BSC028N06NSTATMA1 vs IPD50N03S4L06ATMA1 비교

다음의 상세 나란히 비교: BSC028N06NSTATMA1 제조: Infineon 및 IPD50N03S4L06ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ 활성

사양 비교

파라미터 BSC028N06NSTATMA1 IPD50N03S4L06ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.40 $0.49
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Number Base BSC028N06NS —
Technology MOSFET N-Channel (OptiMOS 5) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.5 V to 3.5 V —
Total Gate Charge Qg 37 nC @ VGS=10V —
Input Capacitance Ciss 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] —
Output Capacitance Coss 825 pF —
Reverse Transfer Capacitance Crss 56 pF —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 100 W —
동작 접합 온도 -55C to +175C -55 C to +175 C
패키지 PG-TDSON-8-7 (SuperSO8, 5x6 mm) PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant (Green Package)
할로겐 프리 Yes —
MSL 레벨 1 MSL1 (up to 260 C peak reflow)
AEC-Q101 Automotive Qualified [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D, Tc) — 50 A
On-State Resistance (R_DS(on) max) — 5.5 mOhm at V_GS = 10 V
Gate Threshold Voltage (V_GS(th) typ) — 2.2 V
Total Gate Charge (Q_g) — 31 nC at V_GS = 10 V
Input Capacitance (C_iss) — 2.33 nF
Output Capacitance (C_oss) — 600 pF
Reverse Transfer Capacitance (C_rss) — 34 pF
Power Dissipation (P_D) — 56 W at Tc = 25 C
Automotive Qualification — AEC-Q101
Avalanche Rating — 100% Avalanche Tested

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