers the large density and high bandwidth required by computing and embedded platforms. DDR4 SDRAM (Double Data Rate fourth-generation synchronous DRAM) is the dominant volatile main-memory technology for servers, desktops, industrial controllers, and embedded computing modules. Within the memory hierarchy, a DDR4 SDRAM sits below the CPU cache and above storage, providing random access to working data at multi-gigabit-per-second transfer rates while requiring a memory controller to manage refresh, bank activation, and command timing. Key characteristics of this family include a 16Gbit monolithic die density, a x16 data interface that simplifies 16-bit and 32-bit memory bus designs, and DDR4 features such as bank groups, burst length 8, and on-die termination. The UHC speed suffix denotes a commercial/industrial operating-range speed grade within the H5ANAG6N family, and the C die revision is a later-generation shrink of the A-die H5ANAG6NAMR, typically offering improved power characteristics. Architecturally, the device organizes capacity into multiple banks and bank groups addressed by row and column strobes, using a 1.2V-class core supply typical of DDR4. Internal pipelining and DLL-based clocking sustain high-burst bandwidth, while DDR4 protocol features reduce command bus contention versus DDR3. Typical applications include main memory for embedded x86 and ARM computing modules, industrial controllers requiring large working memory, network appliances, data logging systems, and replacement sourcing for aging DDR4 BOMs. The x16 organization suits cost-optimized boards where a full 64-bit bus is not required. Designers should verify controller compatibility with the die revision C timing set, implement DDR4 fly-by routing with proper termination, and confirm the exact speed grade suffix against the ordering information table in the official datasheet. This page synthesizes distributor availability data, same-family drop-in variants, and practical DDR4 design guidance not consolidated in the manufacturer datasheet, with all unverified parameters explicitly flagged for engineering review.
MT53D1024M32D4DT-046 AUT:D - 32Gbit LPDDR4 DRAM | Micron
The Micron MT53D1024M32D4DT-046 AUT:D is an automotive-grade 32 Gbit mobile LPDDR4/LPDDR4X SDRAM with a 1 Gbit x 32 I/O organization, 1866 MHz (4266 MT/s class) operation, and a 200-ball WFBGA (approximately 10 x 14.5 mm) package rated from -40 C to +125 C ambient for automotive deployments. LPDDR4 (Low Power Double Data Rate 4) is a mobile DRAM standard of the SDRAM family of volatile memory ICs. It uses a low-voltage interface (1.10 V VDDQ for LPDDR4, 0.60 V VDDQ for LPDDR4X) to deliver high bandwidth with very low standby power, which is why it dominates smartphones, tablets, ADAS domains, and infotainment systems. It sits in the memory hierarchy between high-bandwidth DDR SDRAM and low-capacity SRAM. Key features of this Micron automotive variant include the 32 Gbit density in a single package, 32-bit wide data bus, the unified LPDDR4/LPDDR4X die architecture from Micron's 200b datasheet, speed grade -046, and the AUT:D automotive suffix denoting the -40 C to +125 C operating range and automotive quality flow. The unified die supports both LPDDR4 (1.10 V VDDQ) and LPDDR4X (0.60 V VDDQ) operation, letting designers trade interface power against existing controller support. VDDQ power can be reduced significantly in LPDDR4X mode, cutting interface power - a major benefit in battery-fed or thermally constrained automotive camera and sensor-fusion systems. Typical applications include ADAS front-camera and radar sensor fusion buffers, automotive infotainment and cluster displays, telematics and gateway modules, and industrial edge vision systems where extended temperature range is mandatory. Design consideration: the ball-grid-array WFBGA package requires a high-precision SMT process; verify signal-integrity routing of the fly-by CK/CA bus and verify termination per the platform memory controller guidelines. This page synthesizes distributor pricing, automotive LPDDR4 alternatives, and practical design notes not found in the manufacturer datasheet.