BSZ024N04LS6ATMA1 vs IAUC60N04S6N044ATMA1 비교

다음의 상세 나란히 비교: BSZ024N04LS6ATMA1 제조: Infineon 및 IAUC60N04S6N044ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSZ024N04LS6ATMA1 BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 ✓ 활성

사양 비교

파라미터 BSZ024N04LS6ATMA1 IAUC60N04S6N044ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.46 $0.98
트랜지스터 유형 N-Channel MOSFET —
Technology OptiMOS 6 (shielded-gate trench) OptiMOS-6 N-channel trench MOSFET
Drain-Source Voltage (V_DS) 40 V 40 V
Continuous Drain Current (I_D, Ta) 24 A —
Continuous Drain Current (I_D, Tc) 40 A —
Pulsed Drain Current (I_DM) 130 A [DATA_NEEDED: pulsed drain current]
R_DS(on) Max @ V_GS=10V 2.4 mΩ —
R_DS(on) Max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at 4.5V] —
Gate Threshold Voltage (V_GS(th)) 2.3 V (typical) —
Total Gate Charge (Q_g) @ V_GS=10V 25 nC —
Input Capacitance (C_iss) 1.8 nF —
Output Capacitance (C_oss) 19 pF —
Power Dissipation (P_D, Ta) 2.5 W —
Power Dissipation (P_D, Tc) 75 W —
동작 접합 온도 -55°C to +175°C -55°C to +175°C
패키지 PG-TSDSON-8-FL (3.3 mm x 3.3 mm) PG-TDSON-8 (5x6 mm) with exposed pad
실장 유형 Surface Mount, top-side drain pad Surface Mount
RoHS 상태 Compliant Compliant
MSL 레벨 1 (per JEDEC J-STD-020) 1 (unlimited)
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
Automotive Qualification — AEC-Q101 qualified (IAUC prefix)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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