BTS3110NHUMA1 vs BSP315PH6327XTSA1 비교

다음의 상세 나란히 비교: BTS3110NHUMA1 제조: Infineon 및 BSP315PH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ 활성

사양 비교

파라미터 BTS3110NHUMA1 BSP315PH6327XTSA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.82 $0.31
Product Type Smart Low-Side Power Switch —
Family Classic HITFET —
Number of Channels 1 —
Switch Type N-Channel (1:1) —
Maximum Drain-to-Source Voltage (VDS max) 42 V —
Continuous Drain Current 1.4 A —
On-Resistance (RDS(on) typ) 200 mOhm —
Input Logic Compatibility TTL / CMOS (3.3 V and 5 V) —
On-State Input Voltage (VIH) [DATA_NEEDED: VIH value] —
Off-State Input Voltage (VIL) [DATA_NEEDED: VIL value] —
Status Flag Output Open-drain diagnostic output —
Protection Features ESD, thermal shutdown, over-load current limit —
동작 온도 범위 -40 C to +150 C -55 C to +150 C (junction)
패키지 PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223-3 pinout with exposed tab)
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
RoHS 상태 Compliant —
Automotive Qualified Yes - 12 V automotive applications —
FET Type — P-Channel
Technology — OptiMOS (enhancement mode)
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -1.17 A (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Gate-Source Voltage (VGS) — ±20 V (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy Rated — Yes (per datasheet)
Lead-Free / RoHS — Yes / Compliant

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