BSS138LT1G vs FDV301N 비교
다음의 상세 나란히 비교: BSS138LT1G 제조: onsemi 및 FDV301N 제조: onsemi. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS138LT1G | FDV301N |
|---|---|---|
| 브랜드 | onsemi | onsemi |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.08 | $0.08 |
| 트랜지스터 유형 | N-Channel MOSFET | N-Channel Enhancement Mode MOSFET (Digital FET) |
| Drain-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 200 mA (Ta) | — |
| Power Dissipation (PD) | 225 mW (Ta) | — |
| On-Resistance Max (RDS(on)) | 3.5 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate-Source Voltage Max (VGS) | [DATA_NEEDED: maximum gate-source voltage] | — |
| Configuration | Single FET | — |
| Channel Mode | Enhancement Mode | — |
| 패키지 | SOT-23-3 (TO-236) | SOT-23-3 |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS 상태 | Compliant (RoHS Compliant and Pb-free per Easybom) | [DATA_NEEDED: RoHS compliance status] |
| Product Family | BSS138LT Series Small Signal MOSFET | — |
| Typical Applications | Computers, printers, cordless phones, DC-DC converters | — |
| Drain-Source Voltage (Vdss) | — | 25 V |
| Continuous Drain Current (Id) | — | 220 mA (Ta) |
| Peak Drain Current | — | 0.5 A |
| RDS(on) at VGS = 2.7 V | — | 5 ohm (typical) |
| RDS(on) typical | — | 4 ohm |
| Power Dissipation (Pd) | — | 350 mW (Ta) |
| Technology | — | High cell density DMOS |
| Gate Drive Type | — | Logic level (no bias resistors required) |
| Gate-Source Voltage (Vgs) Max | — | [DATA_NEEDED: maximum gate-source voltage] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Thermal Resistance (RthJA) | — | [DATA_NEEDED: thermal resistance junction to ambient] |
| MSL 레벨 | — | [DATA_NEEDED: moisture sensitivity level] |