BSC098N10NS5ATMA1 vs IPL60R065P7AUMA1 비교
다음의 상세 나란히 비교: BSC098N10NS5ATMA1 제조: Infineon 및 IPL60R065P7AUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC098N10NS5ATMA1 | IPL60R065P7AUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.55 | $2.18 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| 동작 온도 범위 | [DATA_NEEDED: Tj min/max] | -55 °C to +150 °C (T<sub>j</sub>) |
| 패키지 | PG-TDSON-8-7 (SuperSO8 5x6) | PG-VSON-4 (surface mount with exposed pad) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 | 1 (per JEDEC J-STD-020) |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Manufacturer | — | Infineon Technologies |
| Technology Family | — | CoolMOS™ P7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | — | 41 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | — | 65 mΩ (max) |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) | — | 201 W |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 3.5 V |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | — | 2895 pF |
| Rise Time (t<sub>r</sub>) | — | 7 ns |
| Fall Time (t<sub>f</sub>) | — | 4 ns |
| 핀 수 | — | 4 |
| Channel Type | — | N-Channel |
| Polarity | — | Single N-channel |
| Drain to Source Voltage | — | 650 V (rating per AiEMA spec) |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) | — | 0.053 Ω |
| 할로겐 프리 | — | Yes |