BSS169H6327XTSA1 vs BSS205NH6327XTSA1 비교
다음의 상세 나란히 비교: BSS169H6327XTSA1 제조: Infineon 및 BSS205NH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS169H6327XTSA1 | BSS205NH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.15 | $0.12 |
| FET Type | N-Channel Depletion Mode | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 170 mA (Ta) | — |
| Power Dissipation (PD) | 360 mW (Ta) | — |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | — |
| 동작 온도 범위 | [DATA_NEEDED: junction/ambient operating temperature range] | -55 °C to +150 °C (junction) |
| 패키지 | PG-SOT23 (SOT-23-3) | PG-SOT23 (SC-59, TO-236-3), 3-pin |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| Technology | Depletion-mode vertical DMOS | — |
| Drain Current at 25C | 170 mA continuous | — |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS205NH6327XTSA1 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage V<sub>DS</sub> | — | 20 V |
| Continuous Drain Current I<sub>D</sub> (Ta) | — | 2.5 A |
| Power Dissipation P<sub>D</sub> (Ta) | — | 500 mW |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | — | 85 mΩ |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Drive Voltage | — | Logic-level compatible |
| Qualification | — | AEC-Q101 |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Packaging | — | Tape & Reel (H6327) |