BFU520R vs BFU520W 비교
다음의 상세 나란히 비교: BFU520R 제조: NXP Semiconductors 및 BFU520W 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BFU520R | BFU520W |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Transistors | Transistors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.18 | $0.08 |
| 트랜지스터 유형 | NPN wideband silicon RF BJT | — |
| 컬렉터-이미터 전압 (Vceo) | 12 V | [DATA_NEEDED: VCEO] |
| Collector Current (IC max) | 30 mA | — |
| 전이 주파수 (ft) | 10.5 GHz | [DATA_NEEDED: fT] |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| 패키지 | SOT-143B (4-pin, dual-emitter, plastic) | SOT323 (3-pin plastic) |
| 실장 유형 | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | — |
| Application Class | Small signal to medium power | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | — |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: TJ range] |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | — |
| Gain | [DATA_NEEDED: gain] | — |
| Polarity | — | NPN |
| Technology | — | Silicon wideband RF BJT |
| Application Frequency Range | — | Up to 2 GHz |
| AEC-Q101 | — | Qualified |
| Product Family | — | NXP BFU5 family |
| Primary Use Case | — | High speed, low noise small-signal to medium power RF applications |
| 컬렉터-베이스 전압 (Vcbo) | — | [DATA_NEEDED: VCBO] |
| Continuous Collector Current (IC) | — | [DATA_NEEDED: IC] |
| Total Power Dissipation (Ptot) | — | [DATA_NEEDED: Ptot] |
| Noise Figure (NF) | — | [DATA_NEEDED: NF] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |