BSC265N10LSFGATMA1 vs BSC027N10NS5ATMA1 비교
다음의 상세 나란히 비교: BSC265N10LSFGATMA1 제조: Infineon 및 BSC027N10NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ 활성
사양 비교
| 파라미터 | BSC265N10LSFGATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | NRND |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.72 | $1.10 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | 6.5 A | — |
| Power Dissipation (PD, Tc) | 78 W | — |
| Technology | OptiMOS 2 (TrenchFET) | OptiMOS 5 (100V) |
| 패키지 | PG-TDSON-8-1 (TDSON-8) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| 동작 온도 범위 | -55 C to +150 C (junction) | [DATA_NEEDED: Tj min/max] |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| Series | OptiMOS 2 | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC027N10NS5ATMA1 |
| Channel Type | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | — | 23 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 2.7 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 214 W |
| Qualification | — | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |