1ED3890MC12MXUMA1 vs 1ED020I12B2XUMA1 비교

다음의 상세 나란히 비교: 1ED3890MC12MXUMA1 제조: Infineon 및 1ED020I12B2XUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 1ED3890MC12MXUMA1 1ED020I12B2XUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $4.30 $2.65
Isolation Voltage (Vrms) 5700 Vrms 4500 Vrms
Peak Output Current (Source/Sink) ±9 A —
Number of Channels 1 1
출력 구성 High-Side Non-Inverting —
패키지 PG-DSO-16-28 (16-pin wide-body DSO) PG-DSO-16-15 (300 mil wide-body DSO-16)
실장 유형 Surface Mount (Tape & Reel) Surface Mount
Isolation Technology Coreless transformer (galvanic) Coreless transformer (magnetic coupling)
Configurable Interface I2C (DESAT, UVLO, drive voltage) —
Protection Features DESAT short-circuit, Active Miller clamp, Soft Turn-Off (STO), UVLO —
Target Power Devices IGBT, SiC MOSFET, MOSFET —
동작 온도 범위 [DATA_NEEDED: operating temperature range] —
Propagation Delay [DATA_NEEDED: typical propagation delay] —
Common-Mode Transient Immunity (CMTI) [DATA_NEEDED: CMTI rating] —
Supply Voltage (VCC side) [DATA_NEEDED: VCC range] —
Output Drive Voltage (VOUT) [DATA_NEEDED: VOUT range] —
RoHS 상태 Compliant —
MSL 레벨 [DATA_NEEDED: MSL rating] MSL-3 (per JEDEC J-STD-020)
Lead-Free Yes —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
동작 온도 — -40 °C to +125 °C
Compliance — RoHS compliant

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