BSC040N10NS5ATMA1 vs BSC030N08NS5ATMA1 비교
다음의 상세 나란히 비교: BSC040N10NS5ATMA1 제조: Infineon 및 BSC030N08NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC040N10NS5ATMA1 | BSC030N08NS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.93 | $0.55 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 100 V | — |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Continuous Drain Current (ID) max | 136 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 139 W | — |
| 패키지 | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55C to +150C | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Output Capacitance Reduction | Up to 44% vs previous generation | — |
| RDS(on) Reduction | Up to 43% vs previous generation | — |
| RoHS 상태 | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Product Type | — | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Pulsed Drain Current (ID,pulse) | — | 161 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| RDS(on) max at VGS=10 V | — | 3.0 mOhm |
| RDS(on) max at VGS=7 V | — | [DATA_NEEDED: RDS(on) at VGS=7V] |
| Power Dissipation (Ta=25C, 1.5mm FR4) | — | 2.5 W |
| Power Dissipation (TC=25C) | — | 139 W |
| Operating Temperature Range (TJ) | — | -55C to +150C |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| 할로겐 프리 | — | Yes |
| Lead-Free | — | Yes |
| Gate Drive Logic | — | Standard 10V, compatible with 12V drive |
| Optimized Application | — | Synchronous Rectification |