BSZ0501NSIATMA1 vs BSC028N06NSTATMA1 비교

다음의 상세 나란히 비교: BSZ0501NSIATMA1 제조: Infineon 및 BSC028N06NSTATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSZ0501NSIATMA1 BSC028N06NSTATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.29 $0.40
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0501NSIATMA1 —
Product Family OptiMOS 5 (25V/30V) —
FET Type N-Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) at TA=25C 25 A —
Continuous Drain Current (Id) at TC=25C 40 A —
Power Dissipation (Pd) at TA=25C 2.1 W —
Power Dissipation (Pd) at TC=25C 50 W —
Operating Mode Enhancement Mode —
Configuration Single with built-in diode —
패키지 PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
실장 유형 Surface Mount Surface Mount
Number of Terminals 8 —
JESD-609 Code e3 (matte tin) —
MSL 레벨 [DATA_NEEDED: MSL rating] 1
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
동작 온도 범위 [DATA_NEEDED: Tj max] —
RoHS 상태 Compliant Compliant
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Technology — MOSFET N-Channel (OptiMOS 5)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
동작 접합 온도 — -55C to +175C
할로겐 프리 — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청