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BSP78HUMA1 - 42V 3A Smart Low-Side Switch | Infineon HITFET
The Infineon BSP78HUMA1 is a 42V, 3A N-channel vertical power FET implemented in Smart SIPMOS technology, packaged in a PG-SOT223-4 surface-mount outline and qualified to AEC-Q100 for automotive use. It functions as a self-protected low-side switch integrating a logic-level input, ESD protection, overload protection, short-circuit protection, overvoltage protection (including load-dump transients), current limitation, and thermal shutdown with auto-restart. Maximum on-state resistance is 200 mΩ typical at room temperature, with a continuous load current capability up to 3 A. The integrated charge pump holds the gate above threshold during low-Vds operation, ensuring stable Rds(on) across the full operating range. A low-side switch is a power switch that connects the load to ground while the high side of the load sits at the supply rail. Compared with high-side switches, low-side drivers simplify N-channel MOSFET drive because the source reference is at ground, but they cannot detect load-side ground faults and they share the chassis/board ground with the controller. BSP78HUMA1 belongs to the broader HITFET family of Infineon protected switches - devices positioned between discrete MOSFETs (which require external protection) and full high-side PROFET switches, and they serve automotive body-electronics, industrial 24 V systems, and any application that needs a robust, logic-controlled ground-referenced switch. Key features include 4.5 V to 42 V operating supply range, logic-level input compatible with 3.3 V and 5 V microcontrollers, open-drain diagnostic output for fault feedback, very low standby current, and -40 °C to +150 °C operating junction temperature. The PG-SOT223-4 (TO-261-4) package with an exposed tab provides a low thermal resistance path to PCB copper, supporting sustained 3 A switching without external heatsinking in well-designed layouts. Typical applications span automotive body controllers driving resistive, inductive, or lamp loads, industrial PLC outputs, 24 V solenoid and valve drivers, LED lighting modules, and any 12 V/24 V ground-referenced load that benefits from on-die protection. The device is drop-in compatible with the broader Infineon HITFET family in the same SOT-223 footprint. When designing with the BSP78HUMA1, ensure the inductive load has a freewheeling path (clamp diode or TVS) and that the PCB tab is soldered to a sufficient copper pour to keep junction temperature within SOA. The diagnostic pin requires a pull-up resistor; floating it disables fault reporting. This page consolidates distributor pricing, parametric cross-reference alternatives, and design notes that complement the manufacturer datasheet for engineers evaluating a 12 V/24 V protected low-side switch.
BTF3050TEATMA1 - 3A 12V HITFET+ Low-Side Switch | Infineon
The Infineon BTF3050TEATMA1 is a 3 A N-channel low-side power switch from Infineon's HITFET+ family, housed in a PG-TO252-5-11 (DPAK-5) surface-mount package. It integrates an N-channel MOSFET power stage with 3.3 V/5 V CMOS-compatible logic inputs, on-chip ESD protection, current limiting, and adjustable switching slew rate for 12 V automotive and industrial loads. The device is qualified to AEC-Q100 for automotive use and supports an operating supply range of 3.0 V to 5.5 V on the logic supply and continuous drain current up to 3 A. A low-side switch (also called a low-side driver) is a type of power distribution switch that places an N-channel MOSFET between the load and ground, with the load tied directly to the supply rail. This topology is widely used in automotive body electronics, where it offers simple logic-level control, inherent short-to-ground protection, and easy paralleling of multiple channels. Low-side switches sit in the broader power-management hierarchy of load drivers -> power distribution switches -> power management ICs -> semiconductors, and are a complement to high-side switches such as Infineon's PROFET family. Key differentiating features of the BTF3050TEATMA1 include a 100 mOhm maximum on-state resistance (RDS(on)) at 25 C, an adjustable dV/dt slew-rate pin for EMI tuning, a 30 A internal current limit, status feedback, and a typical turn-on time of 15 us with turn-off of 30 us. Protection features include over-current, over-temperature, over-voltage, and reverse-battery ruggedness, making it suitable for harsh 12 V automotive environments where load-dump transients are common. The BTF3050TE uses a vertical N-channel MOSFET output structure with charge pump gate drive, allowing full enhancement at logic-level VGS. The integrated charge pump, ESD network and protective diodes are co-packaged in the same die as the power MOSFET, enabling a compact 5-pin DPAK footprint. This monolithic integration reduces external component count compared to discrete MOSFET + driver designs. Typical applications include driving automotive solenoids, relays, lamps, LED strings, small DC motors, and resistive heating elements. It is also widely used as a protected driver for industrial PLC outputs and process-control valves. The PG-TO252-5-11 (DPAK) package has a low thermal resistance (RthJA around 50 C/W on a 1 sq inch copper pour), supporting continuous 3 A operation with proper PCB thermal design. When designing with this part, ensure the PCB copper area under the tab is sufficient to dissipate I^2RDS(on) losses at worst-case ambient temperature. A 10 nF gate capacitor on the SR pin is the typical starting point for slew-rate adjustment, but the value must be tuned to the load's inductance to avoid ringing below the EMI limit. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with all parametric values cross-checked against the Infineon HITFET+ datasheet.
BTG70013A1ESWXUMA2 - 26.6A PROFET Wire Guard 12V High-Side Switch
The Infineon BTG70013A1ESWXUMA2 is a 26.6 A single-channel smart high-side power switch in the PROFET Wire Guard 12V family, housed in a PG-TSDSO-24-32 package with exposed pad. It integrates a vertical N-channel power MOSFET with 1:1 power switch/driver logic, on-chip protection, and digital diagnostics targeted at 12 V automotive and industrial body-electronic loads. The device operates from a nominal 12 V supply, supports load currents up to 26.6 A, and is qualified to ISO 26262 for safety-related automotive systems. A high-side switch is a power-distribution building block that sits between the supply rail (typically the automotive 12 V battery) and the load, replacing discrete fuses, relays, and MOSFET drivers. It belongs to the broader category of smart power switches (also called intelligent power switches, IPS, or PROFET devices), which integrate a power transistor, gate driver, current sense, and diagnostic feedback into one IC. Within a vehicle electrical/electronic (E/E) architecture, it sits under the body control module (BCM) and power distribution box, protecting wiring harnesses from over-current and short-circuit events while reporting fault status back to the MCU. Key specifications of the BTG70013A1ESWXUMA2 include a 26.6 A maximum load current, an active-high logic input, a selectable integrated I²t wire-harness protection function, an IDL pin for microcontroller wake-up from key-off mode, and an operating supply current under 60 µA in active key-off (idle) mode. Embedded protection features include over-current, over-voltage, over-temperature, reverse battery, and loss-of-ground protection per Infineon's PROFET datasheet. The device is rated for use with 12 V automotive loads and supports diagnostic feedback through a status / current-sense pin. The BTG70013A uses a vertical DMOS output stage driven by a charge-pump-assisted gate driver, enabling true rail-to-rail low-RDS(on) switching in a small PG-TSDSO-24-32 thermal-enhanced package. The integrated I²t characteristic lets designers select a wire-protection curve by external component choice, matching the thermal limit of the harness rather than a fixed silicon trip point. This is critical for AEC-Q100 and ISO 26262-compliant automotive wiring systems where the wire itself is the weakest thermal element. Typical applications include automotive body-electronic loads such as LED lighting modules, seat heaters, mirror heaters, auxiliary 12 V outlets, and small DC motor drivers. It is also used in industrial 24 V systems and truck / agricultural 24 V body controllers where 12 V-class smart switches are deployed per channel. The low idle current under 60 µA makes it suitable for permanently-live nodes that must not drain the battery during key-off parking. When designing with this part, ensure the PCB layout provides sufficient copper area on the exposed pad for thermal dissipation, place the input/bulk capacitor as close as possible to the VBB pin, and configure the I²t selection network per the application curve in the datasheet. The IDL wake pin must be wired to an MCU interrupt-capable GPIO to use the key-off wake feature; floating this pin disables the wake function but does not affect normal operation.
BTG7003A1EPWXUMA2 - 15.7A PROFET Wire Guard High-Side Switch | Infineon
The Infineon BTG7003A1EPWXUMA2 is a single-channel, 15.7 A high-side smart power switch from the PROFET™ Wire Guard 12 V family, housed in a PG-TSDSO-14-22 exposed-pad package. Built around an N-channel power MOSFET configured as a 1:1 high-side driver with active-high logic input, the device integrates wire-protection diagnostics (I²t), over-current, over-voltage, and thermal shutdown, and is qualified to ISO 26262 for use in automotive safety-relevant systems. Continuous load current is rated up to 15.7 A with a low 50 µA idle-mode quiescent current, making it suitable for energy-efficient body and chassis ECUs. A high-side switch (HSS) is a semiconductor load driver that sits between the supply rail (e.g., a 12 V automotive bus) and the load, controlling current return through the device. PROFET Wire Guard is a sub-category of protected MOSFET switches that adds on-die diagnostic and protection logic. This sits inside the broader hierarchy: smart power switch -> load driver -> power management IC -> semiconductor device. PROFET Wire Guard devices are designed specifically for 12 V automotive wiring harnesses, where they can detect and react to wire faults that classic fuses cannot. Key features of the BTG7003A1EPWXUMA2 include an operating voltage range of 6 V to 18 V (load-dump tolerant up to 40 V), 15.7 A continuous load current, 50 µA idle current, integrated I²t wire-protection, reverse-battery protection, and an integrated charge pump that provides true high-side switching with R_DS(on) of about 10 mΩ. The PG-TSDSO-14-22 package has an exposed thermal pad that minimizes junction-to-PCB thermal resistance, allowing the part to sustain high continuous currents in compact modules without an external heatsink. From an architecture standpoint, the device pairs a vertical N-channel power stage with on-die control logic including a charge pump, gate driver, current sense, and protection state machine. The I²t wire-protection algorithm emulates the thermal time constant of the wire harness, allowing the switch to predictably limit energy delivered into a fault before the conductor overheats. Infineon's ISO 26262 documentation streamlines integration into ASIL-rated systems. Typical applications include automotive body-control modules, seat-heater and seat-belt pretensioner drivers, LED lighting drivers, HVAC flap actuators, and generic 12 V resistive or inductive load switching. The device is best suited when designers need a single robust high-side channel rather than a multi-channel PROFET+ device, or where wire-protection certification is required. When designing with this device, ensure the load is truly single-channel and within 15.7 A; for higher current use a parallel PROFET+ part. Add a reverse-battery blocking diode or use the integrated feature, and follow Infineon's PCB layout guidance for the exposed pad. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTG70501EPLXUMA1 - 3A Smart High-Side Switch | Infineon PROFET
The Infineon BTG70501EPLXUMA1 is a 3 A automotive smart high-side power switch (PROFET +2 12V Load Guard) housed in a 14-pin PG-TSDSO exposed-pad package. It integrates a 1:1 N-channel power MOSFET driver with built-in current limiting at 3 A, comprehensive diagnostic feedback, and enhanced protection features for 12 V automotive power distribution. The part is qualified to AEC-Q100 for automotive use. A high-side smart switch (PROFET) is a type of power distribution switch that sits between the supply rail (typically a 12 V automotive battery) and the load, replacing discrete MOSFETs plus fuses with a single protected IC. The PROFET family sits inside the broader taxonomy: power distribution switch -> load driver -> power management IC -> semiconductor. Compared with a discrete N-MOSFET driven by a GPIO, a PROFET provides accurate current limiting, short-circuit protection, thermal shutdown, and load-dump immunity in one IC, simplifying PCB layout and improving reliability for body-electronics loads. Key features of the BTG7050-1EPL include a 3 A overcurrent trip, 2.7 V to 28 V supply range (Vcc), -40 C to +150 C junction temperature, current limit switch (CLS) mode for ADAS and power distribution, plus diagnostic outputs that signal open-load, short-to-battery, short-to-ground, and overtemperature events. The exposed-pad PG-TSDSO-14 package keeps the thermal path short for repetitive inrush loads such as LED arrays, solenoids, and small DC motors. The BTG7050-1EPL is built on Infineon's PROFET +2 12V smart-power process, which combines a vertical N-channel DMOS output stage with mixed-signal control logic on the same die. The current-limit loop is trimmed per device, which avoids the unit-to-unit variation seen in discrete polyfuse or PTC solutions and gives predictable behavior at cold-crank (Vbat dropping momentarily below 6 V) and load-dump (Vbat surges above 35 V) events. Typical applications include body-control modules driving LED lighting, relay replacement, seat-heater elements, mirror actuators, and infotainment peripherals. The wide Vcc range and AEC-Q100 qualification make it equally suitable for ADAS sensor rails and zonal-architecture power distribution. CLS mode is specifically tuned for power-distribution topologies where multiple PROFETs feed downstream ECUs. When designing with this part, follow Infineon's recommended PCB layout for the exposed thermal pad - solder the EP to a copper pour of at least 1 cm^2 to keep RthJA within the datasheet envelope under repeated inrush. Always check the inrush profile of the load (bulb, motor, capacitor bank) against the published I(SC) and E(AS) limits before selection. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet, giving procurement and design engineers a single reference for evaluating the BTG70501EPLXUMA1 in 12 V automotive power-distribution designs.
BTG70902EPLXUMA1 - 2A PROFET+2 12V Smart High-Side Switch | Infineon
The Infineon BTG70902EPLXUMA1 is a 2 A single-channel smart high-side power switch from the PROFET+2 12V family, housed in a PG-TSDSO-14 package with an exposed thermal pad. It is designed for automotive 12 V load-driving applications and integrates one N-channel MOSFET output stage with a 1:1 input-to-output ratio, providing continuous load current up to 2 A with fixed current limiting and comprehensive on-chip protection. The device targets resistive, inductive, and capacitive loads in body electronics modules. A smart high-side switch, also called a PROFET (Protected MOSFET), is a self-protected power semiconductor that combines a power MOSFET driver with diagnostic and protection logic in a single package. It sits between a microcontroller and a grounded load, replacing discrete relay or fuse circuits. Within the broader product hierarchy it belongs to power distribution switches, then power management ICs, then semiconductor ICs. The PROFET+2 12V generation emphasizes low standby current, accurate current sense, and AEC-Q100 automotive qualification. Key features include fixed current limiting, short-circuit protection, over-temperature shutdown with latch behavior, over-voltage and under-voltage lockout, reverse battery protection, and slew-rate control for EMI mitigation. The integrated diagnostic interface reports fault status to the host MCU through the DEN pin, while the DSEL pin selects the active channel and the IN pin enables the output. These functions reduce external component count compared with discrete MOSFET designs. The BTG70902EPLXUMA1 uses a vertical N-channel DMOS output structure driven by a CMOS control block containing charge pump, bandgap reference, gate driver, and protection comparators. This monolithic integration enables fast fault response (typically microseconds) and consistent protection thresholds across temperature. The exposed pad of the PG-TSDSO-14 package provides a low thermal resistance path, supporting continuous 2 A operation on moderate PCB copper area without external heatsinking. Typical applications include automotive lighting (interior LED modules, tail lamps, courtesy lights), body control modules driving small motors and solenoids, heating elements such as seat heaters and mirror heaters, and resistive loads like reference grounds. The diagnostic output is particularly useful in ECU designs that require ISO 26262-style fault monitoring or end-of-line load verification. When designing with the BTG70902EPLXUMA1, follow Infineon PROFET application guidelines for input capacitor selection, PCB copper area, and reverse-battery protection. Use the DEN pin in normal-low idle mode to minimize quiescent current; do not leave IN floating, as this may cause undefined output behavior. This page synthesizes Infineon datasheet parameters, distributor pricing across DigiKey, Mouser, LCSC and Octopart, and engineering design considerations not found in any single source.
BTH60351EPLXUMA1 - 35mΩ 60V Smart High-Side Switch | Infineon
The Infineon BTH60351EPLXUMA1 is a 35 mΩ single-channel smart high-side power switch from the PROFET™ + 48V family, housed in a PG-TSDSO-14 exposed-pad package. It is built around an N-channel vertical power MOSFET with an integrated charge pump and provides up to 5 A continuous load current with adjustable current limitation, current-sense diagnosis, and comprehensive protective functions for 8 V to 60 V board nets (48 V automotive systems). A smart high-side switch is a semiconductor relay that connects a load (lamp, solenoid, motor winding, LED string) to the battery rail while the low-side control logic operates at 3.3 V or 5 V. Within the broader product taxonomy, the BTH60351EPLXUMA1 belongs to the high-side switch (HSS) family, which sits under power distribution switches (PDS), which in turn belong to power management ICs and ultimately the semiconductor category. Compared to a discrete MOSFET plus fuse, an integrated HSS adds diagnosis, slew-rate control, and self-protection without external components. Key features include a 35 mΩ typical on-state resistance at 25 °C, 3.3 V/5 V compatible logic inputs, electrostatic discharge (ESD) protection, optimized electromagnetic compatibility (EMC), very low standby current, and an analog current-sense pin (IS) for load diagnostics. The exposed thermal pad of the PG-TSDSO-14 package reduces junction-to-ambient thermal resistance, supporting sustained 5 A operation on a 1-square-inch copper pour. Technically, the device combines a charge-pump-driven N-channel MOSFET with an integrated gate driver, an adjustable current-limit block, over-temperature shutdown, reverse-battery protection via the load-side body diode path, and a proportional current-sense output. The 35 mΩ RDS(on) keeps conduction losses at roughly 0.88 W at 5 A, while the slew-rate-controlled turn-on minimises inductive ringing on the load line. Typical applications include 48 V automotive resistive and inductive loads, body electronics modules, auxiliary pumps, PTC heaters, LED drivers, and zone-architecture power distribution in mild-hybrid electric vehicles (MHEV). The wide 8-60 V input range also supports 24 V industrial loads. When designing with this device, place a 100 nF ceramic decoupling capacitor close to the Vbb pin and respect the thermal pad soldering recommendations. Use the IS pin with a ground-referenced resistor to monitor load current; the device is not a hot-swap controller and assumes the load has already been wired before enable. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BTH60702EPVXUMA1 - 60 mΩ Dual High-Side Switch 1.7A | Infineon
The Infineon BTH60702EPVXUMA1 is a 60 mΩ dual-channel smart high-side power switch from the PROFET + 48V family, housed in a PG-TSDSO-14 package with exposed pad. It is rated for 1.7 A continuous current per channel and operates from a 48 V automotive board net, integrating an N-channel vertical power MOSFET with charge pump, comprehensive protection functions, and current-sense diagnosis. A high-side switch is a power distribution switch that sits between the supply rail and the load, allowing the load to be turned on/off by a low-voltage control signal while protecting the wiring harness from faults such as over-current, short-circuit, over-voltage, and reverse battery. Within the broader component taxonomy, the BTH60702EPVXUMA1 sits in the smart high-side switch (intelligent power switch, IPS) family, which descends from discrete MOSFETs and power distribution switches and integrates them with logic, sense, and protection in a single device. This integration reduces PCB area, simplifies wiring harness design, and improves diagnostic coverage in body and powertrain ECUs. Key features include a typical on-state resistance of 60 mΩ per channel, dual independent 1:1 N-channel outputs, current-sense analog feedback for load diagnosis, integrated charge pump for full N-channel drive, and protection against over-load, short-circuit, over-voltage, reverse battery, and thermal shutdown. The PG-TSDSO-14 package with exposed pad provides a low thermal resistance path that sustains 1.7 A continuous per channel in automotive temperature classes. Typical applications include automotive lighting (headlamps, tail lamps, indicator LEDs), resistive and inductive body loads (seat heaters, mirror heaters, washer pumps), 48 V board-net zonal modules, and zone-ECU power distribution in mild-hybrid and 48 V vehicles. The device's current-sense output also enables predictive maintenance and open-load detection at standstill. When designing with this part, ensure that the exposed pad is soldered to a sufficiently large copper area (typically 1 cm² or more) to keep junction temperature within the automotive -40 °C to +150 °C range under worst-case load. The IN pins of both channels should be tied to the same supply; if independent supplies are required, two separate BTH6070-2EPV devices must be used. This page synthesizes distributor stock, drop-in same-family cross-references, and application guidance not found in the manufacturer datasheet alone.
BTH60801EPLXUMA1 - 80mΩ 48V Smart High-Side Switch | Infineon
The Infineon BTH60801EPLXUMA1 is a 80 mΩ single-channel smart high-side power switch housed in a PG-TSDSO-14 package with exposed pad, designed for 48 V automotive board nets. It integrates an N-channel vertical power MOSFET with charge pump, providing 2.5 A continuous load current capability and comprehensive protection functions including adjustable current limitation. A high-side switch is a power distribution topology where the switch sits between the supply rail and the load, enabling ground-referenced loads, inrush-current control, and fault isolation. Within the broader taxonomy, this device belongs to the smart high-side switch family, itself a subcategory of power distribution switches and MOSFET driver ICs used in automotive body electronics and 48 V board-net systems. Key features include an 80 mΩ typical on-state resistance (RDS(on)), a wide operating voltage range of 4 V to 54 V supporting 48 V board nets, and built-in diagnostic feedback through a current sense (IS) pin. The device also offers overtemperature, overvoltage, and undervoltage protection with autorestart behavior, plus active-high and active-low input logic for flexible microcontroller interfacing. The integrated charge pump drives the gate of the N-channel MOSFET above the battery rail, achieving true low-loss high-side switching. The exposed pad on the PG-TSDSO-14 package reduces thermal resistance, enabling continuous load currents up to the rated 2.5 A without external heatsinking in typical automotive ambient conditions. Typical applications include 48 V automotive lighting control, HVAC blower and resistor drives, auxiliary power distribution modules, and zone-ECU load management. The 48 V board-net compatibility makes it particularly suited to mild-hybrid and 48 V-only vehicle subsystems where 12 V legacy switches are inadequate. When designing with this device, ensure the PCB copper pour under the exposed pad is maximized to keep junction temperature within safe limits under sustained 2.5 A loads. The IS pin must be connected to a microcontroller ADC through an external resistor divider matched to the ADC reference voltage. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical 48 V high-side switch design guidance not found in the manufacturer datasheet alone.
BTH61002EPAXUMA1 - 2x 200mOhm 60V 48V Auto High-Side Switch | Infineon
The Infineon BTH61002EPAXUMA1 is a dual-channel (2 x 1:1) N-channel smart high-side power switch in the PROFET + 48V family, housed in a PG-TSDSO-14 exposed-pad package and rated for 2.0A continuous load per channel. It is designed for use in 48V automotive board nets and integrates a vertical N-channel power MOSFET with a charge pump that provides comprehensive protection and diagnostic functions, including current sense, thermal shutdown, and configurable current limitation. What is a smart high-side switch? A smart high-side switch is a semiconductor relay that sits between the supply rail and the load, replacing a mechanical relay or discrete MOSFET plus fuse arrangement. It uses an N-channel MOSFET on the high side and a charge pump to drive the gate above the battery rail, allowing the load to be PWM-controlled and continuously diagnosed for open-wire, short-to-battery, short-to-ground, and overtemperature faults. These devices belong to the power distribution and power management IC hierarchy and are designed specifically for harsh automotive environments, typically qualified to AEC-Q100 and supporting load currents from a few hundred milliamps up to tens of amps. Key features of the BTH61002EPAXUMA1 include a typical on-state resistance of 200 mOhm per channel, a 60V maximum load-dump capability, and a 54V nominal supply rating that makes it compatible with modern 48V mild-hybrid vehicle electrical systems. The device offers active-high and active-low input logic variants, precise current-sense diagnostic output for fault detection, and an adjustable current-limit function that lets the designer trade off transient surge capability against sustained fault current. The BTH61002EPAXUMA1 uses a vertical N-channel power MOSFET architecture combined with an integrated charge pump and CMOS control logic on a single die. The PG-TSDSO-14 package with exposed thermal pad delivers a low junction-to-ambient thermal resistance, allowing sustained 2.0A per channel operation without external heatsinking. Two independent channels share a common supply pin but have separate input, output, and diagnostic pins, making the part functionally equivalent to two single-channel PROFET devices in one footprint. Typical applications include 48V zonal architectures, 48V eBike and mild-hybrid power distribution, body control modules driving lighting and heating loads, and any automotive 48V load requiring diagnostic feedback to the ECU. It is also used in industrial 48V systems where AEC-Q100-grade robustness is desired. When designing with this device, derate the load current with ambient temperature using the SOA curves and ensure the exposed pad is soldered to at least 1 cm² of copper for adequate thermal dissipation. The current-sense pin must be connected to a precise ground-referenced resistor to retain diagnostic accuracy. This page synthesizes distributor pricing, AEC-Q100 packaging variants, and practical 48V board-net design notes that go beyond the manufacturer datasheet to accelerate component selection.
BTH62001ENAXUMA1 - 48V 200mΩ 1.7A Smart High-Side Switch | Infineon
The Infineon BTH62001ENAXUMA1 is a 1-channel automotive PROFET™ + 48V smart high-side switch in a PG-TDSO-8-31 package, integrating a 200 mΩ (typical @ 25 °C) N-channel power MOSFET with comprehensive protection and diagnostic features. It is rated for an operating voltage range of 8 V to 60 V, delivers up to 1.7 A continuous load current, and supports the modern 48 V board-net architectures used in mild-hybrid and high-power auxiliary vehicle systems. A smart high-side switch is a type of power distribution switch (PDS) that replaces an electromechanical relay, fuse and discrete MOSFET circuit by integrating the power transistor, gate driver, current sensing, and protection logic into a single monolithic IC. The PROFET™ + 48V family sits within the broader power management IC hierarchy as a protected power switch IC, which itself falls under the umbrella of automotive power distribution and load-driving semiconductors. This integration reduces PCB area, eliminates wiring harnesses, and provides MCU-readable diagnostics for ISO 26262 functional-safety compliance. Key features of the BTH62001ENAXUMA1 include a 200 mΩ on-state resistance, very low standby current, configurable current-limit and over-temperature shutdown, dedicated fault feedback, and a current-sense pin that delivers a proportional analog output proportional to the load current. The device is AEC-Q100 qualified and ISO 26262-ready, suiting it for safety-relevant automotive loads. PG-TDSO-8-31 is an exposed-pad surface-mount package that keeps RthJA low enough for direct soldering on FR4 without an external heatsink at typical 48 V load currents. Internally, the BTH62001ENAXUMA1 uses a vertical N-channel DMOS output stage driven by a charge-pump gate driver, allowing true high-side switching from a single 48 V supply. The current-sense output is implemented with a sense-FET topology that mirrors a small fraction of the load current, providing accurate diagnosis without a discrete shunt resistor. The protection block includes load-dump survival up to 60 V, reverse-battery robustness, and dynamic thermal protection that folds back current during overheating. Typical automotive applications include 48 V e-fuse replacement, PTC heater driving, electric water pump control, electric turbocharger wastegate actuation, and other resistive, inductive, or capacitive 48 V loads. The active-high/active-low input logic allows direct connection to an automotive MCU or SBC without additional glue logic. For optimal thermal performance, the exposed pad must be soldered to a copper area of at least 1 cm² on the PCB. The BTH62001ENAXUMA1 datasheet is available from Infineon's official product page. When designing with this device, observe the 60 V absolute maximum input rating and provide adequate reverse-battery protection on the supply pin, as automotive 48 V board nets are subject to load-dump transients. The current-sense resistor value should be chosen to keep the sense voltage within the MCU ADC range at the maximum expected load current. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTH62004ESAXUMA1 - 4-Ch 200mΩ 48V Smart High-Side Switch | Infineon
The Infineon BTH62004ESAXUMA1 is a 4-channel smart high-side power switch from the PROFET+ 48V family, providing four independent N-channel vertical power MOSFET outputs with 200 mΩ on-state resistance per channel in a PG-TSDSO-24-21 exposed-pad package. Each channel delivers 1 A continuous load current and is designed for 48 V automotive board nets, with comprehensive protection functions including current sense diagnosis, over-temperature shutdown, over-voltage clamp, and reverse-battery robustness. The device is qualified for automotive use and targets 48 V mild-hybrid and board-net applications where multiple resistive or inductive loads must be driven independently with diagnostic feedback. A high-side smart switch is a type of power distribution switch that sits between the supply rail and the load, integrating the power MOSFET, gate driver, protection circuitry, and diagnostic feedback into one IC. High-side switches belong to the broader power management semiconductor category, which also includes low-side switches, half-bridges, and H-bridges. Compared with discrete MOSFETs plus fuses, a smart high-side switch reduces PCB area, eliminates the need for external protection components, and provides the ECU with real-time load-current and fault-status information through the IS pin. Key features include 200 mΩ typical RDS(on) per channel at 25 °C, 1 A nominal load current per channel, integrated charge pump for full N-channel drive, current sense ratio with high accuracy, and programmable restart behavior after fault clearing. The PG-TSDSO-24-21 package uses an exposed thermal pad that reduces junction-to-PCB thermal resistance, allowing the four channels to operate at full current without external heatsinking in typical automotive body-control environments. The architecture combines an N-channel vertical power MOSFET with a charge pump, logic interface, and dedicated protection/diagnosis state machine per channel. The device is optimized for 48 V systems but tolerates load-dump transients above 60 V, making it suitable for both 24 V and 48 V board nets in commercial vehicles, mild hybrids, and 48 V zonal architectures. Typical applications include 48 V body-control modules driving LED arrays, small motors, and resistive heaters, as well as zonal ECUs in 48 V mild-hybrid vehicles. The four independent channels make it suitable for driving four separate loads from one compact IC, reducing BOM count and ECU footprint. When designing with the BTH62004ESAXUMA1, ensure the exposed pad is soldered to a sufficient copper pour to keep junction temperature within the -40 °C to +150 °C operating range. The IS pin must be connected to a microcontroller ADC through a recommended filter network for accurate current-sense readings, and unused channels should be tied to GND with IN off. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
BTM9011EPXUMA1 - 10A Full-Bridge Motor Driver, 7-18V | Infineon
The Infineon BTM9011EPXUMA1 is a 10 A full-bridge motor driver IC with integrated power MOSFETs and SPI interface, housed in a 14-pin PG-TSDSO-14 package with exposed pad for enhanced thermal performance. The device integrates a monolithic BCD (Bipolar-CMOS-DMOS) full-bridge designed for automotive motor drive applications such as door locks, latches, and small DC brushed-motor loads. A full-bridge motor driver IC (also known as an H-bridge) is a topology that uses four switching elements arranged in an H configuration to drive a DC or bipolar stepper motor in both directions from a single supply rail. The full-bridge sits within the broader hierarchy: motor driver IC -> motion controller -> power management IC -> semiconductor. By integrating the four MOSFETs plus gate drive, charge pump, current sense, and protection into one monolithic die, the BTM9011EPXUMA1 eliminates dozens of discrete components that an equivalent discrete solution would require. Key features include a typical path resistance of 175 mΩ at 25 °C, pulse current capability of 5.2 A for tpulse ≤ 1 s at 85 °C (4.2 A for tpulse ≤ 10 s at 85 °C), a normal supply voltage range of 7 V to 18 V with an extended range of 4.5 V to 40 V, and a minimum current limitation. PWM operation is supported up to 20 kHz. The SPI interface enables diagnostic readout and parameter configuration, while the integrated protection set includes overtemperature, overcurrent, and undervoltage lockout. The device is implemented in BCD technology and qualified to AEC-Q100 for automotive use. Compared with discrete MOSFET bridges, the integrated full-bridge cuts PCB area by roughly 60%, reduces parasitic loop inductance, and simplifies EMI compliance thanks to tighter gate-driver timing and shorter power paths. Typical applications include automotive door-lock actuators, trunk latches, fuel-flap actuators, seat adjusters, mirror-fold motors, and HVAC flap control. The combination of 10 A current limit, 20 kHz PWM, and SPI diagnostics makes the part well suited to body-electronics modules that must report fault status to a central ECU. When designing with this part, place a low-ESR 100 nF + 10 µF ceramic bypass on VS as close to the IC as possible, and tie the exposed pad to a continuous ground copper pour of at least 100 mm² to stay within the thermal envelope at full 10 A load. The SPI bus should be pulled up to VIO and isolated from the motor phase traces with a ground guard ring to avoid conducted-noise coupling during PWM transitions.
BTM9020EPXUMA1 - Full-Bridge 20A Motor Driver IC | Infineon MOTIX
The Infineon BTM9020EPXUMA1 is a fully integrated full-bridge driver IC designed for brushed DC (BDC) motors, housed in a PG-TSDSO-14 package. It combines four power MOSFETs in an H-bridge topology with integrated charge pump and PWM control, delivering typical path resistance of 84 mΩ at 25 °C and supporting a supply voltage range of 7 V to 18 V (extended 4.5 V to 40 V). Pulse current capability reaches 8.8 A for pulses ≤ 1 s at 85 °C and 6.9 A for pulses ≤ 10 s at 85 °C, making it well suited to locks, latches, and small body-motor loads. A brushed DC motor driver is an integrated power stage that switches the polarity of voltage across a DC motor winding to control direction, speed, and torque. It belongs to the broader family of motor-driver ICs, which sit hierarchically below power management ICs and alongside gate drivers, half-bridge drivers, and three-phase motor drivers. The full-bridge (H-bridge) topology in particular enables bidirectional control of a single winding using only two logic-level inputs, eliminating the need for external discrete MOSFETs and gate-drive circuitry. Key features include a 20 A current limit, 20 kHz PWM frequency for quiet operation, built-in protection (overcurrent, overtemperature, undervoltage), and a logic-level interface compatible with 3.3 V and 5 V microcontrollers. The exposed pad of the PG-TSDSO-14 package provides a low thermal resistance path, enabling sustained high-current operation on a standard FR-4 PCB. Architecturally, the BTM9020EPXUMA1 uses four N-channel power MOSFETs in an H-bridge driven by an internal charge pump that generates the high-side gate supply. The integrated charge pump eliminates external capacitors for the high-side drive, simplifying PCB layout and reducing BOM cost. This makes the device a true single-chip motor driver solution for space-constrained automotive body-electronics modules. Typical applications include automotive door-lock and door-latch actuators, sunroof and window-lift motors, mirror-adjust actuators, and other small BDC motors in body-electronics systems. The AEC-Q100 qualification and wide supply-voltage range make it especially suitable for 12 V automotive board nets and 24 V truck systems. When designing with this part, ensure adequate copper area under the exposed thermal pad for heat dissipation, and place the supply bypass capacitor as close as possible to the VBB pin. The logic inputs are TTL-compatible but should be kept clean to avoid spurious direction changes during PWM transitions. This page synthesizes Infineon distributor pricing, drop-in MOTIX-family alternatives, and practical PCB design notes not found in the manufacturer datasheet alone, helping sourcing engineers select a verified replacement and helping design engineers shorten first-pass bring-up.
BTM9021EPXUMA1 - 8.8A Full-Bridge BDC Motor Driver | Infineon
The Infineon BTM9021EPXUMA1 is a fully integrated full-bridge motor driver IC for brushed DC (BDC) motors, delivering up to 8.8 A pulse current (tpulse <= 1 s at 85 °C) and 6.9 A continuous pulse current (tpulse <= 10 s at 85 °C) in a 14-pin PG-TSDSO package with exposed pad. It features a typical path resistance of 84 mΩ at 25 °C, an SPI diagnostic interface, and AEC-Q100 qualification for automotive applications. What is a brushed DC motor driver? A brushed DC motor driver is an integrated power stage that switches the current through a BDC motor's windings using internal MOSFETs in an H-bridge topology. It belongs to the motor-driver category within power management and power-semiconductor ICs, sitting hierarchically under power management IC -> motor driver -> brushed DC motor driver -> integrated full-bridge. By integrating four power MOSFETs, gate drivers, protection, and (in this case) an SPI configuration/diagnostic interface, the part eliminates the need for discrete H-bridges, optocouplers, and external current-sense amplifiers. Key features include a normal supply voltage range of 7 V to 18 V and an extended supply range of 4.5 V to 40 V for cold-crank and load-dump survival in 12 V automotive systems. Integrated protection covers overtemperature, overcurrent, undervoltage, and short-circuit conditions. The SPI interface provides status feedback, PWM control configuration, and current-limit adjustment. Typical path resistance of 84 mΩ at 25 °C keeps conduction losses low, enabling higher continuous current from a thermally limited 14-pin exposed-pad TSSOP. Technically, the BTM9021 uses an N-channel MOSFET H-bridge driven by a charge-pump-generated gate supply. The device supports PWM frequencies up to the limit defined in the datasheet and offers configurable slew-rate control to trade EMI against switching losses. The internal current limit is programmable via SPI, and the diagnostic register reports fault flags such as open-load, short-to-ground, and overtemperature pre-warning. Typical applications include automotive throttle-body actuators, HVAC blower motors, fuel-pump drivers, and small body-comfort loads such as seat-position adjusters and mirror-fold mechanisms. Industrial uses include 24 V valve actuators and small robotic drives. The AEC-Q100 grade makes it especially well suited for under-the-hood and body-electronics modules where the supply rail experiences cranking transients. When designing with the BTM9021, observe the thermal limits of the PG-TSDSO-14 package. At 8.8 A pulse and a VIN of 13.5 V, the H-bridge conduction loss is roughly (2 x 84 mΩ) x I² per MOSFET pair; sufficient copper on the exposed pad is essential. The 4.5 V to 40 V extended range allows direct connection to a 12 V automotive bus with no pre-regulation. This page synthesizes distributor pricing, AEC-Q100 drop-in alternatives, and PG-TSDSO-14 thermal design notes that go beyond the manufacturer datasheet's headline specs, giving a one-stop engineering reference for motor-drive selection.
BTN8982TAAUMA1 - 55A Half-Bridge Motor Driver, 40V | Infineon
The Infineon BTN8982TAAUMA1 is an integrated high-current half-bridge motor driver from the NovalithIC family, rated for 40 V operation and 55 A peak current, housed in a 7-pin PG-TO263-7-1 (D2PAK with tab) surface-mount package. It combines a P-channel high-side MOSFET, an N-channel low-side MOSFET, and a fully integrated driver IC in a single exposed-tab package, providing a complete half-bridge that requires only an external logic signal for PWM control of brushed DC and BLDC motors. A half-bridge driver is a power-stage building block that uses one high-side and one low-side switch to drive a motor terminal from a single DC rail. Two BTN8982TA devices are commonly paired to form a full H-bridge for bidirectional brushed DC motors, or used in three-phase configurations for BLDC motors. Half-bridge drivers belong to the broader category of motor/Motion/Ignition PMICs (Power Management ICs), which sit under the umbrella of integrated power semiconductors and motor-driver ICs. Key features of the BTN8982TA include: 5.5 V to 40 V supply voltage range, 50 A nominal continuous load current, integrated charge pump for the high-side gate drive, current-limit protection set around 55 A, status flag output, slew-rate-adjustable switching, and over-temperature shutdown. The NovalithIC construction eliminates the need for an external bootstrap capacitor or gate-drive supply, simplifying PCB layout compared to discrete MOSFET half-bridges. The architecture integrates a charge pump, level shifter, gate drivers, dead-time generation, current sense, and protection logic on the same silicon as the power MOSFETs. This co-integration reduces parasitic inductance between driver and FET, lowering switching losses and improving EMI performance versus discrete solutions, at the cost of a fixed set of protection features that cannot be user-programmed. Typical applications include brushed DC motors in automotive body electronics (e.g., window lift, seat adjust, sunroof), e-bike and e-scooter traction drives, industrial pumps and fans, robotic actuators, and small BLDC motor control where two or three BTN8982TA devices form a complete inverter. The 40 V rating suits 12 V and 24 V automotive bus systems with generous transient margin. When designing with the BTN8982TA, ensure the exposed thermal pad is soldered to a sufficiently large copper pour - the device is capable of dissipating tens of watts under stall conditions. Add adequate bulk capacitance on the supply rail and follow Infineon reference layout recommendations to keep switching transients within EMI limits. This page synthesizes distributor pricing, drop-in NovalithIC alternatives, and practical design notes that go beyond the bare manufacturer datasheet.
BTN9960LVAUMA1 - 9.7mOhm 35A Half-Bridge Motor Driver | Infineon
The Infineon BTN9960LVAUMA1 is an integrated high-current half-bridge motor driver from the MOTIX (NovalithIC) family, featuring a P-channel high-side MOSFET and an N-channel low-side MOSFET co-packaged with a driver IC in a PG-HSOF-7-1 surface-mount package. It delivers a typical path resistance of 9.7 mOhm, supports up to 35 A overcurrent detection, and operates from a supply voltage range of 8 V to 18 V (with maximum ratings extending to 40 V), making it ideal for 12 V DC motor drive applications. What is a half-bridge motor driver? A half-bridge is the fundamental switching element in DC motor control, consisting of one high-side and one low-side switch that alternately connect a motor terminal to the supply rail or to ground. By PWM-modulating the switching, the average voltage applied to the motor (and therefore its speed and torque) is controlled. The BTN9960LVAUMA1 is part of a wider product taxonomy: half-bridge driver -> integrated motor driver -> motor control IC -> power management IC -> semiconductor. Two such half-bridges can be combined externally to drive a brushed DC motor in H-bridge configuration, or three are used for brushless DC (BLDC) motor commutation. Key features include AEC-Q100/Q006 qualification at Grade 1 for automotive use, integrated under-voltage, over-current, short-circuit, and over-temperature protection, dead-time control, and an enable/shutdown input. The P-channel high-side switch eliminates the need for a charge pump, reducing EMI and simplifying PCB layout. Logic-level inputs interface directly with microcontrollers, and the device includes interleaved conduction (shoot-through) protection to safeguard against cross-conduction events. The BTN9960LVAUMA1 leverages Infineon's proprietary NovalithIC three-chip integration: the high-side PMOS, low-side NMOS, and a smart driver IC are co-packaged to minimize parasitic inductance and maximize power density. With operating junction temperatures from -40C to +150C, it suits under-hood automotive and industrial environments. The exposed pad package provides a low thermal resistance path for high-current switching applications. Typical applications include 12 V brushed DC motor drivers for automotive body electronics (window lift, sunroof, seat adjustment, fans, pumps), electric power steering (EPS) auxiliary systems, industrial actuators, e-bike controllers, and small BLDC motor driver stages. It is also used in relay replacement, solenoid driving, and high-current LED arrays where PWM dimming is required. When designing with this device, ensure that the PG-HSOF-7-1 thermal pad is soldered to a sufficiently large copper pour to keep junction temperature within safe limits under sustained load. The enable pin should be controlled cleanly to avoid spurious switching, and the dead-time logic must be respected in external H-bridge configurations. Pair with a microcontroller such as Infineon TLE987x or AURIX for automotive motor control. This page synthesizes distributor pricing from DigiKey, Mouser, LCSC, and Octopart, plus drop-in MOTIX alternatives, comparison tables, and practical design notes not found in the manufacturer datasheet.
BTN9970LVAUMA1 - Integrated Half-Bridge 9.7mΩ 60A NovalithIC+ | Infineon
The Infineon BTN9970LVAUMA1 is an integrated high-current half-bridge from the NovalithIC+ family, combining one p-channel high-side MOSFET and one n-channel low-side MOSFET with a monolithic driver IC in a single PG-HSOF-7-1 surface-mount package. It targets PWM-controlled brushed DC motor drive applications up to 60 A peak current, with a typical R_DS(on) of 9.7 mΩ per switch leg. What is a NovalithIC? A NovalithIC is Infineon's category of integrated power half-bridges that co-package the high-side switch, low-side switch, gate driver, and protection logic into one thermally efficient package. The use of a p-channel high-side MOSFET eliminates the need for an external charge pump, which simplifies PCB layout and minimizes electromagnetic emissions compared to traditional n-channel high-side designs. Within the broader taxonomy, NovalithIC+ parts sit between discrete MOSFET half-bridges and full H-bridge motor driver ICs. Key features include a 9.7 mΩ typical on-state resistance per MOSFET, integrated current sensing with 60 A detection capability, built-in protection (overtemperature, overcurrent, undervoltage, short-circuit), and direct logic-level PWM inputs. The package exposes the source pads for direct PCB cooling, eliminating external heatsinks in many 12 V motor applications. From an architectural standpoint, the BTN9970LV integrates the charge-pump-free p-channel high-side to reduce quiescent power and EMI. The on-chip current sense resistor (or shunt emulation) feeds an IS pin proportional to load current, enabling closed-loop torque control without external shunts. Logic inputs are TTL-compatible and accept 3.3 V or 5 V microcontroller signals. Typical applications include brushed DC motor control in 12 V automotive subsystems (HVAC blowers, fuel pumps, window lifters), small industrial pumps and valves, robot actuators, and battery-powered tools. The wide operating voltage range (typically 5 V to 28 V, with transient tolerance up to 40 V) also supports 24 V industrial rails. Designers should observe the PG-HSOF-7-1 land-pattern geometry with sufficient copper area on both drain pads for continuous high-current operation. The exposed lead-frame pads must be soldered to the PCB for both electrical grounding and thermal dissipation. According to the Infineon datasheet, derating begins above 25 A continuous per leg without additional cooling. This page synthesizes distributor pricing from 7 distributors, same-brand drop-in alternatives in the same NovalithIC+ family, and practical PCB/thermal design notes not found in the manufacturer datasheet alone.
BTN9990LVAUMA1 - 60V Half-Bridge Motor Driver | Infineon
The Infineon BTN9990LVAUMA1 is a 60 V integrated high-current half-bridge driver housed in a PG-HSOF-7-1 exposed-pad SMD package. It combines one low-RDS(on) N-channel power MOSFET per switch position with gate-drive, charge-pump, and protection logic to drive brushed DC motors, solenoids, and other inductive loads up to tens of amps continuous. The part is part of Infineon's MOTIX™ family of integrated half-bridge products designed for space-constrained automotive and industrial power switching. A half-bridge is a power-electronics topology that switches a load between a high-side supply rail and ground using two MOSFETs in a push-pull arrangement; the half-bridge is the building block of H-bridge DC motor drivers, three-phase BLDC inverters, and synchronous buck converters. By integrating the power stage into a single exposed-pad package, the BTN9990LVAUMA1 reduces PCB area, simplifies thermal design, and minimizes parasitic loop inductance that otherwise causes voltage overshoot during switching. Key features of the BTN9990LVAUMA1 include integrated charge-pump for 100% duty-cycle high-side operation, under-voltage lockout (UVLO) on both the logic and gate-drive supplies, over-current protection, and an exposed thermal pad that delivers a low thermal resistance to the PCB copper pour. Logic-level inputs interface directly to 3.3 V or 5 V microcontrollers, eliminating the need for external level shifters in most 12 V automotive applications. Typical applications include brushed DC motor control in automotive body modules (window lift, seat adjustment, tailgate), industrial relay and solenoid replacement, LED driver power stages, and small BLDC half-bridge stages where each phase is built from two of these parts. The exposed-pad package allows the heat of the switching losses to be conducted directly into the PCB copper, removing the need for an external heatsink in most well-designed boards. When designing with this device, follow Infineon's PG-HSOF-7-1 PCB layout recommendations: place input and motor ceramic bypass capacitors as close to the package as possible, and provide at least 6 cm² of 2 oz copper on the opposite side of the board tied to the exposed pad. The motor supply (VS) and logic supply (VCC) should be decoupled separately to prevent logic reset during motor current transients.
BTS118DATMA1 - 42V 2.4A Smart Low-Side Switch | Infineon
The Infineon BTS118DATMA1 is a 1-channel smart low-side power switch built on Smart SIPMOS vertical N-channel MOSFET technology, delivering up to 2.4A continuous drain current at up to 42V load supply voltage in a PG-TO252-3-11 (DPAK) surface-mount package. It integrates an N-channel vertical power FET with embedded protection functions including ESD input protection, thermal shutdown with auto-restart, overload protection, short-circuit protection, overvoltage protection (against Vbb transients) and current limitation. A Smart SIPMOS low-side switch is a monolithic power IC that combines a vertical power MOSFET with logic-level gate drive and on-chip protection circuitry, allowing a microcontroller GPIO to directly switch DC loads such as solenoids, lamps, relays and motors without a discrete MOSFET, gate resistor or external freewheeling diode. The BTS118D is the single-channel logic-level variant of the BTS118 family, optimized for 12V and 24V automotive and industrial power distribution rails. Key features include a logic-level CMOS-compatible input, very low standby current, status feedback through the open-drain IN/output pin, and electromagnetic compatibility (EMC) characteristics tuned for automotive environments. The PG-TO252-3-11 (DPAK) package provides a low thermal resistance path that supports the part's continuous load-current rating. Green-product (RoHS-compliant) lead-free plating rounds out the feature set. The vertical SIPMOS process delivers a low typical on-state resistance versus earlier lateral smart switches, reducing conduction losses and improving thermal margin in continuous-duty applications such as LED driver modules and resistive heating elements. The integrated charge pump referenced to Vbb holds the gate enhancement during PWM operation, and the auto-restart thermal shutdown permits the part to resume normal operation after the junction cools, eliminating the need for manual reset logic. Typical applications include automotive body electronics (door modules, seat controllers, mirror heaters), 24V industrial automation loads, programmable logic controller (PLC) digital outputs, solenoid and valve drivers, LED lighting modules, and any 12V/24V resistive or inductive load requiring protection against shorts, overloads and thermal faults. When designing with this device, place the device's tab on a copper pad sized for the expected worst-case dissipation, route the high-current load return directly to the source tab, and add a reverse-battery protection element (such as a smart high-side or schottky diode) at the supply rail because the BTS118D switches the low side of the load. This page synthesizes distributor pricing, parametric comparison, drop-in compatible alternatives and practical PCB layout guidance that go beyond the manufacturer datasheet's typical application section.
BTS134DATMA1 - 42V 3.5A Smart Low-Side Power Switch | Infineon
The Infineon BTS134DATMA1 is an N-channel vertical power FET built on Infineon's Smart SIPMOS technology, configured as a single-channel low-side power switch with a continuous drain current rating of 3.5 A and an operating voltage of 42 V, housed in a PG-TO252-3-11 surface-mount package (DPAK with 2 leads + tab). It belongs to the HITFET family of protected switches designed for 12 V automotive and industrial loads. A low-side power switch (also called a low-side driver or smart switch) is a discrete or integrated MOSFET placed between the load and ground. It is one of the two fundamental topologies used to drive resistive or inductive loads; the complementary topology is the high-side switch (switch between supply and load). Low-side switches are simpler, cheaper, and have a true ground-referenced source, but they require the load to be tied directly to the battery/rail. Smart low-side switches add on-chip protection (overload, short-circuit, overvoltage, thermal shutdown, ESD), eliminating discrete protection circuitry and reducing PCB area. This places the BTS134DATMA1 inside the broader hierarchy: discrete MOSFET -> protected/MOSFET -> power distribution switch -> power management IC -> semiconductor. Key features include logic-level input (compatible with 3.3 V and 5 V microcontrollers), embedded ESD protection on the input pin, thermal shutdown with auto-restart, current limitation, overload protection, short-circuit protection, and overvoltage (load-dump) protection. The PG-TO252-3-11 package exposes the drain tab for direct PCB heatsinking, supporting sustained currents up to 3.5 A without an external heatsink. The Green product designation confirms RoHS compliance. Technically, the BTS134DATMA1 uses a vertical DMOS structure to achieve low on-state resistance (RDS(on)) per unit area, and integrates a charge pump, gate driver, and protection state machine on the same die. Logic-level input thresholds eliminate the need for a gate-driver pre-stage, allowing direct connection to a GPIO. Self-resetting thermal shutdown protects the die at junction temperatures above the shutdown threshold, while current-limit and short-circuit protection safeguard the FET during load faults. Typical applications include 12 V automotive lamp drivers (incandescent, halogen, LED), solenoid and valve drivers, small DC motor drivers, relay replacement, and general-purpose low-side switching in industrial PLCs and home appliances. The device is AEC-Q100 qualified, making it suitable for harsh underhood and body-electronics environments. When designing with this part, keep the load return isolated from the MCU ground only if the load itself can tolerate it; otherwise return the load directly to the battery ground. Add sufficient copper area on the drain tab to keep the junction below the thermal-shutdown threshold during inrush events such as cold-lamp filament turn-on or motor start-up. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS3011TEATMA1 - 11mΩ Smart Low-Side Switch, 10A, 28V | Infineon
The Infineon BTS3011TEATMA1 is an 11 mΩ single-channel Smart Low-Side Power Switch housed in a PG-TO252-5 (DPAK) package, providing embedded protective functions and qualified to AEC-Q100 for automotive use. Key specifications include a 10 A continuous load current, a 3 V to 28 V operating voltage range, and a built-in N-channel vertical power MOSFET that delivers low R_DS(on) for high-efficiency switching. The device integrates current limiting, over-temperature shutdown, over-voltage clamp, ESD protection, and a diagnostic status feedback pin. A Smart Low-Side Power Switch is a semiconductor that controls a load by switching the ground return path rather than the supply rail, providing a cost-effective way to drive resistive or inductive loads such as solenoids, valves, lamps, relays, and LED strings. The category sits within Power Distribution Switches > Load Drivers in the broader PMIC taxonomy, and combines a power MOSFET with protection and diagnostic logic into a single IC - eliminating the need for discrete protection circuitry around a bare MOSFET. Low-side switches are favored when the load is referenced to a common chassis ground and when fast demagnetization of inductive loads is required through active freewheeling. Differentiating features include 11 mΩ typical on-resistance at 25 °C, ±8 kV HBM ESD robustness on the output pin, an operating junction temperature range of -40 °C to +150 °C, and a logic-level CMOS-compatible input. The integrated inverse-current protection and ground-loss protection improve fault tolerance on automotive wiring harnesses where shorts to ground or battery are common. The 5-pin DPAK footprint provides a tab for low thermal resistance, enabling continuous 10 A operation without external heatsinking on typical 1 oz copper PCB areas. The device is built on Infineon's proprietary N-channel vertical power MOSFET process, optimized for low on-resistance per unit area in the 30 V class. Internal charge pump and gate driver circuitry ensure full enhancement of the power stage even at low battery voltages down to 3 V during cranking transients. A status flag pin provides open-drain feedback for fault detection by an external microcontroller. Typical applications include automotive body electronics (door lock actuators, mirror heaters), 12 V LED lighting modules, relay and solenoid replacement in HVAC and powertrain ECUs, and industrial 24 V load switching. The AEC-Q100 Grade 1 qualification makes it suitable for under-hood and chassis-mounted modules exposed to wide temperature swings. When designing with this device, ensure that the load's inrush current does not exceed the inrush current limit, and that adequate copper area is provided on the drain tab for thermal dissipation. The input pin must be driven from a microcontroller GPIO capable of sourcing the pull-up current; a series resistor may be required to limit inrush into the logic input. This page synthesizes distributor pricing, drop-in Infineon family alternatives, and practical design notes for automotive low-side switching that complement the manufacturer datasheet.
BTS3028SDLATMA1 - 5A Low-Side Smart Switch | Infineon
The Infineon BTS3028SDLATMA1 is a single-channel, low-side N-channel MOSFET power switch in the PG-TO252-3-11 (DPAK) package, rated for 5 A continuous load current. It integrates the power FET and a complete set of embedded protection functions — including overtemperature shutdown, overvoltage clamp, ESD protection, and current limitation — making it a member of Infineon's HITFET™ 24V family of automotive-grade smart low-side switches. A low-side switch is a power switch placed between the load and ground, allowing the load to be grounded on one terminal. Smart low-side switches integrate the MOSFET and protection logic into a single IC, replacing discrete MOSFET-plus-driver solutions. They sit hierarchically within the broader category of power distribution switches, which are sub-classes of power management ICs used in 12 V/24 V automotive and industrial buses. Key specifications include an operating voltage range of 2 V to 10 V (load supply), a typical on-state resistance of 28 mΩ at 25 °C, continuous drain current up to 5 A, and a junction temperature range of -40 °C to +150 °C. The device is AEC-Q100 qualified for automotive environments and offers status feedback via a STATUS pin, supporting fault detection and load diagnostics. Its monolithic integration reduces PCB area versus a discrete MOSFET plus a fuse or external current-sense circuit. Typical applications include automotive body and chassis loads (lighting, solenoids, motors), industrial 24 V relay and valve drivers, PLC digital outputs, and any 12 V/24 V load requiring resettable overcurrent protection. The device is particularly useful where a fuse-replacement function is desired, since its current limit and thermal shutdown provide automatic fault recovery without fuse replacement. When designing with this part, observe the SOA limits in the datasheet, ensure the STATUS pull-up is correctly biased, and provide sufficient copper area on the tab for heatsinking. Compared with discrete MOSFETs, the integrated protection reduces BOM count, but the on-resistance is higher than the lowest-RDS(on) discrete parts — a trade-off in favor of protection and diagnostic features. This page synthesizes distributor pricing across six channels, drop-in alternatives in the same DPAK footprint, and practical design notes for both automotive and industrial 24 V buses — practical context not found in the manufacturer datasheet alone.
BTS3028SDRATMA1 - 5A Smart Low-Side Switch, 28mΩ | Infineon
The Infineon BTS3028SDRATMA1 is a 5 A single-channel smart low-side N-channel MOSFET power switch in the PG-TO252-3-11 (DPAK) surface-mount package with an on-resistance of 28 mΩ (RDS(ON), typ.) and built-in protective functions. Housed in a 3-pin (2 leads + tab) DPAK/TO-252 package, this part belongs to Infineon's HITFET™ Smart Low-Side family and is qualified for automotive 12 V systems, with a 60 V load-dump rating and operating supply voltage up to 28 V (typical 13.5 V). A smart low-side switch is a power semiconductor IC that integrates a vertical power MOSFET, gate driver, and embedded protection circuitry into a single die. In the broader system taxonomy, the BTS3028SDR sits below discrete N-channel MOSFETs and above simple relay or fuse solutions, providing controlled load switching with diagnostic feedback. Low-side switches are placed between the load and ground (rather than between supply and load), which simplifies gate drive and current sensing. Key embedded features include overtemperature shutdown with auto-restart, overvoltage clamp (including load-dump), ESD protection on the input and output pins, short-circuit detection with current limiting, and an open-drain status flag output. The device also integrates reverse-battery protection and a ground-loss safe shutdown sequence, addressing the harsh electrical environment typical of automotive wiring harnesses. The BTS3028SDR uses a monolithic vertical N-channel MOSFET with charge-pump gate drive, giving it a low typical RDS(ON) of 28 mΩ at room temperature and very low standby current. Logic-level IN input enables direct 3.3 V or 5 V microcontroller GPIO control without additional driver stages. The integrated protections shorten the bill of materials compared to discrete FET + TVS + fuse solutions and improve reliability under fault conditions. Typical applications include automotive body electronics (lighting, seat control, door locks, mirror heaters), 24V industrial load driving, relay and solenoid replacement, and any 12V/24V load-switching function where diagnostics and protection are required. The part is qualified to AEC-Q100 and is well-suited for driving resistive, inductive, and capacitive loads including LED strings, DC motors, and heaters. When designing with this device, derate RDS(ON) for the expected operating temperature (it roughly doubles from 25 °C to 150 °C) and ensure the PCB footprint dissipates heat adequately - the DPAK tab should be soldered to a copper area of at least 1 cm². The status output requires a pull-up resistor; the IN pin should be debounced if connected to mechanical switches or wired harnesses. This page synthesizes distributor pricing, drop-in alternative listings, and practical design notes not found in the manufacturer datasheet.