1ED020I12B2XUMA1 vs 1EDI20I12MFXUMA1 비교

다음의 상세 나란히 비교: 1ED020I12B2XUMA1 제조: Infineon 및 1EDI20I12MFXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ 활성

사양 비교

파라미터 1ED020I12B2XUMA1 1EDI20I12MFXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.65 $1.84
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) —
Isolation Voltage (Vrms) 4500 Vrms —
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns 300 ns
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
패키지 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8-51 (8-pin DSO, 4 mm creepage)
Creepage Distance 8 mm —
동작 온도 -40 °C to +125 °C [DATA_NEEDED: operating temperature range]
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL-3 (per JEDEC J-STD-020) —
Compliance RoHS compliant —
기능 — Isolated single-channel high-side gate driver
Isolation Type — Galvanic (coreless transformer)
Output Current (Source/Sink) — 2 A peak
Active Miller Clamp Current — 2 A
Maximum Operating Voltage (Switch side) — 1200 V
Input Logic — Inverting / Non-inverting
출력 구성 — Single high-side driver
Minimum Creepage — 4 mm
Short Circuit Protection — Yes (clamping)
Supply Voltage (Secondary) — [DATA_NEEDED: secondary supply voltage range]
CMTI — [DATA_NEEDED: common-mode transient immunity]
UVLO — Yes (secondary side)
RoHS 상태 — Compliant

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