BSP89H6327XTSA1 vs BSP762TXUMA1 비교

다음의 상세 나란히 비교: BSP89H6327XTSA1 제조: Infineon 및 BSP762TXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSP89H6327XTSA1 BSP762TXUMA1
브랜드 Infineon Infineon
카테고리 MOSFETs Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.39 $0.74
트랜지스터 유형 N-Channel MOSFET, enhancement mode —
Technology SIPMOS (planar power MOS) —
Drain-Source Breakdown Voltage (V(BR)DSS) 240 V (VGS=0, ID=250 µA) —
Continuous Drain Current (ID) at Ta=25°C 0.35 A —
Total Power Dissipation (Ptot) at Ta=25°C 1.8 W (on FR4 PCB, 6 cm² cooling area) —
On-State Resistance (RDS(on)) max 6 Ω (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
동작 온도 범위 -55 °C to +150 °C (Tj) -40 C to +150 C (junction)
Thermal Resistance Junction-Ambient (RthJA) 70 K/W (6 cm² PCB) —
Thermal Resistance Junction-Solder Point (RthJS) 25 K/W —
패키지 PG-SOT223-4 (SOT-223, 4-pin with tab) PG-DSO-8-6 (8-pin SOIC with thermal pad)
실장 유형 Surface Mount Surface Mount
Logic-Level Gate Drive Yes (logic-level compatible) —
dv/dt Rated Yes —
ESD Protection Internal gate-source Zener —
Automotive Qualification AEC-Q101 (per ordering code H6327) —
RoHS 상태 Compliant Compliant
Product Type — Smart High-Side Power Switch (N-Channel)
Switch Configuration — 1:1 (Single Channel)
Load Current (Continuous) — 2 A
Operating Voltage Range — [DATA_NEEDED: VBAT operating range]
On-State Resistance (Rds(on)) — [DATA_NEEDED: typical Rds(on) in mOhm]
Number of Channels — 1
Input Type — Non-Inverting (Logic-Level)
Protection Features — Overcurrent, Short-Circuit, Over-Temperature, Overvoltage, Undervoltage Lockout, Load Dump, Reverse Battery
Integrated Charge Pump — Yes
Diagnostic Output — Status / Fault Feedback (open-drain)
Family — MINI-PROFET
MSL 레벨 — 1 (unlimited floor life)

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