BSS316NH6327XTSA1 vs BSS816NWH6327XTSA1 비교

다음의 상세 나란히 비교: BSS316NH6327XTSA1 제조: Infineon 및 BSS816NWH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon

BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon

BSS816NWH6327XTSA1 ✓ 활성

사양 비교

파라미터 BSS316NH6327XTSA1 BSS816NWH6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.13 $0.14
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS 2 (Trench) OptiMOS 2 trench MOSFET
Drain-Source Voltage (VDS) 30 V 20 V
Continuous Drain Current (ID) at TA=25C 1.4 A 1.4 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A —
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA —
Total Gate Charge (Qg) 600 pC at VGS=5 V —
Input Capacitance (Ciss) 94 pF at VDS=15 V —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] —
Maximum Power Dissipation (PD) at TA=25C 500 mW —
동작 접합 온도 범위 -55 C to +150 C —
패키지 PG-SOT23 (SOT-23-3) SOT-323 (PG-SOT323), 3-pin
실장 유형 Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) —
MSL 레벨 MSL1 (per JEDEC J-STD-020) 1
RoHS 상태 Compliant —
Automotive Qualification AEC-Q101 qualified —
Manufacturer — Infineon Technologies
Part Family — BSS816NW (OptiMOS 2 Small-Signal)
트랜지스터 유형 — MOSFET, N-Channel
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
RDS(on) max @ VGS=4.5V — 160 mOhm
RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Power Dissipation (PD) at TA=25C — 500 mW
동작 온도 범위 — -55C to +150C
Qualification — AEC-Q101 (Automotive)
ESD Protection — Yes (integrated, per Infineon datasheet)
RoHS / Lead-Free — RoHS compliant, lead-free

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