1ED020I12B2XUMA1 vs 1ED3142MU12FXUMA1 비교

다음의 상세 나란히 비교: 1ED020I12B2XUMA1 제조: Infineon 및 1ED3142MU12FXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 1ED020I12B2XUMA1 1ED3142MU12FXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.65 $0.94
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) Coreless Transformer (CT)
Isolation Voltage (Vrms) 4500 Vrms —
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
패키지 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8-72 (wide-body DSO-8)
Creepage Distance 8 mm —
동작 온도 -40 °C to +125 °C —
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL-3 (per JEDEC J-STD-020) —
Compliance RoHS compliant —
Product Type — Galvanically Isolated Gate Driver IC
Peak Source/Sink Output Current — 6.5 A (typical)
Isolation Voltage (DigiKey rating) — 3000 Vrms
Isolation Voltage (Manufacturer datasheet) — 2300 V
Output Supply Voltage (VCC2-VEE2) — [DATA_NEEDED: max value, typical datasheet 25 V max]
Input Supply Voltage (VCC1) — [DATA_NEEDED: value]
Propagation Delay (typical) — 42 ns
Target Power Switches — SiC MOSFETs, IGBTs, MOSFETs
동작 온도 범위 — [DATA_NEEDED: junction/ambient range]
Protection Features — UVLO (output-side), DESAT short-circuit detection
Output Stage — Separate source/sink pins, totem-pole
RoHS 상태 — Compliant
Family — Infineon EiceDRIVER 1ED31xx

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