BSC020N03LSGATMA1 vs BSC050N03LSGATMA1 비교
다음의 상세 나란히 비교: BSC020N03LSGATMA1 제조: Infineon 및 BSC050N03LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ 활성사양 비교
| 파라미터 | BSC020N03LSGATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.42 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| 동작 온도 범위 | -55 C to +150 C (junction) | -55 C to +150 C |
| 패키지 / 케이스 | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Part Number | — | BSC050N03LSGATMA1 |
| Technology | — | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 80 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | — | 5 mOhm |
| Power Dissipation (PD) at Tc | — | 50 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 패키지 | — | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Channel Type | — | N-Channel |