BSZ018NE2LSATMA1 vs BSC027N06LS5ATMA1 비교
다음의 상세 나란히 비교: BSZ018NE2LSATMA1 제조: Infineon 및 BSC027N06LS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSZ018NE2LSATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.31 | $0.66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| 동작 온도 범위 | -55C to +150C | -55°C to +150°C |
| 패키지 | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 할로겐 프리 | Yes | — |
| Series | — | OptiMOS™ 5 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Tc=100°C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 2.7 mOhm |
| On-Resistance (RDS(on)) @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Tc=25°C | — | 83 W |
| 패키지 / 케이스 | — | PG-TDSON-8-7 (SuperSO8 5x6) |
| 핀 수 | — | 8 |
| Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Avalanche Energy Rated | — | Yes |
| MSL (Moisture Sensitivity Level) | — | MSL1 |