2SJ74-BL vs 2SJ74 비교

다음의 상세 나란히 비교: 2SJ74-BL 제조: Toshiba 및 2SJ74 제조: Toshiba. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 2SJ74-BL 2SJ74
브랜드 Toshiba Toshiba
카테고리 Transistors Transistors
수명 주기 상태 활성 수명 종료
재고 상태 In Stock In Stock
단가 (USD) $2.94 $1.25
트랜지스터 유형 P-Channel JFET (depletion mode) —
Drain-Source Breakdown Voltage (VGDS) -25 V —
Drain-Source Current (IDSS), BL grade 6 mA to 12 mA —
Total Power Dissipation (PD) 400 mW [DATA_NEEDED: PD]
Gate-Source Voltage (max) [DATA_NEEDED: Gate-Source Voltage VGSO] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] [DATA_NEEDED: Ciss]
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Input Resistance (Rgss) [DATA_NEEDED: Rgss] —
Transfer Admittance (Yfs) [DATA_NEEDED: Yfs] —
Noise Figure (NF) [DATA_NEEDED: Noise Figure NF] —
패키지 TO-92 (Toshiba 2-5F1A, SC-43), 3-pin TO-92 (lead formed)
실장 유형 Through-Hole Through Hole
Number of Units in IC 1 —
Channel Type P P-Channel
Applications Low noise audio amplifier, first stages of EQ amplifiers and MC head amplifiers —
동작 온도 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
Device Type — P-Channel JFET (junction type)
Drain-Gate Voltage (VGDS) — -25 V
Drain Current (ID) — 20 mA
Primary Application — Low-noise audio amplifier
Recommended Use — First stages of EQ amplifiers and M.C. head amplifiers
Configuration — Single JFET
Technology — Silicon junction JFET
Grading Ranks — GR, BL (by IDSS range)
IDSS Range — [DATA_NEEDED: IDSS range by rank]
Gate-Source Cutoff Voltage (VGS(off)) — [DATA_NEEDED: VGS(off)]
Lead Finish — Pb (per Mouser 2SJ74-BL listing)
Compliance — [DATA_NEEDED: RoHS/REACH status]

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청