BTS3110NHUMA1 vs BTS724GXUMA1 비교
다음의 상세 나란히 비교: BTS3110NHUMA1 제조: Infineon 및 BTS724GXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BTS3110NHUMA1 | BTS724GXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.82 | $3.21 |
| Product Type | Smart Low-Side Power Switch | — |
| Family | Classic HITFET | Classic PROFET 24V automotive smart high-side switch |
| Number of Channels | 1 | — |
| Switch Type | N-Channel (1:1) | — |
| Maximum Drain-to-Source Voltage (VDS max) | 42 V | — |
| Continuous Drain Current | 1.4 A | — |
| On-Resistance (RDS(on) typ) | 200 mOhm | — |
| Input Logic Compatibility | TTL / CMOS (3.3 V and 5 V) | — |
| On-State Input Voltage (VIH) | [DATA_NEEDED: VIH value] | — |
| Off-State Input Voltage (VIL) | [DATA_NEEDED: VIL value] | — |
| Status Flag Output | Open-drain diagnostic output | — |
| Protection Features | ESD, thermal shutdown, over-load current limit | Overload, short-circuit, over-temperature, over-voltage |
| 동작 온도 범위 | -40 C to +150 C | -40 C to +150 C junction |
| 패키지 | PG-SOT223-4 (SOT-223-4) | PG-DSO-20 (20-pin, exposed thermal considerations) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | [DATA_NEEDED: MSL level] | 3 |
| RoHS 상태 | Compliant | Compliant |
| Automotive Qualified | Yes - 12 V automotive applications | — |
| 토폴로지 | — | 4-channel high-side switch |
| 출력 수 | — | 4 |
| 출력 구성 | — | High-side |
| On-Resistance (RDS(on)) per Channel | — | 200 mOhm typical at 25 C |
| Continuous Load Current per Channel | — | 3 A |
| Supply Voltage (Vbb) | — | 5.5 V to 38 V |
| Operating Supply Voltage Range | — | 5.5 V to 38 V |
| Overvoltage Clamp (Vbb(AZ)) | — | Data needed - see datasheet |
| Standby Current | — | 8 mA typical (per datasheet family) |
| Input Type | — | CMOS-compatible, ground-referenced |
| Diagnostic Output | — | Yes - per-channel status flag |
| Demagnetization | — | Fast demagnetization for inductive loads |
| Technology | — | Infineon Smart SIPMOS (vertical power MOSFET + charge pump) |