2SK170-BL vs 2SK170-GR 비교
다음의 상세 나란히 비교: 2SK170-BL 제조: Toshiba 및 2SK170-GR 제조: Toshiba. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2SK170-BL | 2SK170-GR |
|---|---|---|
| 브랜드 | Toshiba | Toshiba |
| 카테고리 | Transistors | Transistors |
| 수명 주기 상태 | 수명 종료 | 수명 종료 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.10 | $0.50 |
| 트랜지스터 유형 | N-Channel JFET (Junction FET) | N-Channel JFET (depletion mode) |
| Technology | Silicon N-Channel Junction Type | Silicon N-Channel Junction Type |
| Primary Application | Low Noise Audio Amplifier | — |
| Drain Current Rating | 12 mA | — |
| Drain-Source Voltage | 40 V | — |
| Grade / Idss Rank | BL (highest Idss grade of 2SK170 family) | — |
| Gate-Source Voltage Rating | [DATA_NEEDED: gate-source voltage rating] | — |
| Idss Range (BL grade) | [DATA_NEEDED: Idss range for BL grade] | — |
| Noise Figure | [DATA_NEEDED: noise figure] | — |
| Transconductance | [DATA_NEEDED: forward transfer admittance] | — |
| Power Dissipation | [DATA_NEEDED: total power dissipation] | — |
| 패키지 | TO-92, 3-pin | TO-92 (3-pin) |
| 실장 유형 | Through-Hole | Through Hole |
| Polarity | N-Channel | — |
| Configuration | Single JFET | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Grade | — | GR (Idss 2.6 mA to 6.5 mA) |
| Idss (Zero-Gate Drain Current) | — | 2.6 mA to 6.5 mA |
| Application | — | Low noise audio amplifier |
| Drain-Source Voltage (Vdss) | — | [DATA_NEEDED: Drain-Source Voltage] |
| Gate-Drain Voltage (Vgdo) | — | [DATA_NEEDED: Gate-Drain Voltage] |
| Gate Reverse Current | — | [DATA_NEEDED: Gate Reverse Current] |
| Transfer Yfs | — | [DATA_NEEDED: Transfer Yfs] |
| 입력 커패시턴스 | — | [DATA_NEEDED: Input Capacitance] |
| Total Power Dissipation | — | [DATA_NEEDED: Total Power Dissipation] |
| 핀 수 | — | 3 |
| Replacement Series | — | LSK170 (Linear Systems) |