BSL316CH6327XTSA1 vs BSS316NH6327XTSA1 비교

다음의 상세 나란히 비교: BSL316CH6327XTSA1 제조: Infineon 및 BSS316NH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSL316CH6327XTSA1 BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon

BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon

BSL316CH6327XTSA1 ✓ 활성

사양 비교

파라미터 BSL316CH6327XTSA1 BSS316NH6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.22 $0.13
Manufacturer Infineon Technologies —
Part Family OptiMOS small-signal complementary MOSFET —
Configuration Complementary pair (1 N-channel + 1 P-channel in one package) —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (N-channel ID) 1.4 A —
Continuous Drain Current (P-channel ID) 1.5 A —
Total Power Dissipation (Ptot) 500 mW —
패키지 PG-TSOP6-6 (TSOP6, 6-pin) PG-SOT23 (SOT-23-3)
실장 유형 Surface Mount Surface Mount
동작 온도 -55C to +150C (junction) —
Technology OptiMOS low-voltage MOSFET OptiMOS 2 (Trench)
Channel Type N-channel + P-channel (dual) —
핀 수 6 —
RoHS 상태 Compliant Compliant
MSL 레벨 [DATA_NEEDED: MSL level] MSL1 (per JEDEC J-STD-020)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
동작 접합 온도 범위 — -55 C to +150 C
Lead Plating — Pb-free (Matte Tin)
Automotive Qualification — AEC-Q101 qualified

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