BSP762TXUMA1 vs BSP89H6327XTSA1 비교

다음의 상세 나란히 비교: BSP762TXUMA1 제조: Infineon 및 BSP89H6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSP762TXUMA1 BSP89H6327XTSA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.74 $0.39
Product Type Smart High-Side Power Switch (N-Channel) —
Switch Configuration 1:1 (Single Channel) —
Load Current (Continuous) 2 A —
Operating Voltage Range [DATA_NEEDED: VBAT operating range] —
On-State Resistance (Rds(on)) [DATA_NEEDED: typical Rds(on) in mOhm] —
Number of Channels 1 —
Input Type Non-Inverting (Logic-Level) —
동작 온도 범위 -40 C to +150 C (junction) -55 °C to +150 °C (Tj)
패키지 PG-DSO-8-6 (8-pin SOIC with thermal pad) PG-SOT223-4 (SOT-223, 4-pin with tab)
실장 유형 Surface Mount Surface Mount
Protection Features Overcurrent, Short-Circuit, Over-Temperature, Overvoltage, Undervoltage Lockout, Load Dump, Reverse Battery —
Integrated Charge Pump Yes —
Diagnostic Output Status / Fault Feedback (open-drain) —
Family MINI-PROFET —
RoHS 상태 Compliant Compliant
MSL 레벨 1 (unlimited floor life) —
트랜지스터 유형 — N-Channel MOSFET, enhancement mode
Technology — SIPMOS (planar power MOS)
Drain-Source Breakdown Voltage (V(BR)DSS) — 240 V (VGS=0, ID=250 µA)
Continuous Drain Current (ID) at Ta=25°C — 0.35 A
Total Power Dissipation (Ptot) at Ta=25°C — 1.8 W (on FR4 PCB, 6 cm² cooling area)
On-State Resistance (RDS(on)) max — 6 Ω (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Thermal Resistance Junction-Ambient (RthJA) — 70 K/W (6 cm² PCB)
Thermal Resistance Junction-Solder Point (RthJS) — 25 K/W
Logic-Level Gate Drive — Yes (logic-level compatible)
dv/dt Rated — Yes
ESD Protection — Internal gate-source Zener
Automotive Qualification — AEC-Q101 (per ordering code H6327)

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