2EDL8034G4CXTMA1 vs 1EBN1001AEXUMA1 비교

다음의 상세 나란히 비교: 2EDL8034G4CXTMA1 제조: Infineon 및 1EBN1001AEXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 2EDL8034G4CXTMA1 1EBN1001AEXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.55 $4.41
Driver Type Half-Bridge (High-Side / Low-Side) —
Configuration Non-Inverting High-Side / Low-Side (non-inverting booster)
Bootstrap Voltage (Max) 120 V —
Peak Source Current 3 A —
Peak Sink Current 4 A —
출력 수 2 2 (separate source and sink paths)
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V —
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) —
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
동작 접합 온도 -40 C to +125 C —
패키지 PG-VDSON-10-2 (DSN-10) with exposed pad PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel)
실장 유형 Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
MSL 레벨 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Product Type — Isolated single-channel IGBT/MOSFET gate driver booster
Series — EiceDRIVER™ Boost (1EBN family)
Peak Output Current — ±15 A
Number of Drivers — 1
Input Signal — ASC input, active-clamping disable
Active Clamping — Yes (very fast reaction time)
동작 온도 — -40 °C to +125 °C (automotive grade)
Automotive Qualification — AEC-Q100 qualified
RoHS 상태 — Compliant
Target Switching Stage — Motor drives > 10 kW (up to 400 A modules)

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