BAT46WJ vs BAT46WJ-Q 비교
다음의 상세 나란히 비교: BAT46WJ 제조: Nexperia 및 BAT46WJ-Q 제조: Nexperia. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BAT46WJ | BAT46WJ-Q |
|---|---|---|
| 브랜드 | Nexperia | Nexperia |
| 카테고리 | Diodes | Diodes |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.02 | $0.06 |
| Diode Type | Single planar Schottky barrier diode with guard ring | — |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | — |
| Average Forward Current (IF(AV)) | 250 mA | 250 mA |
| Maximum Forward Voltage (VF) | 850 mV | — |
| Non-Repetitive Peak Forward Current (IFSM) | 2.5 A | — |
| Maximum Junction Temperature | 150 C | — |
| 패키지 | SOD323F (SC-90), flat lead SMD | SOD323F (SC-90) SMD plastic |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single diode | Single diode |
| Technology | Schottky barrier, planar | — |
| Reverse Recovery | No reverse recovery charge (Schottky) | — |
| Typical Applications | High-speed switching, voltage clamping, line termination, reverse polarity protection | — |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| 전력 손실 (Ptot) | [DATA_NEEDED: total power dissipation] | — |
| RoHS 상태 | Compliant | [DATA_NEEDED: RoHS status] |
| Ordering Suffix | BAT46WJ,115 (tape and reel ordering code) | — |
| Device Type | — | Planar Schottky barrier diode |
| Reverse Voltage (VRRM) | — | 100 V |
| Total Power Dissipation (Ptot) | — | 400 mW |
| Maximum Reverse Current (IR) | — | 4 uA |
| Forward Voltage (VF) | — | [DATA_NEEDED: forward voltage at specified test current] |
| Junction Capacitance (Cj) | — | [DATA_NEEDED: capacitance at specified bias] |
| Guard Ring | — | Integrated, for stress protection |
| Qualification | — | AEC-Q101 qualified |
| Mounting Technology | — | Surface-Mounted Device (SMD) |
| Typical Use | — | Polarity protection, re-circulating, switching diode |