BSC019N08NS5ATMA1 vs BSZ0901NSIATMA1 비교

다음의 상세 나란히 비교: BSC019N08NS5ATMA1 제조: Infineon 및 BSZ0901NSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC019N08NS5ATMA1 BSZ0901NSIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.78 $0.34
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 (N-channel trench) OptiMOS trench N-channel MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TA=25C 28 A —
Continuous Drain Current (ID) at TC=25C 237 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 1.9 mOhm —
Gate Threshold Voltage VGS(th) typ 3.0 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 214 W —
동작 온도 범위 -55 C to +150 C -55 C to +150 C (typical MOSFET range)
패키지 PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 —
RoHS 상태 Compliant Compliant
Avalanche Rated Yes —
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
핀 수 — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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