BSS138NH6327XTSA2 vs BSS214NH6327XTSA1 비교
다음의 상세 나란히 비교: BSS138NH6327XTSA2 제조: Infineon 및 BSS214NH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS138NH6327XTSA2 | BSS214NH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.15 | $0.09 |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 60 V | — |
| R_DS(on) max @ V_GS=10V | 3.5 ohm | — |
| Continuous Drain Current (Ta) | 230 mA | — |
| Power Dissipation (Ta) | 360 mW | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: typical V_GS(th) value] | — |
| 패키지 | PG-SOT-23 (3-pin) | SOT-23 (PG-SOT23), 3 pins |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: Tj max and operating range] | -55C to +150C (junction) |
| Gate-Source Voltage V_GS max | ±20 V | — |
| dv/dt Rated | Yes | — |
| 할로겐 프리 | Yes (per IEC 61249-2-21) | — |
| RoHS Compliance | Compliant | — |
| AEC-Q101 Qualification | Qualified | — |
| Lead Plating | Pb-free | — |
| Marking Code | [DATA_NEEDED: top-side marking code] | — |
| Packaging | Tape and Reel | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1.5 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | — | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | — | ±12 V (recommended) |
| Technology | — | OptiMOS 2 (planar N-channel) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead Finish | — | Pb-free lead plating (matte tin) |
| RoHS 상태 | — | Compliant |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| ESD Protection | — | Yes (gate ESD diode) |