BSO613SPVGXUMA1 vs BSP135H6906XTSA1 비교
다음의 상세 나란히 비교: BSO613SPVGXUMA1 제조: Infineon 및 BSP135H6906XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSO613SPVGXUMA1 | BSP135H6906XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.98 | $0.78 |
| FET Type | P-Channel | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | 120 mA |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 패키지 | PG-DSO-8-6 (Power-SO-8) | PG-SOT223-4 (SOT-223, 3+tab) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | SIPMOS (planar high-voltage) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | — |
| 동작 온도 범위 | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | -55C to +150C |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | — |
| MSL 레벨 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | 1 (unlimited) |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | — |
| 핀 수 | 8 (6 active, 2 thermal/NC) | 4 (3 leads + drain tab) |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| RDS(on) Max at VGS=0V | — | 45 Ohm |
| Power Dissipation (PD) Max | — | 1.8 W |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(off)) | — | Depletion mode (normally-on) |
| Automotive Qualification | — | AEC-Q101 (per datasheets.com parametric record) |