BSC072N08NS5ATMA1 vs BSC059N04LS6ATMA1 비교
다음의 상세 나란히 비교: BSC072N08NS5ATMA1 제조: Infineon 및 BSC059N04LS6ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC072N08NS5ATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.46 | $0.74 |
| Manufacturer | Infineon Technologies | — |
| Part Family | BSC072N08NS5 (OptiMOS 5) | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Technology | OptiMOS 5 | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc | 74 A | — |
| Drain-Source On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| 패키지 | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: full min/max operating Tj] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | — |
| RoHS 상태 | Compliant | Compliant |
| Shipping Pack | Tape & Reel (ATMA1) | — |
| Standard Pack Quantity | 5000 | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25C | — | 17 A |
| Continuous Drain Current (ID) at TC=25C | — | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | — | 59 A |
| On-Resistance RDS(on) max | — | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | — | 3 W |
| Total Power Dissipation at TC=25C | — | 38 W |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Diode Continuous Forward Current (IS) | — | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | — | 236 A at TC=25C |
| Lead-Free | — | Yes |