BSC027N10NS5ATMA1 vs BSC018N04LSGATMA1 비교
다음의 상세 나란히 비교: BSC027N10NS5ATMA1 제조: Infineon 및 BSC018N04LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC027N10NS5ATMA1 | BSC018N04LSGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | NRND | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.10 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | — |
| Technology | OptiMOS 5 (100V) | MOSFET (Metal Oxide) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at Ta | 23 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 194 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 214 W | — |
| 패키지 | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: Tj min/max] | -55°C to +150°C (TJ) |
| RoHS 상태 | Compliant | Compliant (Pb-free plating) |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | — |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ TC=25°C | — | 100 A |
| Continuous Drain Current (ID) @ TA=25°C | — | 30 A |
| Power Dissipation (PD) @ TC=25°C | — | 125 W |
| Power Dissipation (PD) @ TA=25°C | — | 2.5 W |
| RDS(on) Max @ VGS=10 V | — | 1.8 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 4.5 V, 10 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Tested | — | 100% (per datasheet) |
| JEDEC Qualification | — | Yes (qualified per JEDEC for target applications) |